Patents by Inventor Hidekazu Hasegawa

Hidekazu Hasegawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5323021
    Abstract: A bipolar transistor and a diode are incorporated in a semiconductor integrated circuit device, and an emitter electrode is constituted by lower and upper doped polysilicon films sandwiching an oxygen-leakage film which tunnels minority carriers of the base therethrough at higher probability than the majority carriers so as to enhance the emitter injection efficiency, thereby allowing a designer to increase the base width and the distance from the p-n junction between the anode and the cathode for improving the breakdown voltage of the diode without sacrifice of the current amplification factor.
    Type: Grant
    Filed: May 17, 1993
    Date of Patent: June 21, 1994
    Assignee: NEC Corporation
    Inventor: Hidekazu Hasegawa