Patents by Inventor Hidehiro Urata

Hidehiro Urata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9410252
    Abstract: A method for injecting a corrosion inhibitor injecting an oxidant and an anticorrosive agent-pH adjusting agent complex including an anticorrosive agent and a pH adjusting agent adsorbed on a surface of the anticorrosive agent into high temperature water in contact with a surface of a metal structural material and irradiating the high temperature water with a radioactive ray or an ultraviolet ray, wherein the anticorrosive agent of the anticorrosive agent-pH adjusting agent complex has, on the surface of the anticorrosive agent, an active site where the pH adjusting agent reacts with the oxidant, and the pH adjusting agent present on the surface of the anticorrosive agent of the anticorrosive agent-pH adjusting agent complex and/or in the high temperature water is oxidized with the oxidant by the irradiation with the radioactive ray or the ultraviolet ray to change pH adjusting ability of the pH adjusting agent and shift a pH of the high temperature water to a neutral side, and thereby deposition of the antic
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: August 9, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masato Okamura, Tetsuo Oosato, Kazuo Murakami, Seiji Yamamoto, Hiroyuki Arai, Hidehiro Urata, Hajime Hirasawa, Osamu Shibasaki, Koji Negishi
  • Publication number: 20140242299
    Abstract: A method for injecting a corrosion inhibitor injecting an oxidant and an anticorrosive agent-pH adjusting agent complex including an anticorrosive agent and a pH adjusting agent adsorbed on a surface of the anticorrosive agent into high temperature water in contact with a surface of a metal structural material and irradiating the high temperature water with a radioactive ray or an ultraviolet ray, wherein the anticorrosive agent of the anticorrosive agent-pH adjusting agent complex has, on the surface of the anticorrosive agent, an active site where the pH adjusting agent reacts with the oxidant, and the pH adjusting agent present on the surface of the anticorrosive agent of the anticorrosive agent-pH adjusting agent complex and/or in the high temperature water is oxidized with the oxidant by the irradiation with the radioactive ray or the ultraviolet ray to change pH adjusting ability of the pH adjusting agent and shift a pH of the high temperature water to a neutral side, and thereby deposition of the antic
    Type: Application
    Filed: September 13, 2012
    Publication date: August 28, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masato Okamura, Tetsuo Oosato, Kazuo Murakami, Seiji Yamamoto, Hiroyuki Arai, Hidehiro Urata, Hajime Hirasawa, Osamu Shibasaki, Koji Negishi
  • Patent number: 8731132
    Abstract: In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: May 20, 2014
    Assignees: Kabushiki Kaisha Toshiba, The Tokyo Electric Power Company, Incorporated
    Inventors: Masato Okamura, Tetsuo Oosato, Seiji Yamamoto, Tadasu Yotsuyanagi, Nagayoshi Ichikawa, Kenji Yamazaki, Junichi Takagi, Hidehiro Urata, Shunichi Suzuki, Kenro Takamori, Junichi Suzuki
  • Patent number: 8681925
    Abstract: In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: March 25, 2014
    Assignees: Kabushiki Kaisha Toshiba, The Tokyo Electric Power Company, Incorporated
    Inventors: Masato Okamura, Tetsuo Oosato, Seiji Yamamoto, Tadasu Yotsuyanagi, Nagayoshi Ichikawa, Kenji Yamazaki, Junichi Takagi, Hidehiro Urata, Shunichi Suzuki, Kenro Takamori, Junichi Suzuki
  • Patent number: 8320514
    Abstract: In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: November 27, 2012
    Assignees: Kabushiki Kaisha Toshiba, The Tokyo Electric Power Company, Incorporated
    Inventors: Masato Okamura, Tetsuo Oosato, Seiji Yamamoto, Tadasu Yotsuyanagi, Nagayoshi Ichikawa, Kenji Yamazaki, Junichi Takagi, Hidehiro Urata, Shunichi Suzuki, Kenro Takamori, Junichi Suzuki
  • Publication number: 20120128886
    Abstract: In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
    Type: Application
    Filed: January 31, 2012
    Publication date: May 24, 2012
    Applicants: THE TOKYO ELECTRIC POWER COMPANY, INCORPORATED, Kabushiki Kaisha Toshiba
    Inventors: Masato Okamura, Tetsuo Oosato, Seiji Yamamoto, Tadasu Yotsuyanagi, Nagayoshi Ichikawa, Kenji Yamazaki, Junichi Takagi, Hidehiro Urata, Shunichi Suzuki, Kenro Takamori, Junichi Suzuki
  • Publication number: 20120128111
    Abstract: In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
    Type: Application
    Filed: January 31, 2012
    Publication date: May 24, 2012
    Applicants: THE TOKYO ELECTRIC POWER COMPANY, INCORPORATED, Kabushiki Kaisha Toshiba
    Inventors: Masato OKAMURA, Tetsuo OOSATO, Seiji YAMAMOTO, Tadasu YOTSUYANAGI, Nagayoshi ICHIKAWA, Kenji YAMAZAKI, Junichi TAKAGI, Hidehiro URATA, Shunichi SUZUKI, Kenro TAKAMORI, Junichi SUZUKI
  • Publication number: 20060146975
    Abstract: In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.
    Type: Application
    Filed: December 8, 2005
    Publication date: July 6, 2006
    Applicants: Kabushiki Kaisha Toshiba, THE TOKYO ELECTRIC POWER COMPANY, INCORPORATED
    Inventors: Masato Okamura, Tetsuo Oosato, Seiji Yamamoto, Tadasu Yotsuyanagi, Nagayoshi Ichikawa, Kenji Yamazaki, Junichi Takagi, Hidehiro Urata, Shunichi Suzuki, Kenro Takamori, Junichi Suzuki