Abstract: A method of rear surface treatment is carried out by: preparing a semiconductor device in which an integrated circuit having a plurality of electrodes is provided on the front surface of a semiconductor substrate; electrically connecting the plurality of electrodes to an anode; and electropolishing the rear surface of the semiconductor substrate by performing anodic oxidation with an electrolytic solution placed in contact with the rear surface of the semiconductor substrate.

Abstract: A method of rear surface treatment is carried out by: preparing a semiconductor or device in which an integrated circuit having a plurality of electrodes is provided on the front surface of a semiconductor substrate; electrically con netting the plurality of electrodes to an anode; and electropolishing the rear surface of the semiconductor substrate by performing anodic oxidation with an electrolytic solution placed in contact with the rear surface of the semiconductor substrate.

Abstract: In evaluation and analysis of a semiconductor device using optical detection for a semiconductor chip, both front side analysis and back side analysis are enabled at low cost and a short TAT. A prober for conducting the analysis includes a board having a size equal to the size of a semiconductor wafer, a quartz plate provided in an opening of the board, and a manipulator on the board. The semiconductor chip is pushed and fixed onto a quartz plate using the pressure from a probe. During the front side analysis, the prober for conducting the analysis is mounted on a wafer stage and analysis is performed using an optical device while an electrical input is made through the probe. During the back side analysis, a removable plate is attached and the prober for conducting the analysis is turned upside down and mounted on the wafer stage. The analysis is again performed using the optical device while electrical input is made through the probe.

Abstract: In a semiconductor device having a front surface where circuits are formed and a back surface, a hemispherical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.

Abstract: In a semiconductor device having a front surface where circuits are formed and a back surface, a hemispherical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.

Abstract: In a semiconductor device having a front surface where circuits are formed and a back surface, a hemispherical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.

Abstract: In a semiconductor device having a front surface where circuits are formed and a back surface, a hemispherical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.

Abstract: In a semiconductor device having a front surface where circuits are formed and a back surface, a hemishperical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.

Abstract: The invention relates to semiconductor devices having a bipolar transistor to form an isolation area within a base electrode contact area to ensure stable contact of the base electrode. The bipolar transistor formed in the transistor area is in the form of an island and is rectangular when view from above. The isolation area is formed of a dielectric material around the transistor area, and the base area is formed around the emitter area which forms the central area of the transistor area. A contact groove is formed at the inner interface of the isolation groove which faces the outer surface of the transistor area, and a part of the base electrode is buried in the contact groove and faces at least one of the upper surface of the transistor area and an inner surface of the contact groove.

Abstract: In a semiconductor device having a front surface where circuits are formed and a back surface, a hemishperical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.

Abstract: The invention relates to semiconductor devices having a bipolar transistor to form an isolation area within a base electrode contact area to ensure stable contact of the base electrode. The bipolar transistor formed in the transistor area is in the form of an island and is rectangular when view from above. The isolation area is formed of a dielectric material around the transistor area, and the base area is formed around the emitter area which forms the central area of the transistor area. A contact groove is formed at the inner interface of the isolation groove which faces the outer surface of the transistor area, and a part of the base electrode is buried in the contact groove and faces at least one of the upper surface of the transistor area and an inner surface of the contact groove.

Abstract: The invention relates to semiconductor devices having a bipolar transistor to form an isolation area within a base electrode contact area to ensure stable contact of the base electrode. The bipolar transistor formed in the transistor area is in the form of an island and is rectangular when view from above. The isolation area is formed of a dielectric material around the transistor area, and the base area is formed around the emitter area which forms the central area of the transistor area. A contact groove is formed at the inner interface of the isolation groove which faces the outer surface of the transistor area, and a part of the base electrode is buried in the contact groove and faces at least one of the upper surface of the transistor area and an inner surface of the contact groove.

Abstract: In a method for manufacturing a bipolar transistor, a semiconductor layer having a collector region of a first conductivity type is formed, and an epitaxial semiconductor layer of a second conductivity type is grown on the semiconductor layer. Then, impurities are thermally diffused from the epitaxial semiconductor layer into the semiconductor layer. Thus, a base region is formed by the epitaxial semiconductor layer and a part of the semiconductor layer.