Abstract: In a reaction chamber (20), a used alkaline permanganate etching solution (12) is accommodated and an alkaline earth hydroxide (14) such as calcium hydroxide is added in the reaction chamber, a liquid inside of the reaction chamber is agitated, the liquid is exhausted from a side portion or a top portion of the reaction chamber through a filter (28), a precipitate (26) adhered to the filter is scraped off, and a precipitate containing a hardly soluble or insoluble matter incapable of passing through the filter and accumulated on a bottom portion of the reaction chamber is exhausted from the reaction chamber.

Abstract: In a reaction chamber (20), a used alkaline permanganate etching solution (12) is accommodated and an alkaline earth hydroxide (14) such as calcium hydroxide is added in the reaction chamber, a liquid inside of the reaction chamber is agitated, the liquid is exhausted from a side portion or a top portion of the reaction chamber through a filter (28), a precipitate (26) adhered to the filter is scraped off, and a precipitate containing a hardly soluble or insoluble matter incapable of passing through the filter and accumulated on a bottom portion of the reaction chamber is exhausted from the reaction chamber.

Abstract: A sterilizing disinfectant and an antimicrobial agent comprising a cationic polymer represented by general formula [1] and an antimicrobial material using a cationic polymer represented by general formula [1].

Abstract: A microbicidal disinfectant and an antimicrobial agent comprising a cation polymer represented by general formula [1] and an antimicrobial material using a cation polymer represented by general formula [1].

Abstract: A thermal reactor for processing semiconductor wafers includes a ring-like reactor body having a cylindrical outer surface and having a central depressed portion to define an inner circular space at the cross section of the reactor body along a longitudinal direction of the reactor body. A wafer holder for mounting the wafers vertically is positioned within the inner circular space and is rotated when a reaction gas is passed from an open bottom end of the reactor body toward a top end of the reactor body. The reaction gas is exhausted through a conduit placed along the outer surface of the reactor body. A plurality of plasma generating electrodes are positioned around the outer surface and within the central depressed portion of the reactor body in order to clean an inner side wall of the reactor body.

Abstract: A semiconductor device having a deposited phosphosilicate glass film, containing an insubstantial amount of hydrogen and a low phosphorus concentration, is manufactured at a high mass productivity. This semiconductor device is manufactured by first placing plural substrates for semiconductor devices to be treated in a reaction tube so that the main surfaces of the substrates are substantially vertically aligned with respect to one another and are substantially perpendicularly intersected by the central axis of the reaction tube, the reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof.

Abstract: Disclosed is a process for producing a semiconductor device, especially, a high speed silicon gate field effect semiconductor device, by diffusing an impurity substance, such as arsenic or phosphorus, into a polycrystalline silicon layer to be converted into a silicon gate having a high electroconductivity and into portions of a single crystal silicon substrate to be converted into source and drain regions, in a sealed capsule, at an elevated temperature, under a vacuum. During the above-mentioned diffusing operation, the impurity substance can diffuse into the polycrystalline silicon layer at a higher diffusing speed than into the single crystal silicon substrate.