Patents by Inventor Hidekazu Miyake
Hidekazu Miyake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240227344Abstract: A method for manufacturing a member, the member including: a first member made of a metal comprising a base material of which a surface is made of a material containing Al as a main component, and an irregular part formed as irregularities on the surface of the base material, the irregular part being made of the material used for the surface of the base material; and an adhesive layer formed on a surface of the irregular part, the adhesive layer comprising an adhesive formed therein, the adhesive having an isocyanate group for bonding the first member with a second member, the method including: forming the irregular part on the surface of the base material; applying the adhesive to the surface of the irregular part; and bonding the surface of the irregular part with the adhesive by drying the adhesive, and thereby forming the adhesive layer.Type: ApplicationFiled: December 15, 2023Publication date: July 11, 2024Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Haruhisa IIMURO, Masahiro UCHIMURA, Shunsuke NARA, Hidekazu MIYAKE
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Publication number: 20240184177Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: ApplicationFiled: January 31, 2024Publication date: June 6, 2024Applicant: Japan Display Inc.Inventors: Yohei YAMAGUCHI, Arichika ISHIDA, Hidekazu MIYAKE, Hiroto MIYAKE, Isao SUZUMURA
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Publication number: 20240130165Abstract: According to one embodiment, a display device includes a plurality of display elements and a partition which surrounds each of the plurality of display elements. The display elements each include a lower electrode, an upper electrode opposing the lower electrode and an organic layer disposed between the lower electrode and the upper electrode. The partition includes a conductive lower portion and an upper portion protruding from a side surface of the lower portion. Further, the partition includes an aperture through which the lower portion and the upper portion penetrate.Type: ApplicationFiled: October 10, 2023Publication date: April 18, 2024Applicant: Japan Display Inc.Inventors: Hidekazu MIYAKE, Naoki TOKUDA
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Patent number: 11921392Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: GrantFiled: September 15, 2022Date of Patent: March 5, 2024Assignee: Japan Display Inc.Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Publication number: 20240030226Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: October 4, 2023Publication date: January 25, 2024Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Patent number: 11810921Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: November 9, 2022Date of Patent: November 7, 2023Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Publication number: 20230196247Abstract: A communication apparatus includes a business data storage unit which stores business data representative of a conducting history; an attribute imparting unit which generates attribute data representative of a conducting condition of the business in the first company; an attribute data storage unit which stores the attribute data corresponding to the first company; an attribute data disclosing unit which discloses the attribute data to a second company; an improvement proposal input unit which inputs therein information relating to an improvement proposal of the business for the first company; an improvement proposal disclosing unit which discloses the information relating to the improvement proposal to the first company; an improvement proposal acceptance receiver which receives a response of acceptance of the improvement proposal from the first company; and a proposal target disclosing unit which discloses information relating to the first company to the second company.Type: ApplicationFiled: February 13, 2023Publication date: June 22, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, Toshiba Digital Solutions CorporationInventors: Masaru SUZUKI, Noriaki KOYAMA, Go FUJINO, Yoshimasa NIRASAWA, Yoshikata TOBITA, Hidekazu MIYAKE, Satoshi SONOH, Kentaro FURIHATA
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Publication number: 20230081420Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: November 9, 2022Publication date: March 16, 2023Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
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Publication number: 20230020074Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: ApplicationFiled: September 15, 2022Publication date: January 19, 2023Applicant: Japan Display Inc.Inventors: Yohei YAMAGUCHI, Arichika ISHIDA, Hidekazu MIYAKE, Hiroto MIYAKE, Isao SUZUMURA
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Patent number: 11521990Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: June 2, 2021Date of Patent: December 6, 2022Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Patent number: 11474406Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: GrantFiled: December 18, 2020Date of Patent: October 18, 2022Assignee: Japan Display Inc.Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Patent number: 11145764Abstract: A display device includes a pixel layer for displaying an image and a circuit layer including a thin film transistor for driving the pixel layer. The thin film transistor includes a semiconductor layer including a channel region and a source region and a drain region sandwiching the channel region, a first gate electrode facing the channel region on a first side which is either above or below the semiconductor layer, a second gate electrode facing at least the channel region and the source region on a second side opposite to the first side, a source electrode connected to the source region, and a drain electrode connected to the drain region. The source electrode penetrates through the semiconductor layer and is connected to the second gate electrode on the second side.Type: GrantFiled: August 6, 2019Date of Patent: October 12, 2021Assignee: Japan Display Inc.Inventor: Hidekazu Miyake
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Publication number: 20210288078Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: June 2, 2021Publication date: September 16, 2021Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Patent number: 11056514Abstract: Separation of wirings formed on an organic passivation film is prevented in an organic EL display device or a liquid crystal display device. The organic EL display device includes a TFT formed on a substrate and an organic passivation film formed to cover the TFT. An intermediate film containing SiO or SiN is formed to cover the organic passivation film. An insulation film formed with an organic material is formed on the intermediate film. A reflective electrode is formed on the intermediate film. The reflective electrode is connected to the TFT via a through-hole formed in the organic passivation film and a through-hole formed in the intermediate film.Type: GrantFiled: July 26, 2017Date of Patent: July 6, 2021Assignee: Japan Display Inc.Inventors: Yoshinori Ishii, Kazufumi Watabe, Hidekazu Miyake
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Patent number: 11049882Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: GrantFiled: January 15, 2020Date of Patent: June 29, 2021Assignee: Japan Display Inc.Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
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Publication number: 20210141256Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: ApplicationFiled: December 18, 2020Publication date: May 13, 2021Applicant: Japan Display Inc.Inventors: Yohei YAMAGUCHI, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Patent number: 10895792Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.Type: GrantFiled: December 12, 2019Date of Patent: January 19, 2021Assignee: Japan Display Inc.Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Publication number: 20200378103Abstract: A drain socket includes a first connection part connected to a drain pipe of a toilet bowl; a second connection part connected to a drain piping in a floor or the like; and a drain channel body connecting the first connection part and the second connection part. The drain channel body includes an inclined part inclined to one side in the front-back direction toward a lower side. A restriction part is provided at an upstream end portion of the drain channel body. A surface of the restriction part located on the one side where the inclined part is inclined has a portion where a horizontal distance from a center C of the first connection part increases from the center of the surface in the left-right direction toward an end side of the surface in the left-right direction.Type: ApplicationFiled: May 29, 2020Publication date: December 3, 2020Applicant: LIXIL CorporationInventors: Maiko NAKAGAWA, Takamasa INA, Hidekazu MIYAKE, Naoto YONEDU
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Patent number: 10833134Abstract: An EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and an EL element having an anode, a luminous layer and a cathode. A protective film covers the scanning line, the video signal line and the EL element. A touch panel detection electrode is disposed above the protective film, and connected to a wiring which is disposed under the protective film via a through hole of the protective film. The touch panel detection electrode has an angle to intersect with the video signal line.Type: GrantFiled: December 16, 2019Date of Patent: November 10, 2020Assignee: Japan Display Inc.Inventors: Hidekazu Miyake, Kazufumi Watabe, Yoshinori Ishii
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Publication number: 20200152668Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.Type: ApplicationFiled: January 15, 2020Publication date: May 14, 2020Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI