Abstract: A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IV2 compound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.

Abstract: A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IV2 compound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.

Abstract: A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P1), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P1); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.

Abstract: Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate (1), a backside surface electrode layer (2) formed on the substrate (1), a p-type light-absorbing layer (3) formed on the backside surface electrode layer (2), and an n-type transparent conductive film (5) formed on the p-type light-absorbing layer (3). Voids (6) are formed at the interface of the backside surface electrode layer (2) and the p-type light-absorbing layer (3).

Abstract: This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500?·cm or higher.

Abstract: A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T1 for a time ?t1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T2 for a time ?t2. The temperature of the treatment object is then decreased to T3, and, at that temperature, the treatment object is held in a heated state for a time ?t3.

Abstract: In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P1), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P1); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.

Abstract: Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate (1), a backside surface electrode layer (2) formed on the substrate (1), a p-type light-absorbing layer (3) formed on the backside surface electrode layer (2), and an n-type transparent conductive film (5) formed on the p-type light-absorbing layer (3). Voids (6) are formed at the interface of the backside surface electrode layer (2) and the p-type light-absorbing layer (3).

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: In order to provide a CIS-based thin film solar cell having high photoelectric conversion efficiency, this CIS-based thin film solar cell is laminated in order of a high distortion point glass substrate (1), an alkali control layer (2), a back electrode layer (3), a p-type CIS-based light absorbing layer (4), and an n-type transparent conductive film (6), wherein said alkali control layer (2) is a silica film whose film thickness is within a range of 2.00-10.00 nm and whose refractive index is within a range of 1.450-1.500.

Abstract: In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.

Abstract: A method of manufacturing a CIS-based thin film solar cell that achieves high photoelectric conversion efficiency comprises: forming a backside electrode layer on a substrate; forming a p-type CIS-based light absorbing layer thereon; and further forming an n-type transparent and electrically conductive film. The above-mentioned forming a p-type CIS-based light absorbing layer comprises: forming a metal precursor film (30a) at least comprising a first metal layer (31, 32) containing a I group element and a second metal layer (33) containing a III group element; and selenizing and/or sulfurizing the metal precursor film, and the above-mentioned forming the metal precursor film includes forming either one of the first metal layer (31, 32) or the second metal layer (33) of at least two layers including a layer (31) that contains an alkali metal and a layer (32) that substantially does not contain the alkali metal.

Abstract: In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductor 3a and the electrode 2. The existence of the n-type semiconductor 6 allows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductor 3a and the n-type semiconductor 6 in a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.

Abstract: In a stack structure of a CIS based thin film solar cell obtained by stacking a p-type CIS light absorbing layer, a buffer layer, and an n-type transparent conductive film in that order, the buffer layer has a stack structure of two or more layers including first and second buffer layers, the first buffer layer adjoining the p-type light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), the second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, the first buffer layer has a thickness equal to or smaller than 20 nm, and the second buffer layer has a thickness equal to or larger than 100 nm

Abstract: In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Abstract: A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T1 for a time ?t1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T2 for a time ?t2. The temperature of the treatment object is then decreased to T3, and, at that temperature, the treatment object is held in a heated state for a time ?t3.

Abstract: To provide an easy-to-manufacture, high-quality photovoltaic conversion device and an optical power generator and also to provide a manufacturing method with high production efficiency.

Abstract: This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500 ?·cm or higher.