Abstract: Provided is a method of manufacturing an epitaxial wafer, which includes vapor-phase growing an epitaxial layer on a substrate W placed on a susceptor 3 in a state where an upper surface 4b1 of a lift pin 4 inserted in a through-hole H of the susceptor 3 retracts or projects with respect to an upper opening H1a of the through-hole H. A level difference D from the upper surface 4b1 of the lift pin 4 to the opening H1a of the through-hole H is measured with laser light, and outputs, during epitaxial growth, of heaters 9 located above and beneath the susceptor 3 are adjusted on the basis of the measured level difference D. Thus, a method of manufacturing an epitaxial wafer, which facilitates adjustment of the outputs of the heat sources during epitaxial growth, is provided.

Abstract: Provided is a method of manufacturing an epitaxial wafer, which includes vapor-phase growing an epitaxial layer on a substrate W placed on a susceptor 3 in a state where an upper surface 4b1 of a lift pin 4 inserted in a through-hole H of the susceptor 3 retracts or projects with respect to an upper opening H1a of the through-hole H. A level difference D from the upper surface 4b1 of the lift pin 4 to the opening H1a of the through-hole H is measured with laser light, and outputs, during epitaxial growth, of heaters 9 located above and beneath the susceptor 3 are adjusted on the basis of the measured level difference D. Thus, a method of manufacturing an epitaxial wafer, which facilitates adjustment of the outputs of the heat sources during epitaxial growth, is provided.

Abstract: Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 ?m or more in centerline average roughness Ra and a maximum height of a protrusion 13p generated in forming the coating H of 5 ?m or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.

Abstract: Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 ?m or more in centerline average roughness Ra and a maximum height of a protrusion 13p generated in forming the coating H of 5 ?m or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.

Abstract: A susceptor 1 for a gas phase growth apparatus to which a round depressed pocket 2 with a bottom a side wall is formed for the placing of a semiconductor wafer 3 wherein a protuberance 6 is provided on the circumference of the pocket at and near the position ere said semiconductor wafer touches said side wall 4 of the pocket 2 in such a way that the protuberance 6 covers a part of a chamfered area of said semiconductor wafer 3 without touching it. Thus cracks and breakage due to adhesion between a susceptor and a wafer may be prevented.