Abstract: A light-emitting element including: a stacked body; a light-emitting surface; and a reflecting body. The stacked body includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers, and has first and second surfaces on a side opposite to the active layer, and a circumferential surface that connects the first surface and the second surface and includes an end surface of the active layer, a groove formed in the first semiconductor layer from the first surface toward the active layer, having a depth such that the groove is separated from the active layer, and extending in a direction parallel to the first surface. The light-emitting surface is positioned on the first surface on a side opposite to the active layer and emits light generated in the active layer. The reflecting body reflects light emitted from the end surface toward the groove.

Abstract: Provided is a semiconductor light emitting element including a semiconductor stacked structure having a projecting portion from which light is emitted, an insulating layer provided on a side face of the projecting portion and a bottom face on a periphery of the projecting portion, a transparent electrode provided on a top face of the projecting portion and on at least part of a front surface of the insulating layer, and an electrode covering the bottom face on the periphery of the projecting portion and covering at least part of the transparent electrode provided on the front surface of the insulating layer.

Abstract: A light-emitting device according to an embodiment of the present technology includes a semiconductor light-emitting section and a base. The base supports the semiconductor light-emitting section, and includes a light extraction surface and a side surface including a concave portion and a convex portion that are alternately arranged in a specified direction. This makes it possible to control an emission direction (a scattering direction) of light emitted from the side surface. This results in being able to provide a light-emitting device that is capable of controlling light emitted from a side surface of the light-emitting device, and a method for producing the light-emitting device.

Abstract: A light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23, and a first portion 22A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32. A second portion 22B of the second compound semiconductor layer is formed on the first portion 22A of the second compound semiconductor layer, apart from an edge portion 22a3 of the first portion 22A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22B of the second compound semiconductor layer, and light is outputted at least from the top surface 22b1 and a side surface 22b2 of the second portion 22B of the second compound semiconductor layer.

Abstract: Provided is a light emitting diode including: a columnar laminated structure 20 in which a first compound semiconductor layer 21, a light emitting layer 23 formed of a compound semiconductor, and a first portion 22A of a second compound semiconductor layer are laminated; a first electrode 31 electrically connected to the first compound semiconductor layer 21; and a second electrode 32. A second portion 22B of the second compound semiconductor layer is formed on the first portion 22A of the second compound semiconductor layer, apart from an edge portion 22a3 of the first portion 22A of the second compound semiconductor layer, the second electrode 32 is formed at least on a top surface of the second portion 22B of the second compound semiconductor layer, and light is outputted at least from the top surface 22b1 and a side surface 22b2 of the second portion 22B of the second compound semiconductor layer.

Abstract: The light-emitting element of the present disclosure has a constant light emission intensity over a specific range of emission angle of light emitted from the center of its main light-emitting surface.

Abstract: A light emitting element includes: a laminated body including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer in this order, the second conductive semiconductor layer having a light extraction surface; and a recombination suppression structure provided in vicinity of an end surface of the active layer, the recombination suppression structure having a bandgap larger than a bandgap of the active layer.

Abstract: A light emitting device includes: a laminated body including a first-conductivity type semiconductor layer, a light emitting layer, and a second-conductivity type semiconductor layer in this order; a contact layer provided in contact with the second-conductivity type semiconductor layer at least at a peripheral edge of the second-conductivity type semiconductor layer; a first electrode electrically connected to the first-conductivity type semiconductor layer; a second electrode provided nearer to the first-conductivity type semiconductor layer than the second-conductivity type semiconductor layer; and a conductor electrically connecting the second electrode and the contact layer to each other.

Abstract: Disclosed herein is a light-emitting element including: a first conductivity type semiconductor layer; a light-emitting functional layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the light-emitting functional layer; a first conductivity type electrode which has continuity with the exposed portion of the first conductivity type semiconductor layer; a second conductivity type electrode which has continuity with the second conductivity type semiconductor layer; an insulating layer which lies between the light-emitting functional layer, second conductivity type semiconductor layer and second conductivity type electrode on one part and the first conductivity type electrode on the other part; and an annex insulating layer annexed to the insulating layer to form a virtual diode having rectifying action in the opposite direction to that of a diode made up of the second conductivity type semiconductor layer, light-emitting functional layer and f

Abstract: Disclosed herein is a light-emitting element including: a first conductivity type semiconductor layer; a light-emitting functional layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the light-emitting functional layer; a first conductivity type electrode which has continuity with the exposed portion of the first conductivity type semiconductor layer; a second conductivity type electrode which has continuity with the second conductivity type semiconductor layer; an insulating layer which lies between the light-emitting functional layer, second conductivity type semiconductor layer and second conductivity type electrode on one part and the first conductivity type electrode on the other part; and an annex insulating layer annexed to the insulating layer to form a virtual diode having rectifying action in the opposite direction to that of a diode made up of the second conductivity type semiconductor layer, light-emitting functional layer and f

Abstract: An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution of reflectivity compared to that of unalloyed silver, the reflector layer is made from a silver-base alloy containing a major proportion of silver and at least either one of copper, gold, palladium, neodymium, silicon, iridium, nickel, tungsten, zinc, gallium, titanium, magnesium, yttrium, indium, and tin.

Abstract: An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture.

Abstract: A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.

Abstract: An LED includes a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating light. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflector of electroconductive material is formed on the other major surface of the semiconductor region for reflecting the light back toward the light-emitting surface of the semiconductor region. For protecting the LED against breakdown from overvoltages, a zener diode is employed which takes the form of a baseplate having two semiconductor regions of opposite conductivity types sandwiched between a pair of electrodes in the form of metal layers. The protector baseplate is integrated with the light-generating semiconductor region by joining one of the metal layers to the reflector under heat and pressure, thus serving as both mechanical support and overvoltage protector for the LED.

Abstract: An LED is disclosed which comprises a nitride-made main semiconductor region formed on a substrate for generating light, and an electrode formed on the main semiconductor region to a thickness sufficiently small to transmit the light from the main semiconductor region. The electrode is made from a silver-base alloy, rather than from silver only, that contains an additive or additives selected to protect the electrode against oxidation and/or sulfurization and to enhance the chemical stability of the electrode without loss in contact ohmicity.

Abstract: An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution of reflectivity compared to that of unalloyed silver, the reflector layer is made from a silver-base alloy containing a major proportion of silver and at least either one of copper, gold, palladium, neodymium, silicon, iridium, nickel, tungsten, zinc, gallium, titanium, magnesium, yttrium, indium, and tin.

Abstract: An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface of the semiconductor region, via an ohmic contact layer, is a reflective metal layer for reflecting the light that has traversed the ohmic contact layer, back toward the semiconductor region. A transparent antidiffusion layer is interposed between the ohmic contact layer and the reflective layer in order to prevent the ohmic contact layer and the reflective layer from thermally diffusing from one into the other to the impairment of the reflectivity of the reflective layer.

Abstract: A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.

Abstract: An LED has a light-generating semiconductor region formed on an electroconductive baseplate via a reflector layer of silver or silver-base alloy. The light-generating semiconductor region has an active layer between claddings of opposite conductivity types. An anti-migration sheath envelopes either or both of the reflector layer and light-generating semiconductor region in order to prevent the reflector metal from migrating onto the semiconductor region with the consequent possible short-circuiting of the claddings of the active layer.

Abstract: An LED includes a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating light. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflector of electroconductive material is formed on the other major surface of the semiconductor region for reflecting the light back toward the light-emitting surface of the semiconductor region. For protecting the LED against breakdown from overvoltages, a zener diode is employed which takes the form of a baseplate having two semiconductor regions of opposite conductivity types sandwiched between a pair of electrodes in the form of metal layers. The protector baseplate is integrated with the light-generating semiconductor region by joining one of the metal layers to the reflector under heat and pressure, thus serving as both mechanical support and overvoltage protector for the LED.