Abstract: A method of forming a dielectric film on a Si substrate comprises the steps of adsorbing a gaseous molecular compound of a metal element constituting a dielectric material on a Si substrate, and causing a decomposition of the gaseous molecular compound thus adsorbed by a hydrolysis process or pyrolytic decomposition process or an oxidation process.

Abstract: This method for film formation has a first step of forming a first insulation film, the essential component of which is a material having a first dielectric constant, on the surface of a semiconductor substrate and a second step of forming a second insulation film, the essential component of which is a material having a second dielectric constant larger than the first dielectric constant, on the first insulation film to be thicker than this first insulation film. Since the process of forming a film of a high dielectric constant material that constitutes the second insulation film is executed successively, following the formation of a barrier layer that is the first insulation film, it is possible to form a gate of a high dielectric constant material stable to the substrate.

Abstract: A method of forming a dielectric film on a Si substrate comprises the steps of adsorbing a gaseous molecular compound of a metal element constituting a dielectric material on a Si substrate, and causing a decomposition of the gaseous molecular compound thus adsorbed by a hydrolysis process or pyrolytic decomposition process or an oxidation process.

Abstract: A stacked gate insulating film comprises a silicon oxide film and a tantalum oxide film which is stacked on the silicon oxide film and whose dielectric constant is higher than a dielectric constant of the silicon oxide film. The stacked gate insulating film is formed in accordance with the following steps. A semiconductor wafer is heated up, and the surface thereof is heat-oxidized. The silicon oxide film is formed on the semiconductor wafer (heat oxidation process). The silicon oxide film is etched back so as to be made thin (etch back process). The tantalum oxide film is stacked on the thin silicon oxide film (dielectric film formation process), thereby to form the stacked gate insulating film.

Abstract: A pretreatment chamber 120 is disposed within a vacuum transfer chamber 102 of a processing apparatus 100. The pretreatment chamber 120 is equipped with an orienting mechanism 128 and a UV lamp 124. The orienting mechanism 128 orients a wafer W through rotation of a table 130, on which the wafer W is placed, and by use of an optical sensor 134. Synchronously with the orientation, the UV lamp 124 emits UV through a UV transmission window 126 fitted to a ceiling portion of the pretreatment chamber 120, to thereby irradiate the surface of the wafer W with UV. Thus adhering to the wafer W is removed. A processing gas supplied into the pretreatment chamber 120 is also irradiated with UV. Active atoms generated from the processing gas also contribute to removal of carbon. Since the pretreatment chamber 120 is formed within the vacuum transfer chamber 102, the footprint of the processing apparatus can be reduced.