Patents by Inventor Hideji SHIBATA

Hideji SHIBATA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate
    Patent number: 9177799
    Abstract: Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.
    Type: Grant
    Filed: January 2, 2013
    Date of Patent: November 3, 2015
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yoshinori Imai, Hideji Shibata, Takafumi Sasaki
  • SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE MANUFACTURING METHOD
    Publication number: 20100297832
    Abstract: Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.
    Type: Application
    Filed: May 18, 2010
    Publication date: November 25, 2010
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Yoshinori IMAI, Hideji SHIBATA, Takafumi SASAKI