Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25° C. of at most 50 Pa·s, an amine compound (B) having a melting point or softening point of at least 80° C., and an amine compound (C) having a melting point or softening point of less than 80° C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

Abstract: To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property. A three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(m·K) between the semiconductor substrate.

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property. A three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(m·K) between the semiconductor substrate.

Abstract: To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property, a three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(rrrK) between the semiconductor substrate.

Abstract: To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25° C. of at most 50 Pa·s, an amine compound (B) having a melting point or softening point of at least 80° C., and an amine compound (C) having a melting point or softening point of less than 80° C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property. A three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(m·K) between the semiconductor substrate.