Patents by Inventor Hidehiro Kojiri
Hidehiro Kojiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11145504Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.Type: GrantFiled: October 9, 2019Date of Patent: October 12, 2021Assignee: Applied Materials, Inc.Inventors: Zhijun Jiang, Ganesh Balasubramanian, Arkajit Roy Barman, Hidehiro Kojiri, Xinhai Han, Deenesh Padhi, Chuan Ying Wang, Yue Chen, Daemian Raj Benjamin Raj, Nikhil Sudhindrarao Jorapur, Vu Ngoc Tran Nguyen, Miguel S. Fung, Jose Angelo Olave, Thian Choi Lim
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Patent number: 10755903Abstract: A method of cleaning a remote plasma source includes supplying a first cycle of one or more first cleaning gases to a remote plasma source. The method includes supplying a second cycle of one or more second cleaning gases to the remote plasma source. The method includes supplying one or more cooling fluids to one or more cooling conduits coupled with the remote plasma source.Type: GrantFiled: January 4, 2017Date of Patent: August 25, 2020Assignee: Applied Materials, Inc.Inventors: Sidharth Bhatia, Zhili Zuo, Hidehiro Kojiri, Anjana M. Patel, Song-Moon Suh, Ganesh Balasubramanian
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Publication number: 20200227258Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.Type: ApplicationFiled: October 9, 2019Publication date: July 16, 2020Inventors: Zhijun JIANG, Ganesh BALASUBRAMANIAN, Arkajit ROY BARMAN, Hidehiro KOJIRI, Xinhai HAN, Deenesh PADHI, Chuan Ying WANG, Yue CHEN, Daemian Raj BENJAMIN RAJ, Nikhil Sudhindrarao JORAPUR, Vu Ngoc Tran NGUYEN, Miguel S. FUNG, Jose Angelo OLAVE, Thian Choi LIM
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Publication number: 20170207069Abstract: A method of cleaning a remote plasma source includes supplying a first cycle of one or more first cleaning gases to a remote plasma source. The method includes supplying a second cycle of one or more second cleaning gases to the remote plasma source. The method includes supplying one or more cooling fluids to one or more cooling conduits coupled with the remote plasma source.Type: ApplicationFiled: January 4, 2017Publication date: July 20, 2017Inventors: Sidharth BHATIA, Zhili ZUO, Hidehiro KOJIRI, Anjana M. PATEL, Song-Moon SUH, Ganesh BALASUBRAMANIAN
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Patent number: 9431477Abstract: A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.Type: GrantFiled: August 5, 2013Date of Patent: August 30, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Olga Kryliouk, Yuriy Melnik, Hidehiro Kojiri, Tetsuya Ishikawa
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Patent number: 8980002Abstract: Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.Type: GrantFiled: May 10, 2012Date of Patent: March 17, 2015Assignee: Applied Materials, Inc.Inventors: Yuriy Melnik, Lu Chen, Hidehiro Kojiri
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Patent number: 8853086Abstract: Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AlCl3, AlCl) and an etchant containing gas that includes a halogen gas (e.g., Cl2) or hydrogen halide gas (e.g., HCl).Type: GrantFiled: May 10, 2012Date of Patent: October 7, 2014Assignee: Applied Materials, Inc.Inventors: Yuriy Melnik, Lu Chen, Hidehiro Kojiri
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Patent number: 8778783Abstract: Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).Type: GrantFiled: May 10, 2012Date of Patent: July 15, 2014Assignee: Applied Materials, Inc.Inventors: Yuriy Melnik, Lu Chen, Hidehiro Kojiri
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Publication number: 20130320353Abstract: A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.Type: ApplicationFiled: August 5, 2013Publication date: December 5, 2013Applicant: Applied Materials, Inc.Inventors: Olga Kryiouk, Yuriy Mehnik, Hidehiro Kojiri, Tetsuya Ishikawa
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Patent number: 8507304Abstract: A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.Type: GrantFiled: July 15, 2010Date of Patent: August 13, 2013Assignee: Applied Materials, Inc.Inventors: Olga Kryliouk, Yuriy Melnik, Hidehiro Kojiri, Tetsuya Ishikawa
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Publication number: 20120291698Abstract: Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.Type: ApplicationFiled: May 10, 2012Publication date: November 22, 2012Inventors: Yuriy Melnik, Lu Chen, Hidehiro Kojiri
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Publication number: 20120295418Abstract: Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).Type: ApplicationFiled: May 10, 2012Publication date: November 22, 2012Inventors: Yuriy Melnik, Lu Chen, Hidehiro Kojiri
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Publication number: 20120295428Abstract: Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AlCl3, AlCl) and an etchant containing gas that includes a halogen gas (e.g., Cl2) or hydrogen halide gas (e.g., HCl).Type: ApplicationFiled: May 10, 2012Publication date: November 22, 2012Inventors: Yuriy Melnik, Lu Chen, Hidehiro Kojiri
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Publication number: 20120235116Abstract: One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination.Type: ApplicationFiled: July 30, 2010Publication date: September 20, 2012Inventors: Jie Su, Olga Kryliouk, Yuriy Melnik, Hidehiro Kojiri, Lu Chen, Tetsuya Ishikawa
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Publication number: 20120156863Abstract: Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pretreating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.Type: ApplicationFiled: February 28, 2012Publication date: June 21, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Yuriy MELNIK, Olga KRYLIOUK, Hidehiro KOJIRI, Tetsuya ISHIKAWA
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Patent number: 8138069Abstract: Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.Type: GrantFiled: April 23, 2010Date of Patent: March 20, 2012Assignee: Applied Materials, Inc.Inventors: Yuriy Melnik, Olga Kryliouk, Hidehiro Kojiri, Tetsuya Ishikawa
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Publication number: 20110263111Abstract: Group III-nitride N-type doping techniques are described.Type: ApplicationFiled: March 24, 2011Publication date: October 27, 2011Inventors: Yuriy Melnik, Olga Kryliouk, Lu Chen, Hidehiro Kojiri, Tetsuya Ishikawa
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Publication number: 20110140071Abstract: Nano-spherical group III-nitride materials and methods of forming nano-spherical group III-nitride materials are described. Also described is a 1-dimensional LED or similar device formed from a single nano-rod of a nano-spherical group III-nitride material.Type: ApplicationFiled: December 14, 2010Publication date: June 16, 2011Inventors: Olga Kryliouk, Yuriy Melnik, Hidehiro Kojiri, Tetsuya Ishikawa
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Publication number: 20110012109Abstract: A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.Type: ApplicationFiled: July 15, 2010Publication date: January 20, 2011Applicant: Applied Materials, Inc.Inventors: Olga Kryliouk, Yuriy Melnik, Hidehiro Kojiri, Tetsuya Ishikawa
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Publication number: 20100279020Abstract: A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.Type: ApplicationFiled: April 29, 2010Publication date: November 4, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Yuriy Melnik, Hidehiro Kojiri, Olga Kryliouk, Tetsuya Ishikawa