Abstract: Method and apparatus for measuring a water concentration in ammonia, comprising using ammonia having a water concentration of 10 ppm or less as a reference gas, introducing the ammonia at a constant flow rate into a multi-reflection long optical path gas cell, and measuring infrared absorption intensity of water at at least one measurement wave number in the range of from 3,500 to 4,000 cm?1, from 2,600 to 3,100 cm?1, or from 1,900 to 2,400 cm?1 at which infrared absorptions of ammonia and water do not overlap. According to the present invention, analysis of water in a low concentration range of 10 ppm or less in ammonia gas and liquefied ammonia can be performed in a simple and convenient manner.

Abstract: Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.

Abstract: Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.

Abstract: Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.

Abstract: Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.

Abstract: Method and apparatus for measuring a water concentration in ammonia, comprising using ammonia having a water concentration of 10 ppm or less as a reference gas, introducing the ammonia at a constant flow rate into a multi-reflection long optical path gas cell, and measuring infrared absorption intensity of water at at least one measurement wave number in the range of from 3,500 to 4,000 cm−1, from 2,600 to 3,100 cm−1, or from 1,900 to 2,400 cm−1 at which infrared absorptions of ammonia and water do not overlap.

Abstract: An apparatus for manufacturing information recording disks is disclosed. The apparatus includes a deposition chamber for providing an undercoat layer to a substrate to be treated, a deposition chamber for providing a magnetic recording layer on the substrate, a deposition chamber for providing a protective layer over the recording layer and a holding chamber for removing the resulting information recording disk upon completion of the process steps. The deposition chamber which provides the protective layer includes a system which selectively introduces heated plasma and oxygen into the interior of the deposition chamber to clean the interior surfaces of the chamber while the apparatus is in use. The heated plasma and oxygen interact with any excess protective layer material, resulting in the formation of a gas which is removed from the interior of the deposition chamber by a pumping system.

Abstract: An apparatus for manufacturing information recording disks is disclosed. The apparatus includes a deposition chamber for providing an undercoat layer to a substrate to be treated, a deposition chamber for providing a magnetic recording layer on the substrate, a deposition chamber for providing a protective layer over the recording layer and a holding chamber for removing the resulting information recording disk upon completion of the process steps. The deposition chamber which provides the protective layer includes a system which selectively introduces heated plasma and oxygen into the interior of the deposition chamber to clean the interior surfaces of the chamber while the apparatus is in use. The heated plasma and oxygen interact with any excess protective layer material, resulting in the formation of a gas which is removed from the interior of the deposition chamber by a pumping system.

Abstract: Disclosed is a recording medium having a surface layer containing a compound having a layer structure on the recording medium, wherein exchangeable anions are present between layers of the compound and at least a part of said exchangeable anions are monovalent anions. The recording medium has excellent ink absorption property, fixing property of coloring matters and clearness, and is capable of forming an image of excellent sharpness and water resistance.