Abstract: [Problem] To improve the drain current ON/OFF ratio characteristics. [Solution] A tunnel field-effect transistor 10 of the present invention is such that, when the gate length is denoted by LG and the extension distance of a source region 1 extended toward a drain region 3 from a position in the source region 1 is denoted by LOV, LTG expressed in Formula (1) below as the shortest distance between the position of an extension end of the source region 1 based on a drain-side reference position as the side face position of a gate electrode 6a, 6b closest to the drain region 3, and the position in the semiconductor layer 4 opposite to the drain-side reference position in the height direction of the gate electrode 6a, 6b satisfies a condition of Inequality (2) below. Note that lt_OFF in Inequality (2) denotes a shortest tunnel distance over which carriers move from the source region to a channel region through a tunnel junction surface in an OFF state of the tunnel field-effect transistor.

Abstract: [Problem] To improve the drain current ON/OFF ratio characteristics. [Solution] A tunnel field-effect transistor 10 of the present invention is such that, when the gate length is denoted by LG and the extension distance of a source region 1 extended toward a drain region 3 from a position in the source region 1 is denoted by LOV, LTG expressed in Formula (1) below as the shortest distance between the position of an extension end of the source region 1 based on a drain-side reference position as the side face position of a gate electrode 6a, 6b closest to the drain region 3, and the position in the semiconductor layer 4 opposite to the drain-side reference position in the height direction of the gate electrode 6a, 6b satisfies a condition of Inequality (2) below. Note that lt_OFF in Inequality (2) denotes a shortest tunnel distance over which carriers move from the source region to a channel region through a tunnel junction surface in an OFF state of the tunnel field-effect transistor.

Abstract: Disclosed hereby is a technique to compensate for variations of the logical thresholds of the plurality of input initial stage circuits of a semiconductor integrated circuit due to the parasitic resistances of wiring layers (the power supply wiring layer and the ground wiring layer) for the supply of a fixed potential.The dimensions of the transistors constituting the input initial stage circuits, for instance the channel widths of the N-channel MOSFET's of CMOS inverters, are enlarged to compensate for an increase in the logical thresholds due to the parasitic resistances of the ground wiring layer. The unevenness of logical thresholds of the plurality of input initial stage circuits due to their respective positions in the semiconductor chip can be thereby reduced.

Abstract: A semiconductor memory apparatus comprises a plurality of complementary bit line pairs for accessing memory cells. Each of the memory cells is accessed by two complementary bit line pairs. Each of the complementary bit line pairs is connected to a corresponding sense amp circuit for amplifying a signal level difference between bit lines of a corresponding bit line pair. A plurality of sealed lines, each being connected to ground and being positioned between two adjacent bit lines of different complementary bit line pairs, are provided to avoid the formation of a line-to-line capacitance between the two adjacent bit lines.

Abstract: A cache memory system having an improved area addressing scheme for rewriting is disclosed. The cache memory system comprises a cache memory having a plurality of memory areas, a first detection circuit for designating the least recently accessed area by a CPU, a second detection circuit for detecting that the least recently accessed memory area is not designated and a control circuit for forcibly selecting a predetermined one memory area for rewriting when the least recently accessed memory area is not designated.