Abstract: A display device and a method for manufacturing the same, for discharging static electricity generated in the manufacturing process of a display device using a mechanical shutter and thus preventing the mechanical shutter from being deformed by the static electricity are provided. The display device includes a TFT substrate having thin film transistors thereon respectively provided with a plurality of mechanical shutters located in a matrix and also having terminals thereon for supplying a signal to the thin film transistors from outside; and a counter substrate joined with the TFT substrate. Along at least one of an edge of the TFT substrate and an edge of the counter substrate, an injection opening for injecting an insulating liquid into an area between the TFT substrate and the counter substrate and a ground electrode for covering at least a part of an inner surface of the injection opening are provided.

Abstract: Provided is a display device, including: a sealing member including an opening and surrounding a space defined by a pair of light transmissive substrates; an end seal for closing the opening of the sealing member to form an encapsulation space; oil filled in the encapsulation space; a spacer for maintaining an interval between the pair of light transmissive substrates; a shutter; a drive portion arranged in the oil, for mechanically driving the shutter; and a wall portion formed on at least one of opposed surfaces of the pair of light transmissive substrates. The wall portion includes a part arranged at a position interrupting a shortest path between the opening of the sealing member and a display region. The wall portion is made of a material forming the spacer, the shutter, and the drive portion.

Abstract: Provided is a display device, including: a sealing member including an opening and surrounding a space defined by a pair of light transmissive substrates; an end seal for closing the opening of the sealing member to form an encapsulation space; oil filled in the encapsulation space; a spacer for maintaining an interval between the pair of light transmissive substrates; a shutter; a drive portion arranged in the oil, for mechanically driving the shutter; and a wall portion formed on at least one of opposed surfaces of the pair of light transmissive substrates. The wall portion includes a part arranged at a position interrupting a shortest path between the opening of the sealing member and a display region. The wall portion is made of a material forming the spacer, the shutter, and the drive portion.

Abstract: In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.

Abstract: Provided is a display device, including: a sealing member including an opening and surrounding a space defined by a pair of light transmissive substrates; an end seal for closing the opening of the sealing member to form an encapsulation space; oil filled in the encapsulation space; a spacer for maintaining an interval between the pair of light transmissive substrates; a shutter; a drive portion arranged in the oil, for mechanically driving the shutter; and a wall portion formed on at least one of opposed surfaces of the pair of light transmissive substrates. The wall portion includes apart arranged at a position interrupting a shortest path between the opening of the sealing member and a display region. The wall portion is made of a material forming the spacer, the shutter, and the drive portion.

Abstract: A pixel is formed by sealing an insulating liquid and floating particles in an area defined by a first substrate, a second substrate and partitions. The width of the partition has to be reduced in order to improve the pixel brightness by enlarging a flat electrode. In this case, the height of the partition has to be reduced for retaining the mechanical strength. If the height of the partition is reduced, an area of the partition electrode becomes small, thus failing to retain the memory effect. The planar surface of the partition is then formed into a zigzag shape so as to increase the area of the partition electrode.

Abstract: A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.

Abstract: Provided is a display device, including: a sealing member including an opening and surrounding a space defined by a pair of light transmissive substrates; an end seal for closing the opening of the sealing member to form an encapsulation space; oil filled in the encapsulation space; a spacer for maintaining an interval between the pair of light transmissive substrates; a shutter; a drive portion arranged in the oil, for mechanically driving the shutter; and a wall portion formed on at least one of opposed surfaces of the pair of light transmissive substrates. The wall portion includes apart arranged at a position interrupting a shortest path between the opening of the sealing member and a display region. The wall portion is made of a material forming the spacer, the shutter, and the drive portion.

Abstract: In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.

Abstract: The display device includes: an insulating substrate section that is a substrate having an insulation property; a thin film transistor section in which a thin film transistor is formed in each pixel on the insulating substrate section; a shutter mechanism section that is electrically driven by the thin film transistor of the thin film transistor section so as to control light transmission of each pixel. The shutter mechanism section has a mechanical layer that is a structural portion and a conductive layer that is formed on the mechanical layer. Both of the mechanical layer and the conductive layer are fixed in direct contact with the conductive portion formed on the thin film transistor section.

Abstract: A pixel is formed by sealing an insulating liquid and floating particles in an area defined by a first substrate, a second substrate and partitions. The width of the partition has to be reduced in order to improve the pixel brightness by enlarging a flat electrode. In this case, the height of the partition has to be reduced for retaining the mechanical strength. If the height of the partition is reduced, an area of the partition electrode becomes small, thus failing to retain the memory effect. The planar surface of the partition is then formed into a zigzag shape so as to increase the area of the partition electrode.

Abstract: A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.

Abstract: Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.

Abstract: Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.

Abstract: In bottom-gate-type thin film transistors used in a liquid crystal display device, a channel stopper layer is formed on a poly-Si layer thus stabilizing a characteristic of the thin film transistor. The channel stopper layer is formed into a desired shape by wet etching, and the poly-Si layer is formed into a desired shape by dry etching. By applying side etching to the channel stopper layer, a peripheral portion of the poly-Si layer is exposed from the channel stopper layer, and this region is brought into contact with an n+Si layer. Due to such constitution, ON resistance of the thin film transistor can be decreased thus increasing an ON current which flows in the thin film transistor.