Patents by Inventor Hidekazu Miyake

Hidekazu Miyake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240184177
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
    Type: Application
    Filed: January 31, 2024
    Publication date: June 6, 2024
    Applicant: Japan Display Inc.
    Inventors: Yohei YAMAGUCHI, Arichika ISHIDA, Hidekazu MIYAKE, Hiroto MIYAKE, Isao SUZUMURA
  • Publication number: 20240147516
    Abstract: A terminal apparatus for communicating with a first terminal apparatus and a second terminal apparatus is responsible to relay communication between the first terminal apparatus and the second terminal apparatus. The terminal apparatus measures a sidelink Reference Signal Received Power (SL-RSRP) in each of communication with the first terminal apparatus and communication with the second terminal apparatus, and determines whether the two SL-RSRPs are equal to or greater than a threshold and notifies the first terminal apparatus that the first terminal apparatus and the second terminal apparatus are in proximity in a case that the two SL-RSRPs are determined to be equal to or greater than the threshold, and does not notify the first terminal apparatus that the first terminal apparatus and the second terminal apparatus are in proximity in a case that the two SL-RSRPs are not determined to be equal to or greater than the threshold.
    Type: Application
    Filed: February 14, 2023
    Publication date: May 2, 2024
    Inventors: Takuma KAWANO, SHOHEI YAMADA, HIDEKAZU TSUBOI, Kyosuke INOUE, TAICHI MIYAKE
  • Publication number: 20240147384
    Abstract: A terminal apparatus for communicating with a second terminal apparatus via a first terminal apparatus. The third terminal apparatus receives a sidelink transmission from the second terminal apparatus to the first terminal apparatus, measures a sidelink Reference Signal Received Power (SL-RSRP) from the received sidelink transmission, and determines whether the SL-RSRP is equal to or greater than a threshold, and notifies a higher layer that the second terminal apparatus is in proximity in a case that the SL-RSRP is determined to be equal to or greater than the threshold, and does not notify the higher layer that the second terminal apparatus is in proximity in a case that the SL-RSRP is not determined to be equal to or greater than the threshold.
    Type: Application
    Filed: February 13, 2023
    Publication date: May 2, 2024
    Inventors: Takuma KAWANO, Shohei YAMADA, Hidekazu TSUBOI, Kyosuke INOUE, Taichi MIYAKE
  • Publication number: 20240147498
    Abstract: A terminal apparatus for communicating with a second terminal apparatus via a first terminal apparatus is responsible to relay communication between the first terminal apparatus and the second terminal apparatus. The terminal apparatus receives a sidelink transmission including first Sidelink Control Information (SCI) and a sidelink transmission including second SCI corresponding to the first SCI, measures a Sidelink Reference Signal Received Power (SL-RSRP) from the sidelink transmission including the first SCI, and associates the measured SL-RSRP with an identifier included in the second SCI, and notifies a higher layer of the measured SL-RSRP and the identifier, the identifier indicating a transmission source of the sidelink transmission including the first SCI.
    Type: Application
    Filed: February 14, 2023
    Publication date: May 2, 2024
    Inventors: Takuma KAWANO, SHOHEI YAMADA, HIDEKAZU TSUBOI, Kyosuke INOUE, TAICHI MIYAKE
  • Publication number: 20240147344
    Abstract: A terminal apparatus for communicating with a first terminal apparatus and a second terminal apparatus is responsible to relay communication between the first terminal apparatus and the second terminal apparatus, and transmits, to the second terminal apparatus, a configuration for sidelink reception used for communication with the first terminal apparatus.
    Type: Application
    Filed: February 14, 2023
    Publication date: May 2, 2024
    Inventors: Takuma KAWANO, SHOHEI YAMADA, Kyosuke INOUE, HIDEKAZU TSUBOI, TAICHI MIYAKE
  • Publication number: 20240147499
    Abstract: A terminal apparatus for communicating with a first terminal apparatus and a second terminal apparatus is responsible to relay communication between the first terminal apparatus and the second terminal apparatus, and includes a processing unit and a transmitter, and the processing unit transmits a sidelink reception configuration for the first terminal apparatus to the second terminal apparatus.
    Type: Application
    Filed: February 14, 2023
    Publication date: May 2, 2024
    Inventors: Takuma KAWANO, SHOHEI YAMADA, HIDEKAZU TSUBOI, Kyosuke INOUE, TAICHI MIYAKE
  • Publication number: 20240130165
    Abstract: According to one embodiment, a display device includes a plurality of display elements and a partition which surrounds each of the plurality of display elements. The display elements each include a lower electrode, an upper electrode opposing the lower electrode and an organic layer disposed between the lower electrode and the upper electrode. The partition includes a conductive lower portion and an upper portion protruding from a side surface of the lower portion. Further, the partition includes an aperture through which the lower portion and the upper portion penetrate.
    Type: Application
    Filed: October 10, 2023
    Publication date: April 18, 2024
    Applicant: Japan Display Inc.
    Inventors: Hidekazu MIYAKE, Naoki TOKUDA
  • Publication number: 20240114574
    Abstract: A terminal apparatus for communicating with a base station apparatus by using a direct path and an indirect path determines whether a signaling radio bearer is configured on an indirect path in a case that radio link failure is detected on the direct path, and transmits information indicating that the radio link failure has occurred on the direct path via the signaling radio bearer in a case that the signaling radio bearer is determined to be configured on the indirect path.
    Type: Application
    Filed: February 9, 2023
    Publication date: April 4, 2024
    Inventors: Takuma KAWANO, Shohei YAMADA, Hidekazu TSUBOI, Kyosuke INOUE, Taichi MIYAKE
  • Publication number: 20240114576
    Abstract: A terminal apparatus for communicating with a base station apparatus by using a direct path and an indirect path determines whether a signaling radio bearer is configured on the direct path in a case that radio link failure is detected on the indirect path and a signaling radio bearer is not configured with a split bearer, and transmits, via the signaling radio bearer, information indicating that the radio link failure has occurred on the indirect path in a case that the signaling radio bearer is determined to be configured on the direct path.
    Type: Application
    Filed: February 7, 2023
    Publication date: April 4, 2024
    Inventors: Takuma KAWANO, SHOHEI YAMADA, HIDEKAZU TSUBOI, Kyosuke INOUE, TAICHI MIYAKE
  • Publication number: 20240114568
    Abstract: A terminal apparatus for communicating with a base station apparatus by using a direct path and an indirect path determines whether a signaling radio bearer is configured on the indirect path in a case that radio link failure is detected on the direct path and the signaling radio bearer is not configured with a split bearer, and a transmitter transmits information indicating that the radio link failure has occurred on the direct path via a sidelink signaling radio bearer configured between the terminal apparatus and the relay terminal apparatus in a case that the signaling radio bearer is determined to not be configured on the indirect path.
    Type: Application
    Filed: February 9, 2023
    Publication date: April 4, 2024
    Inventors: Takuma KAWANO, SHOHEI YAMADA, HIDEKAZU TSUBOI, Kyosuke INOUE, TAICHI MIYAKE
  • Patent number: 11921392
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: March 5, 2024
    Assignee: Japan Display Inc.
    Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
  • Publication number: 20240030226
    Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
    Type: Application
    Filed: October 4, 2023
    Publication date: January 25, 2024
    Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
  • Patent number: 11810921
    Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
    Type: Grant
    Filed: November 9, 2022
    Date of Patent: November 7, 2023
    Assignee: Japan Display Inc.
    Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
  • Publication number: 20230196247
    Abstract: A communication apparatus includes a business data storage unit which stores business data representative of a conducting history; an attribute imparting unit which generates attribute data representative of a conducting condition of the business in the first company; an attribute data storage unit which stores the attribute data corresponding to the first company; an attribute data disclosing unit which discloses the attribute data to a second company; an improvement proposal input unit which inputs therein information relating to an improvement proposal of the business for the first company; an improvement proposal disclosing unit which discloses the information relating to the improvement proposal to the first company; an improvement proposal acceptance receiver which receives a response of acceptance of the improvement proposal from the first company; and a proposal target disclosing unit which discloses information relating to the first company to the second company.
    Type: Application
    Filed: February 13, 2023
    Publication date: June 22, 2023
    Applicants: KABUSHIKI KAISHA TOSHIBA, Toshiba Digital Solutions Corporation
    Inventors: Masaru SUZUKI, Noriaki KOYAMA, Go FUJINO, Yoshimasa NIRASAWA, Yoshikata TOBITA, Hidekazu MIYAKE, Satoshi SONOH, Kentaro FURIHATA
  • Publication number: 20230081420
    Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
    Type: Application
    Filed: November 9, 2022
    Publication date: March 16, 2023
    Inventors: Isao SUZUMURA, Kazufumi WATABE, Yoshinori ISHII, Hidekazu MIYAKE, Yohei YAMAGUCHI
  • Publication number: 20230020074
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
    Type: Application
    Filed: September 15, 2022
    Publication date: January 19, 2023
    Applicant: Japan Display Inc.
    Inventors: Yohei YAMAGUCHI, Arichika ISHIDA, Hidekazu MIYAKE, Hiroto MIYAKE, Isao SUZUMURA
  • Patent number: 11521990
    Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: December 6, 2022
    Assignee: Japan Display Inc.
    Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
  • Patent number: 11474406
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: October 18, 2022
    Assignee: Japan Display Inc.
    Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
  • Patent number: 11145764
    Abstract: A display device includes a pixel layer for displaying an image and a circuit layer including a thin film transistor for driving the pixel layer. The thin film transistor includes a semiconductor layer including a channel region and a source region and a drain region sandwiching the channel region, a first gate electrode facing the channel region on a first side which is either above or below the semiconductor layer, a second gate electrode facing at least the channel region and the source region on a second side opposite to the first side, a source electrode connected to the source region, and a drain electrode connected to the drain region. The source electrode penetrates through the semiconductor layer and is connected to the second gate electrode on the second side.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: October 12, 2021
    Assignee: Japan Display Inc.
    Inventor: Hidekazu Miyake
  • Publication number: 20210288078
    Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
    Type: Application
    Filed: June 2, 2021
    Publication date: September 16, 2021
    Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi