Abstract: A semiconductor device includes a semiconductor chip provided inside with a p-n junction, an opaque sealing resin covering a surface of the semiconductor chip, and a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent light, which is generated when a forward current flows through the p-n junction and has a particular wavelength causing deterioration of the sealing resin, from reaching the sealing resin.

Abstract: A semiconductor device includes a semiconductor chip provided inside with a p-n junction, an opaque sealing resin covering a surface of the semiconductor chip, and a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent light, which is generated when a forward current flows through the p-n junction and has a particular wavelength causing deterioration of the sealing resin, from reaching the sealing resin.

Abstract: An object of the present invention is to stabilize and strengthen the strength of a bonding part between a metal electrode on a semiconductor chip and metal wiring connected thereto using a simple structure. Provided is a semiconductor device including a metal layer 130 on a surface of a metal electrode 120 formed on a semiconductor chip 110, the metal layer 130 consisting of a metal or an alloy different from a constituent metal of the metal electrode 120, metal wiring 140 is connected to the metal layer 130 via a bonding part 150, wherein the constituent metal of the metal layer 130 is a metal or an alloy different from the constituent metal of the metal electrode 120, and the bonding part 150 has an alloy region harder than the metal wiring 140.

Abstract: An object of the present invention is to stabilize and strengthen the strength of a bonding part between a metal electrode on a semiconductor chip and metal wiring connected thereto using a simple structure. Provided is a semiconductor device including a metal layer 130 on a surface of a metal electrode 120 formed on a semiconductor chip 110, the metal layer 130 consisting of a metal or an alloy different from a constituent metal of the metal electrode 120, metal wiring 140 is connected to the metal layer 130 via a bonding part 150, wherein the constituent metal of the metal layer 130 is a metal or an alloy different from the constituent metal of the metal electrode 120, and the bonding part 150 has an alloy region harder than the metal wiring 140.

Abstract: A semiconductor device according to the present invention, having an Au-based solder layer (3) sandwiched between a semiconductor element (1) and a Cu substrate (2) made mainly of Cu, in which the semiconductor device includes: a dense metal film (23) which is arranged between the Cu substrate (2) and the Au-based solder layer (3), and has fine slits (24) patterned to have a predetermined shape in a plan view; and fine structures (4) with dumbbell-like cross section, which have Cu and Au as main elements, and are each buried in the Cu substrate (2), the Au-based solder layer (3), and the fine slits (24) of the dense metal film (23).

Abstract: A semiconductor device according to the present invention, having an Au-based solder layer (3) sandwiched between a semiconductor element (1) and a Cu substrate (2) made mainly of Cu, in which the semiconductor device includes: a dense metal film (23) which is arranged between the Cu substrate (2) and the Au-based solder layer (3), and has fine slits (24) patterned to have a predetermined shape in a plan view; and fine structures (4) with dumbbell-like cross section, which have Cu and Au as main elements, and are each buried in the Cu substrate (2), the Au-based solder layer (3), and the fine slits (24) of the dense metal film (23).