Abstract: There is provided a processing method of a wafer having a functional layer on a front surface side. The processing method includes a laser processing step of forming laser processed grooves along streets while removing the functional layer along the streets by executing irradiation with a laser beam and a cut groove forming step of forming cut grooves inside the laser processed grooves along the streets by cutting the wafer by a cutting blade. The processing method also includes a grinding step of causing the cut grooves to be exposed on a back surface side of the wafer and dividing the wafer into plural device chips by grinding the back surface side of the wafer and thinning the wafer and a processing distortion removal step of supplying a gas in a plasma state to the back surface side of the wafer and removing processing distortion.

Abstract: A method of processing a wafer includes a grinding step of grinding a wafer that has first insulating films covering via electrodes, from a reverse side thereof, an electrode protruding step of protruding the via electrodes covered with the first insulating films from the reverse side by way of etching, a distorted layer forming step of forming a distorted layer on the reverse side of the wafer, an insulating film forming step of forming a second insulating film on the reverse side of the wafer, and an electrode forming step of removing the first insulating films and the second insulating film from the regions where they overlap the via electrodes, and forming reverse-side electrodes connected to the via electrodes.

Abstract: There is provided a processing method of a wafer having a functional layer on a front surface side. The processing method includes a laser processing step of forming laser processed grooves along streets while removing the functional layer along the streets by executing irradiation with a laser beam and a cut groove forming step of forming cut grooves inside the laser processed grooves along the streets by cutting the wafer by a cutting blade. The processing method also includes a grinding step of causing the cut grooves to be exposed on a back surface side of the wafer and dividing the wafer into plural device chips by grinding the back surface side of the wafer and thinning the wafer and a processing distortion removal step of supplying a gas in a plasma state to the back surface side of the wafer and removing processing distortion.

Abstract: An electrostatic chuck is provided and has a holding surface for holding a wafer with a tape attached to one side of the wafer where the tape is in contact with the holding surface. The electrostatic chuck includes a disk-shaped member having a plurality of fine holes communicating with a vacuum source, where the fine holes are exposed to the holding surface. The disk-shaped member also includes a plurality of asperities formed on the holding surface and connected to the fine holes, and an electrode embedded in the disk-shaped member. The vacuum source is operated to produce a vacuum on the holding surface through the fine holes and thereby hold the wafer through the tape on the holding surface under suction, where the asperities formed on the holding surface function as a suction passage communicating with the fine holes.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves having a depth in excess of a finished thickness of the wafer while removing the patterns; a step of grinding a back surface side of the wafer to thin the wafer to the finished thickness, and to expose the laser processed grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A method of processing a wafer includes a grinding step of grinding a wafer that has first insulating films covering via electrodes, from a reverse side thereof, an electrode protruding step of protruding the via electrodes covered with the first insulating films from the reverse side by way of etching, a distorted layer forming step of forming a distorted layer on the reverse side of the wafer, an insulating film forming step of forming a second insulating film on the reverse side of the wafer, and an electrode forming step of removing the first insulating films and the second insulating film from the regions where they overlap the via electrodes, and forming reverse-side electrodes connected to the via electrodes.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves while removing the patterns; a step of forming cut grooves having a depth in excess of a finished thickness of the wafer, inside the laser processed grooves; a step of grinding the back surface side of the wafer to thin the wafer to the finished thickness and to expose the cut grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves having a depth in excess of a finished thickness of the wafer while removing the patterns; a step of grinding a back surface side of the wafer to thin the wafer to the finished thickness, and to expose the laser processed grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.

Abstract: Disclosed herein is an electrostatic chuck having a holding surface for holding a wafer with a tape attached to one side of the wafer in the condition where the tape is in contact with the holding surface. The electrostatic chuck includes a disk-shaped member having a plurality of fine holes communicating with a vacuum source, the fine holes being exposed to the holding surface, a plurality of asperities formed on the holding surface and connected to the fine holes, and an electrode embedded in the disk-shaped member. When the vacuum source is operated to produce a vacuum on the holding surface through the fine holes and thereby hold the wafer through the tape on the holding surface under suction, the asperities formed on the holding surface function as a suction passage communicating with the fine holes.

Abstract: Disclosed herein is a decompression processing apparatus for processing a wafer in a decompressed state including a chamber having a decompressing unit configured to decompress the inside of the chamber, an opening and closing door configured to open and close a carrying-in-and-out opening for carrying the wafer into and out of the chamber, and an inert gas supply source configured to supply an inert gas to the inside of the chamber. The inside of the chamber is maintained in a dry state by continuing to supply the inert gas in a state in which the opening and closing door is opened.

Abstract: Disclosed herein is a decompression processing apparatus for processing a wafer in a decompressed state including a chamber having a decompressing unit configured to decompress the inside of the chamber, an opening and closing door configured to open and close a carrying-in-and-out opening for carrying the wafer into and out of the chamber, and an inert gas supply source configured to supply an inert gas to the inside of the chamber. The inside of the chamber is maintained in a dry state by continuing to supply the inert gas in a state in which the opening and closing door is opened.

Abstract: Disclosed herein is an etching method for a workpiece. The etching method includes the steps of dissociating an inert gas to form a plasma in an evacuated condition of a chamber to thereby remove moisture present on the workpiece set in the chamber, and next dissociating a fluorine-based stable gas instead of the inert gas to form a plasma in the chamber after removing the moisture to thereby dry-etch the workpiece.

Abstract: In a state in which a wafer held by a holding portion contacts with an attraction face of an electrostatic chuck after a loading unit loads the wafer into a chamber, the holding portion is connected to ground and a DC voltage is applied to a lower electrode. Then, the holding portion cancels the attraction of the wafer and is spaced away from the wafer thereby to charge the electrostatic chuck and the wafer with electric charge different in polarity from each other such that the wafer is attracted and held by the attraction face.

Abstract: Disclosed herein is an etching method for a workpiece. The etching method includes the steps of dissociating an inert gas to form a plasma in an evacuated condition of a chamber to thereby remove moisture present on the workpiece set in the chamber, and next dissociating a fluorine-based stable gas instead of the inert gas to form a plasma in the chamber after removing the moisture to thereby dry-etch the workpiece.

Abstract: An excellently pleasant feeling of softness and elastic resilience can be imparted to a fabric material treated with the inventive fabric finishing agent which is an aqueous emulsion of a copolymer obtained by the emulsion polymerization, in an aqueous emulsion of an organopolysiloxane having radical-polymerizable groups, e.g., vinyl groups, or mercapto-substituted hydrocarbon groups, e.g., 3-mercaptopropyl groups, as the polymerization medium of an acrylic or methacrylic monomer, e.g., alkyl acrylates and methacrylates, in a specified amount relative to the amount of the organopolysiloxane. The acrylic or methacrylic monomer may be partly replaced with a polyfunctional monomer, e.g., acrylic and methacrylic acids, N-methylol acrylamide, glycidyl methacrylate, 2-hydroxyethyl methacrylate and the like, and/or a monomer of the third class, e.g., styrene and acrylonitrile. The emulsion may be further admixed with an organohydrogen polysiloxane as a crosslinking agent and a catalyst for the crosslinking reaction.