Abstract: In order to that stress generated within a resin can be suppressed and cracking in the resin can be prevented, an ink jet recording head comprising a substrate; a resin body, which defines an ink discharge section, formed on the substrate; and a heating resistor provided on the substrate, an ink chamber being formed between the heating resistor and the ink discharge section, the resin body being dug down along the ink chamber, is provided.

Abstract: In order to that there is no region in which an ink pools, a particle made from the ink is hardly generated, and high reliability is archived, an ink jet recording head comprising a substrate; a resin body, which defines an ink discharge section, formed on the substrate; and a heating resistor provided on the substrate, an ink chamber being formed between the heating resistor and the ink discharge section, resin parts being positioned in the resin body along the ink chamber, a material of the resin part being the same as that of the resin body, is provided.

Abstract: An image forming apparatus can form an image of a high-precision security information for anti-reproduction. A photosensitive material-coated area in a recording paper is exposed with an exposure unit to form an image of a high-precision security information. Since the image of the security information is thus formed by exposing the photosensitive material, it can be formed as an image incapable of reproduction.

Abstract: A card printer in a card information management system. The card printer has a data input part for inputting data acquired by a user. The data is character information of a character generated by a program stored in a predetermined apparatus according to predetermined operations of a user. The card printer has a user ID input part for inputting an ID of the user. The data inputted from the data input part is converted into print information by a print information generation part. Approval information of the supplier of the card is generated by an approval information generation part. This print information and the approval information are printed on a card by a print part through an image processing part and a print control part. The user can obtain the card to which the approval information is added on demand.

Abstract: A semiconductor device comprising; two rectangular semiconductor chips, each function of which is different from each other; two die pads, a plurality of leads for carrying either of the two die pads, each of the plurality of leads being supported by a lead frame and being connected to either of the two die pads; a plurality of leads for connecting either of the two semiconductor chips with any of outer connection terminals; a package in which the two semiconductor chips are encapsulated; wherein the leads for carrying are provided at larger side faces of the package and at smaller side faces of the package; and wherein each of the two die pads is supported at at least three side faces of the package.

Abstract: Disclosed is an imaging optical system and an image forming apparatus that provide a small-size design and high resolution. An optical system (telecentric optical system) between the composite focus 4d of an imaging surface side and a laser array 1 is divided into a second lens group 4b and a third lens group 4c and the distance D2 between the third lens group 4c and the laser array 1 is shortened, whereby the spread of incident light into the third lens group 4c is reduced and the aperture of the third lens 4c is reduced. Also, the principal light beam 2a of beam 2 from the laser array 1 is bent at two stages, the second lens group 4b and the third lens group 4c, and the distance D1 between the second lens group 4b and the third lens group 4c is increased, whereby the bend of the principal light beam 2a of the laser beam 2 in the second lens group 4b and the third lens group 4c is reduced, with the result that small aberration is obtained.

Abstract: An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.

Abstract: A light beam focal position detecting device for detecting the focal position of a scanning light beam to correct the focal error on the photosensitive drum surface includes a photosensor which is placed at a position on the light beam axis before or after the expected focal position and made up of a pair of rectangular opto-electric transducers having their confronting sides extending along the main scanning direction or a plurality of opto-electric transducers arrayed along the subordinate scanning direction.

Abstract: A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current of a pulse width and a duty factor meeting an inequality: .DELTA.T.sub.1 /.DELTA.T.sub.0 <1/2, where .DELTA.T.sub.0 is a temperature rise in active layers of the light-emitting points when the semiconductor laser array is driven in a continuous drive mode using a continuous current, and .DELTA.T.sub.1 is a temperature rise in the active layers of the light-emitting points when the semiconductor laser array is driven in a pulse drive mode using a pulse current. In the semiconductor laser array driving method, the plurality of light-emitting points are driven by a driving pulse current having a duty factor of 0.4 or below meeting an inequality: y<3.1 exp(-8.9x), where x is a duty factor and y is a pulse width (.mu.s).

Abstract: An optical beam recording device for performing image recording by focusing a plurality of light beams modulated according to an image signal through a focusing optical system onto a photosensitive member, including a light source having a plurality of arrayed light emitting portions for emitting the plurality of light beams; a light detecting device located at a given position for detecting a detecting light beam of the plurality of light beams; and a control device for controlling a focused condition of the plurality of light beams on the photosensitive drum according to a result of detection of the detecting light beam by the light detecting device. With this arrangement, shift of a focal position can be detected with high accuracy without increasing a response speed of the light detecting device and inviting the complication of configuration.

Abstract: A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

Abstract: A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

Abstract: In a semiconductor laser array in which a semiconductor laser element having a horizontal-direction cavity, and plural outer inclined reflecting mirrors capable of reflecting laser light projected from the semiconductor laser element along a specific direction are integrated on a semiconductor substrate in a monolithic form, these outer inclined reflecting mirrors are positioned adjacent to each other, and also are arranged in such a manner that a distance between the adjoining horizontal-direction cavities becomes longer while being located apart from said outer inclined reflecting mirrors.

Abstract: A semiconductor laser device which allows high speed correction of the position of a laser spot on an optical disk is disclosed. The semiconductor laser device comprises an active layer which oscillates a laser beam when electric current is supplied thereto, and a plurality of independent electrodes for varying the current density distribution in the active layer to vary the intensity distribution of the laser beam to be emitted from an emergent face of the semiconductor laser device. With the semiconductor laser device, by supplying electric currents individually from the plurality of independent electrodes to vary the current density distribution in the active layer, the beam spot position can be corrected within the frequency bandwidth of several tens MHz by direct modulation of the semiconductor laser device. Also a driving method for the semiconductor laser device and a tracking servo system in which the semiconductor laser device is incorporated are disclosed.

Abstract: In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof.

Abstract: The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer.

Abstract: A semiconductor laser device having an active layer which is comprised of a quantum well layer formed of a mixed crystal material, and barrier layers provided on both sides of the quantum well layer in such a manner as to sandwich the same, is characterized in that Ge is thermally diffused in a portion of the active layer to disorder the quantum well layer and the barrier layers at that portion so as to form a non-light-emitting area with a low refractive index, while the quantum well layer and the barrier layers at a portion where Ge is not diffused is formed as a refractive index waveguide which is a light-emitting area.

Abstract: The evaporator of tubular form of a diffusion-absorption type refrigerating machine has an inlet part closed off from the outside and an outlet part contiguously joined to the tubular outer wall of heat-exchanger and discharges vaporized ammonia as a refrigerant through the heat exchanger to a liquid receiver, and a tube for conducting hydrogen gas as an auxiliary gas from the top of the absorber and another tube of smaller diameter for conducting liquid ammonia from the condenser extend, either side-by-side or with the tube of smaller diameter within the other tube, through the interiors of the heat exchanger and evaporator to the inlet part, where both tubes are open-ended and discharge their respective hydrogen gas and ammonia into the interior of the evaporator at its inlet end.