Abstract: A light emitting device includes a non-nucleation layer on which a step is formed to define a non-nucleation surface. Compound semiconductor islands, each consisting of n-type and p type semiconductor regions, are formed along a wall surface constituting the boundary of the step, and outer and inner electrodes are formed thereon, with the wiring section for the outer electrodes being formed on the surface of the non-nucleation layer which is at a level higher than the non-nucleation surface. The electrodes and the electrode wiring section are positioned substantially at the same level, thus attaining a reduction in resistance value and an increase in strength.