Abstract: A semiconductor layer contains, as a principal constituent, a Group III-V semiconductor compound, which may be represented by the general formula: AlxGayInzN, wherein x represents a number satisfying the condition 0?x<1, y represents a number satisfying the condition 0<y<1, and z represents a number satisfying the condition 0<z<1, with the proviso that x+y+z=1. The semiconductor layer is formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.

Abstract: There is provided a laser treatment device including: an image acquisition section that acquires an image of a treatment region including a lipid component inside a living body and surroundings of the treatment region; a position acquisition section that acquires a position of the treatment region in an optical axis direction of laser light, on the basis of image data of the image acquired by the image acquisition section; an irradiation section that irradiates laser light with a wavelength from 1201 nm to 1227 nm at the treatment region from outside the body; and a focusing section that focuses the laser light irradiated from the irradiation section at the position of the treatment region acquired by the position acquisition section.

Abstract: A semiconductor layer contains, as a principal constituent, a Groups III-V semiconductor compound, which may be represented by the general formula: BxAlyGazN, wherein x represents a number satisfying the condition 0<x<1, y represents a number satisfying the condition 0?y<1, and z represents a number satisfying the condition 0<z<1, with the proviso that x+y+z=1, the semiconductor layer having been formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.

Abstract: In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less than 1% with respect to the conductive semiconductor substrate; and a second clad layer, a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer is further provided.

Abstract: A photo detecting device comprises a photo-electron generating body, which absorbs light and generates photo-electrons, and a transistor, across which an electric current flows in accordance with a quantity of the photo-electrons having been generated by the photo-electron generating body. An electrical insulator is formed on a surface of the photo-electron generating body. The transistor is provided with a source electrode and a drain electrode, which are formed on the electrical insulator having been formed on the surface of the photo-electron generating body. The source electrode and the drain electrode of the transistor are connected with each other via a channel section containing a nano-tube having electrically conductive or semi-conductive characteristics.

Abstract: A throttle control apparatus comprises a throttle valve placed in an intake passage, a motor for driving the throttle valve, an electronic control unit (ECU) for controlling the motor, and a throttle sensor for detecting an actual opening degree of the throttle valve. The ECU determines that the throttle valve is frozen when the actual opening degree does not reach a target opening degree even after a driving time for driving the motor has exceeded a predetermined time, and then stores the actual opening degree at the time as an icing opening degree. The ECU supplies a driving duty to cause the motor to produce required driving torque for removal of icing and reverses the driving duty by open control, and controls the motor to bring an accumulated value of a deviation between the target opening degree and the icing opening degree to zero, thereby repeatedly swinging the throttle valve.

Abstract: A flow control valve includes a seal member disposed within an annular space. The annular space is defined between at least one of bearing fitting portions of a flow path defining member and a corresponding valve shaft portion of a valve member opposing to each other in a radial direction with respect to an axis of the valve shaft portion and between an end face of a corresponding bearing and an end face of a valve body portion opposing to each other in a direction of the axis. The seal member can seal between the bearing fitting portion and the corresponding valve shaft portion with respect to the radial direction and can also seal between the corresponding bearing and the valve body portion with respect to the axial direction.

Abstract: In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch ?a/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, ?0.6%??a/a??0.3% and 10 nm?dw?20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc?400 ?m and Rf×Rr?0.5.

Abstract: The present invention includes a bearing fixing structure for fixing a bearing in position relative to a resin housing. The bearing is fitted into an inner circumference of the housing. The structure includes an annular holding member and an engaging device. The holding member is press-fitted into the inner circumference of the housing so as to hold the bearing from one side with respect to an axial direction of the housing for preventing the bearing from being removed from the housing. The engaging device engages an outer circumferential face of the holding member with the inner circumference of the housing with respect to the axial direction of the housing.

Abstract: The present invention includes a bearing fixing structure for fixing a bearing in position relative to a resin housing by press-fitting the bearing into a recess formed in the housing. The bearing fixing structure includes a non-contact face formed along the entire inner circumference of the recess of the housing and constructed not to contact with an outer circumferential face of the bearing. Projections are formed on the non-contact face and are arranged along the circumference of the non-contact face. Each projection extends along a press-fitting direction for the bearing, so that the projections can be crushed by the outer circumferential face of the bearing as the bearing is press-fitted into the recess. A sealing face is formed in the recess on the front side of the non-contact face with respect to the press-fitting direction, so that the entire circumference of the outer circumferential face of the bearing can closely contact with the sealing face.

Abstract: A throttle body (2) includes a resin main body (3) defining a bore (7) through which intake air flows, a valve body (60) having a shaft part (20) rotatably supported by the resin body (3) and a valve part (4) for opening and closing the bore (7) of the main body (3), and a resin cover body (40) attached to the main body (3). The cover body (4) is attached to the main body (3) by welding.

Abstract: A semiconductor layer contains, as a principal constituent, a Group III-V semiconductor compound, which may be represented by the general formula: AlxGayInzN, wherein x represents a number satisfying the condition 0?x<1, y represents a number satisfying the condition 0<y<1, and z represents a number satisfying the condition 0<z<1, with the proviso that x+y+z=1. The semiconductor layer is formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.

Abstract: A semiconductor layer contains, as a principal constituent, a Groups III-V semiconductor compound, which may be represented by the general formula: BxAlyGazN, wherein x represents a number satisfying the condition 0<x<1, y represents a number satisfying the condition 0?y<1, and z represents a number satisfying the condition 0<z<1, with the proviso that x+y+z=1, the semiconductor layer having been formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.

Abstract: In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.

Abstract: A throttle control apparatus comprises a throttle valve placed in an intake passage, a motor for driving the throttle valve, an electronic control unit (ECU) for controlling the motor, and a throttle sensor for detecting an actual opening degree of the throttle valve. The ECU determines that the throttle valve is frozen when the actual opening degree does not reach a target opening degree even after a driving time for driving the motor has exceeded a predetermined time, and then stores the actual opening degree at the time as an icing opening degree. The ECU supplies a driving duty to cause the motor to produce required driving torque for removal of icing and reverses the driving duty by open control, and controls the motor to bring an accumulated value of a deviation between the target opening degree and the icing opening degree to zero, thereby repeatedly swinging the throttle valve.

Abstract: A photo detecting device comprises a photo-electron generating body, which absorbs light and generates photo-electrons, and a transistor, across which an electric current flows in accordance with a quantity of the photo-electrons having been generated by the photo-electron generating body. An electrical insulator is formed on a surface of the photo-electron generating body. The transistor is provided with a source electrode and a drain electrode, which are formed on the electrical insulator having been formed on the surface of the photo-electron generating body. The source electrode and the drain electrode of the transistor are connected with each other via a channel section containing a nano-tube having electrically conductive or semi-conductive characteristics.

Abstract: A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the horizontal beam radiation angle of each of a plurality of the emitting regions is minimized to provide a high luminance focused beam. In a GaN system stripe type semiconductor laser, which has an index guiding structure constituted, for example, by a ridge structure formed on a p-GaN cap layer 28 and p-Al0.1Ga0.9N clad layer 27 with the width W2, and produces higher mode or multimode oscillation in the transverse mode, the effective index difference ?n between the central region of the stripe and outside of the stripe is set not greater than 1.5×10?2.

Abstract: A second-harmonic generation device includes a semiconductor laser element which has a quantum-well active layer, a wavelength control means which controls the wavelength of the light emitted from an end facet of the semiconductor laser element, an optical system which returns to the semiconductor laser element the light the wavelength of which is controlled by the wavelength control means, and a wavelength conversion element which is directly coupled to the other end facet of the semiconductor laser element, and converts the wavelength of the light controlled by the wavelength control means, to a half wavelength. The semiconductor laser element has a resonator length equal to or greater than 900 micrometers and a mirror loss equal to or greater than 16 cm?1.

Abstract: An optical waveguide member is inserted into a tubular member. The tubular member is elongated with heating and fusion-bonded to the optical waveguide member. Thus, a formed body is obtained. The formed body is cut into a predetermined length to obtain an optical waveguide member. The tubular member is preferably made of a crystallized glass with crystals deposited therein at least in the state of the formed body.

Abstract: A laser diode includes: a reflection layer, an active layer, and a corner reflector which has a shape approximately corresponding to a portion of a cone or pyramid, and is arranged above the active layer with vertex up so that the corner reflector and the reflection layer realize a resonator. An emission window is formed at a portion, containing the vertex, of the corner reflector, and has such dimensions that substantially only components of oscillated light in a fundamental transverse mode are emitted as a light beam which can propagate outside the laser diode. Instead of provision of the reflection layer, a reflection face may be formed at an end of semiconductor layers, and a corner reflector having an emission window with dimensions as above may be formed at the other end of the semiconductor layers.