Abstract: A method is provided that allows the sulfur component concentration in gasoline to be estimated to high precision. The measuring method of the disclosure is a method of measuring the concentration of sulfur components in gasoline that contains sulfur components and aromatic components. The measuring method of the disclosure comprises: (A1) removing a portion of the gasoline by gasification to lower the proportion of the aromatic component concentration with respect to the sulfur component concentration in the gasoline, (A2) measuring values related to the refractive index of the gasoline, and (A3) measuring the sulfur component concentration in the gasoline based on the values related to the refractive index.

Abstract: A method is provided that allows the sulfur component concentration in gasoline to be estimated to high precision. The measuring method of the disclosure is a method of measuring the concentration of sulfur components in gasoline that contains sulfur components and aromatic components. The measuring method of the disclosure comprises: (A1) removing a portion of the gasoline by gasification to lower the proportion of the aromatic component concentration with respect to the sulfur component concentration in the gasoline, (A2) measuring values related to the refractive index of the gasoline, and (A3) measuring the sulfur component concentration in the gasoline based on the values related to the refractive index.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.

Abstract: An electrode pad on a semiconductor substrate having a reduced capacitance of an electrode pad portion and allowing control of a characteristic impedance for a practical electrode pad size is provided.

Abstract: In an optical modulation device (10) having an electrical/optical interaction region (11), an electrical signal line (3) is connected to an electrical signal input terminal (2a), another electrical signal line (4a) is connected to an electrical signal output terminal (2b), and a reflection control circuit (5) is connected to the other electrical signal line (4a). This reflection control circuit (5) is an impedance element which positively reflects an output electrical signal from the interaction region (11) of the optical modulation device (10). This makes it possible to raise the upper-limiting frequency at which the E/O (Electrical-to-Optical) response characteristic can be improved, and improve the flatness of the frequency characteristic of the E/O response without deteriorating the absolute value of the E/O response.

Abstract: An electrode pad on a semiconductor substrate having a reduced capacitance of an electrode pad portion and allowing control of a characteristic impedance for a practical electrode pad size is provided.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.

Abstract: In a semiconductor optical modulator of this invention, each quantum-well layer and each barrier layer of a quantum-well structure serving as a light absorption layer are respectively made of In1-X-YGaXAlYN (0?X, Y?1, 0?X+Y?1) and In1-X?-Y?GaX?AlY?N (0?X?, Y??1, 0?X?+Y??1). An electric field is being generated in the light absorption layer by spontaneous polarization.

Abstract: A semiconductor photodetection device includes a light incident facet for receiving light from an optical waveguide. Light received at the light incident facet is refracted through a photo-absorption layer to register photonic events. A material may be introduced between the optical waveguide and the light incident facet to improve responsiveness of the device. The light incident facet may be at an angle to the direction of the light emitted from the optical waveguide to cause the incident light to be refracted through several layers of the semiconductor photodetection device.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor-layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.

Abstract: In a semiconductor optical modulator of this invention, each quantum-well layer and each barrier layer of a quantum-well structure serving as a light absorption layer are respectively made of In1-X-YGaXAlYN (0≦X, Y≦1, 0≦X+Y≦1) and In1-X′-Y′GaX′AlY′N (0≦X′, Y′≦1, 0≦X′+Y′≦1). An electric field is being generated in the light absorption layer by spontaneous polarization.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.

Abstract: In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate.