Abstract: Provided herein are a diagnostic device for improving trichotillomania and a diagnostic method of improving trichotillomania capable of quantifying: and visualizing a possibility of improvement in trichotillomania. A diagnostic device for improving trichotillomania 20 includes a customer information storage unit 25A to store customer information, a diagnostic information storage unit 25B storing an impulse factor of pulling out hair and an improvement factor as diagnostic information, a master improvement factor storage unit 25C preliminarily making the improvement factor correspond to a point and store the improvement factor with the point, a diagnostic score calculation unit 22 calculating a quantified possibility of improvement of trichotillomania, and a diagnostic result issuing unit 23 to issue a diagnostic result including the diagnostic score.

Abstract: The semiconductor device includes: a plurality of interlayer insulation films, each interlayer insulation film covering a front surface of a corresponding one of the gate electrodes and protruding from the front surface of the semiconductor substrate; the first metal film covering the front surface of the semiconductor substrate and plurality of the interlayer insulation films; and the protective insulation film covering a part of the first metal film. In a cross-section traversing the plurality of trenches, the end of the protective insulation film is above one of the interlayer insulation films, and a width of the one of the interlayer insulation films that is below the end of the protective insulation film is wider than widths of other interlayer insulation films.

Abstract: The semiconductor device includes: a plurality of interlayer insulation films, each interlayer insulation film covering a front surface of a corresponding one of the gate electrodes and protruding from the front surface of the semiconductor substrate; the first metal film covering the front surface of the semiconductor substrate and plurality of the interlayer insulation films; and the protective insulation film covering a part of the first metal film. In a cross-section traversing the plurality of trenches, the end of the protective insulation film is above one of the interlayer insulation films, and a width of the one of the interlayer insulation films that is below the end of the protective insulation film is wider than widths of other interlayer insulation films.

Abstract: A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 ?m or more over the top surface of the insulating region.

Abstract: A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 ?m or more over the top surface of the insulating region.

Abstract: The present invention provides an organic semiconductor device comprising an organic semiconductor layer having good charge carrier transport property, wherein a carrier injection to the organic semiconductor layer is easy. The above problem is solved by an organic semiconductor device comprising a first electrode and a second electrode facing to each other, and an organic semiconductor layer provided in between the first electrode and the second electrode, wherein a charge carrier injection promoting layer is formed in between the organic semiconductor layer and at least one electrode of the first electrode and the second electrode.

Abstract: The present invention provides an organic semiconductor device comprising an organic semiconductor layer having good charge carrier transport property, wherein a carrier injection to the organic semiconductor layer is easy. The above problem is solved by an organic semiconductor device comprising a first electrode and a second electrode facing to each other, and an organic semiconductor layer provided in between the first electrode and the second electrode, wherein a charge carrier injection promoting layer is formed in between the organic semiconductor layer and at least one electrode of the first electrode and the second electrode.