Abstract: A magnetic sensor includes a substrate including a top surface, an insulating layer including an inclined surface, an MR element disposed on the inclined surface, a first insulating portion of an insulating material disposed on a part of the MR element, and a second insulating portion of an insulating material disposed on another part of the MR element at a position forward of the first insulating portion in a direction along the inclined surface, the direction being a direction away from the top surface of the substrate.

Abstract: A magnetic sensor includes a substrate including a top surface, an insulating layer including an inclined surface, an MR element disposed on the inclined surface, a first insulating portion of an insulating material disposed on a part of the MR element, and a second insulating portion of an insulating material disposed on another part of the MR element at a position forward of the first insulating portion in a direction along the inclined surface, the direction being a direction away from the top surface of the substrate.

Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element. The MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a first side surface including a first portion and a second portion, the first portion and the second portion having different angles with respect to the first inclined surface or the second inclined surface.

Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element structure. An MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a bottom surface facing the first inclined surface or the second inclined surface, a top surface, and a first surface connecting the bottom surface and the top surface and including two steps.

Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element. The MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a first side surface including a first portion and a second portion, the first portion and the second portion having different angles with respect to the first inclined surface or the second inclined surface.

Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element structure. An MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a bottom surface facing the first inclined surface or the second inclined surface, a top surface, and a first surface connecting the bottom surface and the top surface and including two steps.

Abstract: A fluorine-containing compound represented by general formula (1) by which high water-repellency can be obtained despite the small number of fluorine atoms: L-(R1—X—Rf—Y—R2)n??(1) wherein L represents an n-valent organic group; n represents an integer of 1 or more; Rf represents a linear or branched fluoroalkylene group containing 1 to 4 of at least any of a CF2 unit, a CFH unit and a CFRf? unit, and optionally having an ether bond, wherein Rf? represents a fluoroalkyl group having 1 carbon atom; R1 represents a direct bond, or a linear or branched hydrocarbon group having 1 to 4 carbon atoms; R2 represents a linear or branched hydrocarbon group having 7 to 29 carbon atoms, containing no fluorine atoms, and optionally having an ether bond; and X and Y each independently represent a direct bond or a divalent linking group.

Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element. The MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a first side surface including a first portion and a second portion, the first portion and the second portion having different angles with respect to the first inclined surface or the second inclined surface.

Abstract: A magnetic sensor includes a substrate including a top surface; an insulating layer disposed on the substrate, the insulating layer including first and second inclined surfaces each inclined with respect to the top surface of the substrate; and an MR element structure. An MR element is disposed on the first inclined surface or the second inclined surface. The MR element includes a bottom surface facing the first inclined surface or the second inclined surface, a top surface, and a first surface connecting the bottom surface and the top surface and including two steps.

Abstract: A magnetic sensor includes a substrate including a top surface, an insulating layer including an inclined surface, an MR element disposed on the inclined surface, a first insulating portion of an insulating material disposed on a part of the MR element, and a second insulating portion of an insulating material disposed on another part of the MR element at a position forward of the first insulating portion in a direction along the inclined surface, the direction being a direction away from the top surface of the substrate.

Abstract: A magneto-resistive effect element (MR element) has an upper shield that is magnetized in a cross track direction, a lower shield that is positioned at an interval relative to the upper shield in a down track direction, and a multilayer film that is positioned between the upper shield and the lower shield and that faces an air bearing surface (ABS). The multilayer film has a free layer where its magnetization direction fluctuates relative to an external magnetic field, a pinned layer where its magnetization direction is pinned against the external magnetic field, a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and an insulating layer that is positioned at a back side of the free layer viewed from the ABS. The MR element further has a pair of side shields that are positioned at both sides of the free layer and the insulating layer in a cross track direction.

Abstract: A magneto-resistive effect element (MR element) has an upper shield that is magnetized in a cross track direction, a lower shield that is positioned at an interval relative to the upper shield in a down track direction, and a multilayer film that is positioned between the upper shield and the lower shield and that faces an air bearing surface (ABS). The multilayer film has a free layer where its magnetization direction fluctuates relative to an external magnetic field, a pinned layer where its magnetization direction is pinned against the external magnetic field, a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and an insulating layer that is positioned at a back side of the free layer viewed from the ABS. The MR element further has a pair of side shields that are positioned at both sides of the free layer and the insulating layer in a cross track direction.

Abstract: A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2?G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.

Abstract: A power supply system for a display panel includes a power supply regulator that regulates a power supply voltage of a display driver of a power supply circuit connected to the display panel, and a protection circuit that protects the display driver against an overvoltage.

Abstract: A power supply system for a display panel includes a power supply regulator that regulates a power supply voltage of a display driver of a power supply circuit connected to the display panel, and a protection circuit that protects the display driver against an overvoltage.

Abstract: In a negative step-up charge pump circuit according to the present invention, of a plurality of stages of charge transfer transistors and an output transistor, the former-stage transistors are P channel type field effect transistors, and the later-stage transistors are N channel type field effect transistors. With such configuration, it is possible to avoid start-up failure and current driving performance deterioration resulting from an increase in the number of stages of step-up units without complicating processes and increasing the chip size.

Abstract: The level shifter circuit includes a differential amp (2) that uses a differential input stage made of a pair of N-channel field effect transistors (N1) and (N2) that are connected between the application terminal of a ground potential VSS and the application terminal of a load potential MVDD, receives in a differential mode an input signal IN that is pulse-driven between the ground potential VSS and a positive potential VDDI, and by differential amplification thereof, generates an output signal OUT that is pulse-driven between the ground potential VSS and the load potential MVDD.

Abstract: A power supply circuit has a charge pump (CHP) step-up circuit including multiple CHP units for stepping up a given power supply voltage to a step-up voltage higher than the power supply voltage, and, based on an output voltage setting signal, converts the step-up voltage to a required output voltage. A comparator compares the detection voltage associated with the output voltage with a reference voltage to generate a comparison signal. In supplying a required output voltage, the number of operable CHP units can be changed to control the step-up voltage based on the comparison signal.

Abstract: A machining unit that is supported on a machine tool and machines a workpiece by a revolving tool with a main spindle section being driven and rotated includes an eccentric rotational section, a tool holder, a tool revolution-radius changing mechanism, and a cutting-edge-orientation correcting mechanism. The eccentric rotational section is disposed on the main spindle section, and is rotatable about an eccentric axis that is located eccentrically at any distance in a radial direction of the main spindle section from a rotation center of the main spindle section. The tool holder is disposed on the eccentric rotational section, and supports the tool. The tool revolution-radius changing mechanism moves the tool in the radial direction, and changes the radius of the revolution of the tool by rotating the eccentric rotational section about the eccentric axis.

Abstract: A machining unit that is supported on a machine tool and machines a workpiece by a revolving tool with a main spindle section being driven and rotated includes an eccentric rotational section, a tool holder, a tool revolution-radius changing mechanism, and a cutting-edge-orientation correcting mechanism. The eccentric rotational section is disposed on the main spindle section, and is rotatable about an eccentric axis that is located eccentrically at any distance in a radial direction of the main spindle section from a rotation center of the main spindle section. The tool holder is disposed on the eccentric rotational section, and supports the tool. The tool revolution-radius changing mechanism moves the tool in the radial direction, and changes the radius of the revolution of the tool by rotating the eccentric rotational section about the eccentric axis.