Abstract: An ink jet head having ink chambers, energy-generating elements provided in the ink chambers, respectively, and ink outlet ports communicating with the ink chambers, respectively. The ink jet head may be left unused for a time longer than a predetermined time, with a meniscus formed in each ink outlet port. In this case, a drive pulse is applied to each energy-generating element several times, thereby forcing the ink outwards from the ink outlet port and increasing a surface area of the ink from a surface area of the meniscus. Then, a negative pressure is applied in each ink chamber, thereby drawing the ink back toward the ink chamber, thus forming a meniscus again in the ink outlet port. In this condition, a drive pulse is applied to the energy-generating element, thus ejecting an ink droplet from the ink outlet port to record data.

Abstract: An image printing apparatus comprises a storage section and a control section. The storage section stores an absorbing speed information in a storage area, the absorption speed information is a measured speed at which a recording medium used for a printing process absorbs an ink used for the printing process. And the control section controls an ink head so as to perform first dot recording which records a plurality of dots on the recording medium by a pitch of an ink ejection opening of the ink head, and moves the recording medium relatively with the ink head and controls the ink head so as to perform second dot recording which records a plurality of dots between a plurality of dots recorded by first dot recording, in accordance with a print interval time determined based on the absorption speed information stored in the storage section.

Abstract: In accordance with the dither matrix position signal from the dither matrix position signal generating unit, the dither matrix circuits supply respectively corresponding threshold signals to the selector. When the pixel of interest of the input image signal corresponds to two ink outlet ports at each end portion of the head units to be corrected, the selector selects the threshold signal from the end portion dither matrix circuit that is set for the end area, in accordance with the dither matrix selection signal from the dither matrix selection signal generating unit. Therefore, the comparator compares the input image signal with the threshold signal from the end portion dither matrix circuit and converts it into an N-valued signal.

Abstract: A to-be-cleaned substrate is cleaned by use of an acid liquid agent in a cleaning cup, the remaining acid liquid agent is washed out by use of pure water, then an alkaline liquid agent is emitted to the surface of the to-be-cleaned substrate in the same cleaning cup to remove the acid liquid agent remaining on the to-be-cleaned substrate. A neutralization reaction between the acid and alkali is caused by emitting the alkaline liquid agent to the surface of the to-be-cleaned substrate so as to efficiently remove the acid liquid agent remaining on the surface of the to-be-cleaned substrate.

Abstract: An absolute temperature measuring pulse sequence is executed and, subsequently, a relative temperature measuring pulse sequence is repeatedly executed. Since while a relative temperature can be measured from phase information, an absolute temperature requires frequency information, a time required in the relative temperature measuring pulse can be made shorter than that required in the absolute temperature measuring pulse sequence. Since the relative temperature reveals a temperature variation, if an absolute temperature at a given time is known, an absolute temperature at a subsequent time can be calculated from the relative temperature. Thus, a local internal temperature of the subject can be measured, with a shorter temporal resolution, with the use of the absolute temperature and relative temperature.

Abstract: A magnetic resonance apparatus wherein an excitation pulse and refocusing pulse are applied to the spins of 1.sub.H and a return pulse is applied at an echo time. A plurality of inversion pulses having different frequency bands from each other are applied, at an interval between the excitation pulse to the spins of 1.sub.H and the return pulse, to the spins of 13.sub.C spin-spin coupled to 1.sub.H. By doing so, a polarization transfer occurs from the spins of the 1.sub.H to the spines of the 13.sub.C. And an excitation pulse is applied to the spins of the 13.sub.C simultaneously with or after the return pulse to the spins of the 1.sub.H. By doing so, magnetic resonance signal of the 13.sub.C is enhanced through the polarization transfer. There are sometimes the cases where, through the returning of the polarization from the 13.sub.C to the 1.sub.H, it is possible to receive the information on the spins of 13.sub.C from the spins of the 1.sub.H.

Abstract: First and second RF pulses are applied to a .sup.1 H and, simultaneously with or after the application of the second RF pulse, a third RF pulse is applied to the .sup.13 C magnetically coupled to the .sup.1 H, whereby there occurs a first polarization transfer from the spin of the .sup.1 H to the spin of the .sup.13 C. After the first polarization transfer, a fourth RF pulse is applied to the .sup.13 C. After the application of the fourth RF pulse, a fifth RF pulse is applied to the .sup.1 H together with a first slice gradient magnetic pulse. By doing so, those .sup.1 H spins in the first area are selectively excited, there occurs a second polarization transfer from the spin of the .sup.13 C to the spin of the .sup.1 H and those first MR signals are collected from those spins of the .sup.1 H in the first area experiencing the first and second polarization transfers. After the collection of a first MR signal, a sixth RF pulse is applied to the .sup.

Abstract: In an improved INEPT pulse sequence, an excitation pulse, a refocus pulse and an excitation pulse are sequentially applied for .sup.1 H spins. A refocus pulse and an excitation pulse are sequentially applied for .sup.13 C spins that are spin-spin coupled with the .sup.1 H spins. A magnetic resonance signal is acquired from .sup.1 H spins or .sup.13 C spins. The second refocus pulse for .sup.1 H is applied as a slice selective pulse at a time different from the time the first refocus pulse for .sup.13 C is applied. This allows localization to be achieved without adversely affecting the flip angle of the first refocus pulse for .sup.13 C.

Abstract: This specification discloses an invention directed to an ultrasonic cleaning apparatus for cleaning a cleaning target. The ultrasonic cleaning apparatus includes a liquid discharge nozzle having a discharge port to discharge a liquid therethrough, an ultrasonic vibrator for applying ultrasonic vibrations to the liquid which is to be supplied to the nozzle, and a cleaning member which is mounted on the discharge port of the nozzle, vibrates while holding therein the liquid discharged through the discharge port, and comes into contact with the cleaning target with a predetermined area, thereby scrub-cleaning the surface of the cleaning target.

Abstract: In an improved INEPT pulse sequence, an excitation pulse, a refocus pulse and an excitation pulse are sequentially applied for .sup.1 H spins. A refocus pulse and an excitation pulse are sequentially applied for .sup.13 C spins that are spin--spin coupled with the .sup.1 H spins. A magnetic resonance signal is acquired from .sup.1 H spins or .sup.13 C spins. The second refocus pulse for .sup.1 H is applied as a slice selective pulse at a time different from the time the first refocus pulse for .sup.13 C is applied. This allows localization to be achieved without adversely affecting the flip angle of the first refocus pulse for .sup.13 C.

Abstract: In a semiconductor device according to this invention, a first insulating film formed on only a pattern formation conductive film on a semiconductor substrate and having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness of the first insulating film is formed on the semiconductor substrate. A second insulating film having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness and having a refractive index different from that of the first insulating film is formed on only the first insulating film. A total reflectance of the first and second insulating films is less than 25%. A photosensitive film is formed on the second insulating film and exposed through a reticle to form a predetermined pattern. Etching is performed using the photosensitive film having this pattern to form a conductive pattern.

Abstract: In an improved INEPT pulse sequence, an excitation pulse, a refocus pulse and an excitation pulse are sequentially applied for .sup.1 H spins. A refocus pulse and an excitation pulse are sequentially applied for .sup.13 C spins that are spin-spin coupled with the .sup.1 H spins. A magnetic resonance signal is acquired from .sup.1 H spins or .sup.13 C spins. The second refocus pulse for .sup.1 H is applied as a slice selective pulse at a time different from the time the first refocus pulse for .sup.13 C is applied. This allows localization to be achieved without adversely affecting the flip angle of the first refocus pulse for .sup.13 C.

Abstract: In a semiconductor device according to this invention, a first insulating film formed on only a pattern formation conductive film on a semiconductor substrate and having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness of the first insulating film is formed on the semiconductor substrate. A second insulating film having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness and having a refractive index different from that of the first insulating film is formed on only the first insulating film. A total reflectance of the first and second insulating films is less than 25%. A photosensitive film is formed on the second insulating film and exposed through a reticle to form a predetermined pattern. Etching is performed using the photosensitive film having this pattern to form a conductive pattern.

Abstract: An MOS transistor comprises a projection formed on the surface of a semiconductor substrate, a gate insulating film having an upper portion located on the upper surface of the projection and a pair of side portions extending from the upper portion and located on the side surfaces of the projection, source and drain regions located in the projection to sandwich the gate insulating film and to be exposed on the upper surface of the projection, and a gate electrode, having first and second portions respectively formed on the upper and side portions of the gate insulating film, for generating a depletion layer extending deeper into the projection than would a depletion layer generated by only the first portion, in the portion of the projection facing the first portion.

Abstract: A dynamic random access memory with a stacked capacitor cell structure is disclosed which has a memory cell provided on a silicon substrate and having a MOSFET and a capacitor. An insulative layer is formed on the substrate, and a first polycrystalline silicon layer is formed on this insulative layer. These layers are simultaneously subjected to etching and define a contact hole which penetrates them to come in contact with the surface of the source. A second polycrystalline silicon layer is formed on the first polycrystalline silicon layer to uniformly cover the inner wall of the contact hole and that surface portion of the source which is exposed through the contact hole. The first and second silicon layers are simultaneously subjected to patterning to provide the lower electrode of the capacitor.