Abstract: An aluminum-silicon carbide composite including flat-plate-shaped composited portion containing silicon carbide and an aluminum alloy, and aluminum layers containing an aluminum alloy provided on both plate surfaces of composited portion, wherein circuit board is mounted on one plate surface and the other plate surface is used as heat-dissipating surface, wherein: the heat-dissipating-surface-side plate surface of the composited portion has a convex curved shape; the heat-dissipating-surface-side aluminum layer has a convex curved shape; ratio (Ax/B) between the average (Ax) of the thicknesses at the centers on opposing short sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.91?Ax/B?1.00; and a ratio (Ay/B) between the average (Ay) of the thicknesses at the centers on opposing long sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.94?Ay/B?1.

Abstract: A power module includes a base plate, a ceramic insulating substrate bonded on the base plate, and a semiconductor element bonded on the ceramic insulating substrate, wherein a surface of the base plate on a side opposite to the ceramic insulating substrate has a warp with a convex shape, and a linear thermal expansion coefficient ?1 (×10?6/K) of the base plate and a linear thermal expansion coefficient ?2 (×10?6/K) of the ceramic insulating substrate when a temperature decreases in the range of 25° C. to 150° C. satisfy the following Expression (1).

Abstract: A ceramic circuit board includes a ceramic substrate and metal layers provided to both surfaces of the ceramic substrate and containing Al and/or Cu, wherein a measurement value ?1 of a linear thermal expansion coefficient at 25° C. to 150° C. is 5×10?6 to 9×10?6/K, a ratio ?1/?2 of the ?1 to a theoretical value ?2 of the linear thermal expansion coefficient at 25° C. to 150° C. is 0.7 to 0.95, and at least one of the metal layers forms a metal circuit.

Abstract: A power module includes a base plate, a ceramic insulating substrate bonded on the base plate, and a semiconductor element bonded on the ceramic insulating substrate, wherein a surface of the base plate on a side opposite to the ceramic insulating substrate has a warp with a convex shape, and a linear thermal expansion coefficient ?1 (×10?6/K) of the base plate and a linear thermal expansion coefficient ?2 (×10?6/K) of the ceramic insulating substrate when a temperature decreases in the range of 25° C. to 150° C. satisfy the following Expression (1).

Abstract: A ceramic circuit board includes a ceramic substrate and metal layers provided to both surfaces of the ceramic substrate and containing Al and/or Cu, wherein a measurement value ?1 of a linear thermal expansion coefficient at 25° C. to 150° C. is 5×10?6 to 9×10?6/K, a ratio ?1/?2 of the ?1 to a theoretical value ?2 of the linear thermal expansion coefficient at 25° C. to 150° C. is 0.7 to 0.95, and at least one of the metal layers forms a metal circuit.

Abstract: Provided is a heat dissipation structure for an electric circuit device excellent in mass-productivity and heat radiation performance. A heat dissipation structure for an electric circuit device, the structure including a layered structure comprising: a heatsink exposed on the electric circuit device; a thermal conductive member; and a cooler, wherein the thermal conductive member is a ceramic-resin composite in which a resin composition is impregnated in a ceramic sintered body, the ceramic sintered body comprising ceramic primary particles integrated into a three-dimensional structure, and wherein the thermal conductive member is arranged such that the thermal conductive member directly contacts with at least one of the heatsink and the cooler.

Abstract: Provided is a ceramic-resin composite body that has good mass productivity and product properties (heat dissipation properties, insulation properties and adhesive properties), and particularly a ceramic-resin composite that can dramatically improve the heat dissipation properties for electronic devices. The ceramic-resin composite body includes: 35 to 70% by volume of a sintered body having a monolithic structure in which non-oxide ceramic primary particles having an average major diameter of from 3 to 60 ?m and an aspect ratio of from 5 to 30 are three-dimensionally continuous; and 65 to 30% by volume of a thermosetting resin composition having an exothermic onset temperature of 180° C. or more and a curing rate of from 5 to 60% as determined with a differential scanning calorimeter, and having a number average molecular weight of from 450 to 4800, wherein the sintered body is impregnated with the thermosetting resin composition.

Abstract: A resin-impregnated boron nitride sintered body having superior thermal conductivity and superior strength, and a resin-impregnated boron nitride sintered body having superior conductivity and small anisotropy of thermal conductivity are provided. A resin-impregnated boron nitride sintered body, including: 30 to 90 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally; and 10 to 70 volume % of a resin; wherein the boron nitride sintered body has a porosity of 10 to 70%; the boron nitride particles of the boron nitride sintered body has an average long diameter of 10 ?m or more; the boron nitride sintered body has a graphitization index by powder X-ray diffractometry is 4.0 or less; and an orientation degree of the boron nitride particles of the boron nitride sintered body by I.O.P is 0.01 to 0.

Abstract: Provided is a heat dissipation structure for an electric circuit device excellent in mass-productivity and heat radiation performance. A heat dissipation structure for an electric circuit device, the structure including a layered structure comprising: a heatsink exposed on the electric circuit device; a thermal conductive member; and a cooler, wherein the thermal conductive member is a ceramic-resin composite in which a resin composition is impregnated in a ceramic sintered body, the ceramic sintered body comprising ceramic primary particles integrated into a three-dimensional structure, and wherein the thermal conductive member is arranged such that the thermal conductive member directly contacts with at least one of the heatsink and the cooler.

Abstract: Provided is a ceramic-resin composite body that has good mass productivity and product properties (heat dissipation properties, insulation properties and adhesive properties), and particularly a ceramic-resin composite that can dramatically improve the heat dissipation properties for electronic devices. The ceramic-resin composite body includes: 35 to 70% by volume of a sintered body having a monolithic structure in which non-oxide ceramic primary particles having an average major diameter of from 3 to 60 ?m and an aspect ratio of from 5 to 30 are three-dimensionally continuous; and 65 to 30% by volume of a thermosetting resin composition having an exothermic onset temperature of 180° C. or more and a curing rate of from 5 to 60% as determined with a differential scanning calorimeter, and having a number average molecular weight of from 450 to 4800, wherein the sintered body is impregnated with the thermosetting resin composition.

Abstract: To provide an aluminum-silicon carbide composite which is suitable for use as a power-module base plate. An aluminum-silicon carbide composite wherein a peripheral portion having, as a main component thereof, an aluminum-ceramic fiber composite containing ceramic fibers having an average fiber diameter of at most 20 ?m and an average aspect ratio of at least 100, is provided on the periphery of a flat plate-shaped aluminum-silicon carbide composite having a plate thickness of 2 to 6 mm formed by impregnating, with a metal containing aluminum, a porous silicon carbide molded body having a silicon carbide content of 50 to 80 vol %, and wherein the proportion of the aluminum-ceramic fiber composite occupied in the peripheral portion is at least 50 area %.

Abstract: A resin-impregnated boron nitride sintered body having superior thermal conductivity and superior strength, and a resin-impregnated boron nitride sintered body having superior conductivity and small anisotropy of thermal conductivity are provided. A resin-impregnated boron nitride sintered body, including: 30 to 90 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally; and 10 to 70 volume % of a resin; wherein the boron nitride sintered body has a porosity of 10 to 70%; the boron nitride particles of the boron nitride sintered body has an average long diameter of 10 ?m or more; the boron nitride sintered body has a graphitization index by powder X-ray diffractometry is 4.0 or less; and an orientation degree of the boron nitride particles of the boron nitride sintered body by I.O.P is 0.01 to 0.

Abstract: A composite production method includes impregnating a plate-shaped porous inorganic structure and a fibrous inorganic material with a metal while the fibrous inorganic material is arranged to be adjacent to the porous inorganic structure. In the composite structure, first and second phases are adjacent to each other by using a porous inorganic structure having a porous silicon carbide ceramic sintered body and the fibrous inorganic material, the first phase being a phase in which the porous silicon carbide ceramic sintered body is impregnated with the metal, the second phase being a phase in which the fibrous inorganic material is impregnated with the metal, a percentage of the porous silicon carbide ceramic sintered body in the first phase is 50 to 80 volume percent, and a percentage of the fibrous inorganic material in the second phase is 3 to 20 volume percent. A composite is produced by the method.

Abstract: There is provided a method for producing hexagonal boron nitride, including a heating step of heating a mixture containing boron carbide and an alkaline earth metal compound under an ammonia atmosphere at 1300-1500° C. to obtain a product containing hexagonal boron nitride, wherein a molar ratio of the boron carbide to the alkaline earth metal compound in the mixture is 0.5-2.0.

Abstract: A composite production method includes impregnating a plate-shaped porous inorganic structure and a fibrous inorganic material with a metal while the fibrous inorganic material is arranged to be adjacent to the porous inorganic structure. In the composite structure, first and second phases are adjacent to each other by using a porous inorganic structure having a porous silicon carbide ceramic sintered body and the fibrous inorganic material, the first phase being a phase in which the porous silicon carbide ceramic sintered body is impregnated with the metal, the second phase being a phase in which the fibrous inorganic material is impregnated with the metal, a percentage of the porous silicon carbide ceramic sintered body in the first phase is 50 to 80 volume percent, and a percentage of the fibrous inorganic material in the second phase is 3 to 20 volume percent. A composite is produced by the method.

Abstract: An aluminum-silicon carbide composite including flat-plate-shaped composited portion containing silicon carbide and an aluminum alloy, and aluminum layers containing an aluminum alloy provided on both plate surfaces of composited portion, wherein circuit board is mounted on one plate surface and the other plate surface is used as heat-dissipating surface, wherein: the heat-dissipating-surface-side plate surface of the composited portion has a convex curved shape; the heat-dissipating-surface-side aluminum layer has a convex curved shape; ratio (Ax/B) between the average (Ax) of the thicknesses at the centers on opposing short sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.91?Ax/B?1.00; and a ratio (Ay/B) between the average (Ay) of the thicknesses at the centers on opposing long sides of outer peripheral surfaces and thickness (B) at central portions of the plate surfaces satisfies the relationship: 0.94?Ay/B?1.

Abstract: [Problem] To inexpensively provide a heat dissipating component that has thermal conductivity, as well as a low specific gravity, and a coefficient of thermal expansion close to that of a ceramic substrate, and furthermore having warpage so as to be able to be joined with good closeness of contact to a heat dissipating component or the like. [Solution] A silicon carbide composite which is a plate-shaped composite formed by impregnation of a porous silicon carbide molded article by a metal having aluminum as a main component, wherein the amount of warpage with respect to 10 cm of length of the main surface of the composite is 250 ?m or less, and the amount of warpage of a power module using the plate-shaped composite is 250 ?m or less; and a heat dissipating component using the same.

Abstract: To provide an aluminum-silicon carbide composite which is suitable for use as a power-module base plate. An aluminum-silicon carbide composite wherein a peripheral portion having, as a main component thereof, an aluminum-ceramic fiber composite containing ceramic fibers having an average fiber diameter of at most 20 ?m and an average aspect ratio of at least 100, is provided on the periphery of a flat plate-shaped aluminum-silicon carbide composite having a plate thickness of 2 to 6 mm formed by impregnating, with a metal containing aluminum, a porous silicon carbide molded body having a silicon carbide content of 50 to 80 vol %, and wherein the proportion of the aluminum-ceramic fiber composite occupied in the peripheral portion is at least 50 area %.

Abstract: A resin-impregnated boron nitride sintered body having superior thermal conductivity and superior strength, and a resin-impregnated boron nitride sintered body having superior conductivity and small anisotropy of thermal conductivity are provided. A resin-impregnated boron nitride sintered body, including: 30 to 90 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally; and 10 to 70 volume % of a resin; wherein the boron nitride sintered body has a porosity of 10 to 70%; the boron nitride particles of the boron nitride sintered body has an average long diameter of 10 ?m or more; the boron nitride sintered body has a graphitization index by powder X-ray diffractometry is 4.0 or less; and an orientation degree of the boron nitride particles of the boron nitride sintered body by I.O.P is 0.01 to 0.

Abstract: Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 ?m in film thickness, (2) an Ni layer 1-5 ?m in film thickness, and (3) an Au layer 0.05-4 ?m in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.