Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LED chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with a bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.

Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LED chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with a bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.

Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LED chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with a bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.

Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LED chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with a bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.

Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LED chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with a bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.

Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LED chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with a bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.

Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LED chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with a bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.

Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LSD chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with at bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.

Abstract: A low temperature buffer layer made of GaN is formed on a sapphire substrate and an n type layer is formed thereon. An active layer is made of an InGaN based compound semiconductor. A GaN based compound semiconductor layer including an n-type layer, an active layer serving as a light emitting layer, and a p type layer are laminated on the sapphire substrate. A current diffusion film which is formed on the p-type layer for supplying the light emitting layer with a uniform current is formed of an electrically conductive metal having a high reflectance factor for light. The light emitting diode element is mounted on a circuit board so that the output light of the light emitting layer is emitted from the side of the sapphire substrate. Reflected light which is reflected on the current diffusion film is also emitted from the sapphire substrate.

Abstract: The LED element is die-bonded on the wiring pattern on the surface of the first white substrate facing to the cavity of the second white substrate by using electrically conductive materials as bonding material so that the LED element is accommodated in the cavity of the second white substrate and the p and n side electrodes on one side opposite to the light emitting surface of the sapphire substrate of the LED element are electrically connected with the through-hole conductors. The LED element which is die-bonded on the first white substrate is covered and sealed on its entire periphery with a light transmittable synthetic resin molded portion. The semiconductor light emitting device may have an enhanced light emission efficiency and can be formed in the flat form.

Abstract: In a chip-type light emitting device in which first and second terminal electrodes are formed on both ends of an insulating substrate with a light emitting device chip being mounted on the surface side, the LED chip is directly formed on the insulating substrate, and at least a portion of the insulating substrate on which the LED chip is mounted is formed by a whitish material. Alternatively, in a lamp-type semiconductor light emitting device in which the LED chip is mounted on the top of a lead, and is covered with a dome-shaped package, or in a chip-type semiconductor light emitting device, a bonding material used for bonding the LED chip is made of a whitish material. Therefore, it becomes possible to reflect light that proceeds toward the back surface side of the LED chip efficiently, and consequently to increase the necessary luminosity even if the light-emitting efficiency inside the LED chip remains the same.

Abstract: Obtained is a semiconductor light emitting device in which a light emitting device chip is bonded on a first lead and a second lead is electrically connected to one electrode of the light emitting device chip. Besides, the light emitting device chip and the top end of the second lead are enclosed by resin which a light from the light emitting device chip transmits. The first and second leads are respectively enclosed by heat resistant enclosing material along predetermined lengths of both leads at the bottom of the package, which is opposed to the light emitting surface. As a result, adhesiveness between the resin package and the leads is improved and thereby prevented is corrosion of the leads and the light emitting device chip in the package from occurring, which can make reliability improved.

Abstract: A semiconductor light emitting device incorporates therein with (a) a light emitting portion formed by semiconductor overlying layers including a first conductivity layer and a second conductivity layer in order to a light emitting layer, and (b) a protecting element portion provided in electrical connection between said first conductivity type layer and said second conductivity type layer so that said light emitting portion is protected against at least a reverse voltage applied to said light emitting portion. The light emitting portion and the protecting element portion can be formed by separate chips or in one chip having the both. They are formed into a lamp-type or chip-type light emitting device. The incorporation of the protecting element increase the reverse-voltage resistance for a compound semiconductor, such as galium-itride or the like, that is less resistive to reverse voltages applied.