Abstract: A magneto-optical trap method including applying a magnetic field to an atom encapsulated in a vacuum vessel and having a nuclear spin of not less than 3/2 by using an anti-Helmholtz coil. Then generating a laser beam including a first laser beam detuned from a first resonance frequency when the atom transits from a total angular momentum quantum number F in a ground state to a total angular momentum quantum number F?=F+1 in an excited state, and a second laser beam detuned from a second resonance frequency when the atom transits from the total angular momentum quantum number F in the ground state to a total angular momentum quantum number F?=F?1 in the excited state.

Abstract: A magneto-optical trap apparatus includes a vacuum vessel for encapsulating an atom to be trapped, an anti-Helmholtz coil for applying a magnetic field to an inside of the vacuum vessel, a laser device for generating a laser beam, and an irradiation device for irradiating the generated laser beam from a plurality of directions. The laser beam includes a first laser beam detuned from a first resonance frequency when the atom transits from a total angular momentum quantum number F in a ground state to a total angular momentum quantum number F?=F+1 in an excited state, and a second laser beam detuned from a second resonance frequency when the atom transits from the total angular momentum quantum number F in the ground state to a total angular momentum quantum number F?=F?1 in the excited state, among transitions from J=0 in a ground state to J?=1 in an excited state.

Abstract: A magneto-optical trap apparatus includes a vacuum vessel for encapsulating an atom to be trapped, an anti-Helmholtz coil for applying a magnetic field to an inside of the vacuum vessel, a laser device for generating a laser beam, and an irradiation device for irradiating the generated laser beam from a plurality of directions. The laser beam includes a first laser beam detuned from a first resonance frequency when the atom transits from a total angular momentum quantum number F in a ground state to a total angular momentum quantum number F?=F+1 in an excited state, and a second laser beam detuned from a second resonance frequency when the atom transits from the total angular momentum quantum number F in the ground state to a total angular momentum quantum number F?=F?1 in the excited state, among transitions from J=0 in a ground state to J?=1 in an excited state.

Abstract: Disclosed is a system for detecting an attack, which includes a server and a plurality of vehicles capable of wirelessly communicating with each other. Each of the vehicles has a sensor, a sensor information acquisition unit, a traffic information reception unit, and a transmission unit that transmits the sensor information and the traffic information to the server. The server has a reception unit that receives the sensor information and the traffic information from the vehicles, a verification unit that verifies whether the sensor information and the traffic information are inconsistent with each other, and a notification unit that notifies, when the sensor information and the traffic information are inconsistent with each other, the vehicles of the inconsistency.

Abstract: Disclosed is a system for detecting an attack, which includes a server and a plurality of vehicles capable of wirelessly communicating with each other. Each of the vehicles has a sensor, a sensor information acquisition unit, a traffic information reception unit, and a transmission unit that transmits the sensor information and the traffic information to the server. The server has a reception unit that receives the sensor information and the traffic information from the vehicles, a verification unit that verifies whether the sensor information and the traffic information are inconsistent with each other, and a notification unit that notifies, when the sensor information and the traffic information are inconsistent with each other, the vehicles of the inconsistency.

Abstract: Disclosed is a system for detecting an attack, which includes a server and a plurality of vehicles capable of wirelessly communicating with each other. Each of the vehicles has a sensor, a sensor information acquisition unit, a traffic information reception unit, and a transmission unit that transmits the sensor information and the traffic information to the server. The server has a reception unit that receives the sensor information and the traffic information from the vehicles, a verification unit that verifies whether the sensor information and the traffic information are inconsistent with each other, and a notification unit that notifies, when the sensor information and the traffic information are inconsistent with each other, the vehicles of the inconsistency.

Abstract: The sending server appends the serial number on the same day and the last serial number of data sent lastly on the previous day to the data and sends the data. A receiving server records the sending day and the serial number for received data, verifies the security and stores successful data of the security verification. Also it extracts the missing serial number from the serial numbers of data received on the previous day when the data takes place at the first sending on the day and makes a resending request for data related to the missing serial number to the sending server if the last serial number is unequal to the number of received data on the previous day. The sending server resends the corresponding data to the resending request to the receiving server.

Abstract: The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

Abstract: The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

Abstract: A catalytic apparatus for exhaust purification, provided in an exhaust path of an internal-combustion engine operable with at least a theoretical air-fuel ratio and a lean air-fuel ratio, is provided with a three-way catalyst (4) having an inner layer (12a) thereof mainly containing rhodium as a noble metal to be activated in an oxygen concentration lowering atmosphere and a surface layer (12b) thereof mainly containing platinum or palladium as a noble metal to be activated in an oxygen concentration increasing atmosphere. In the catalytic apparatus, platinum or palladium in the surface layer is activated in lean operation to perform an HC purifying function effectively. If oxygen is temporarily in short supply during the change from a lean air-fuel ratio of exhaust gas over to a stoichiometric air-fuel ratio, oxygen is supplemented to purify HC by utilizing the O2 storage function of platinum or palladium as the noble metal, whereby the HC purifying rate can be prevented from temporarily suddenly lowering.

Abstract: The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

Abstract: The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

Abstract: The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

Abstract: An exhaust-gas-purifying catalyst is made by depositing on a support iridium serving as a catalyst active substance, sulfur for improving the catalyst activity of iridium and, if necessary, platinum. The sulfur is preferably contained as a sulfate. The exhaust-gas-purifying process of the present invention is a process in which exhaust gas from an internal combustion engine is allowed to pass through the exhaust-gas-purifying catalyst with the exhaust-gas temperature being set in the range of 200° C. to 700° C. at the inlet of the exhaust-gas-purifying catalyst. The above-mentioned composition and process provide an activity for purifying exhaust gas, especially for eliminating nitrogen oxides in an oxidizing atmosphere, in a wide temperature range, allow high heat-resistance and durability, and consequently, are superior in practical use.

Abstract: The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

Abstract: An exhaust-gas-purifying catalyst is made by depositing on a support iridium serving as a catalyst active substance, sulfur for improving the catalyst activity of iridium and, if necessary, platinum. The sulfur is preferably contained as a sulfate. The exhaust-gas-purifying process of the present invention is a process in which exhaust gas from an internal combustion engine is allowed to pass through the exhaust-gas-purifying catalyst with the exhaust-gas temperature being set in the range of 200° C. to 700° C. at the inlet of the exhaust-gas-purifying catalyst. The above-mentioned composition and process provide an activity for purifying exhaust gas, especially for eliminating nitrogen oxides in an oxidizing atmosphere, in a wide temperature range, allow high heat-resistance and durability, and consequently, are superior in practical use.

Abstract: The invention provides a semiconductor device having a structure wherein a layer comprising at least Al.sub.W Ga.sub.1-W As is formed on a substrate and a second etching stop layer, a first etching stop layer and a layer comprising Al.sub.Y Ga.sub.1-Y As are deposited on the layer comprising Al.sub.W Ga.sub.1-W As in the described order, with a portion of the layer comprising Al.sub.Y G.sub.1-Y As and a portion of the first etching stop layer being removed. This structure enables a desired ridge shape to be fabricated with good quality and allows for free selection of the Al mixed crystal ratio of the layer to be etched, and makes it possible to form the re-growth interface of GaAs. Thus, the qualty of crystal of the re-grown portion can be improved.

Abstract: A vapor phase growth process for the fabrication of a thin film form of compound semiconductor of elements of Groups III-V, using a halogen element-free hydride and a halogen element-free organic metal as the source materials for growth, is characterized in that a halide gas and/or a halogen gas that are free from the mother elements of the compound to be grown are added to the reaction atmosphere while the compound is growing. A trace amount(s) of the halide and/or halogen gas(es) that are free from the mother elements of the compound to be grown, such as HCl, is added to the reaction atmosphere while the compound is growing, thereby making it possible to flatten the heterojunction interface or effect the growth of high-quality crystals without deposition of polycrystals on a mask over a wide range.

Abstract: The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.

Abstract: In a wide band cap semiconductor, a GaP.sub.x N.sub.1-x (0.1.ltoreq.x.ltoreq.0.9) layer is inserted between a layer comprising AlGaInN and an electrode, The potential barrier between the electrode and the surface layer can be reduced. Contact resistance can be decreased, and ohmic contact can be easily taken up.