Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

Abstract: A vacuum processing apparatus includes a plurality of vacuum processing chambers for processing a target object using a process gas, a vacuum convey chamber, connected to the plurality of vacuum processing chambers, for loading/unloading the target object into/from the processing chambers, an opening/closing means opened/closed to cause the plurality of vacuum processing chambers to communicate with the vacuum convey chamber, and a cleaning gas supply means for supplying a cleaning gas containing ClF.sub.3 into at least one of the vacuum convey chamber and the plurality of vacuum processing chambers. The cleaning gas is supplied into the plurality of vacuum processing chambers and the vacuum convey chamber communicating with each other by opening the opening/closing means to clean the plurality of vacuum processing chambers and the vacuum convey chamber.

Abstract: A film forming apparatus includes: a chamber for housing a semiconductor wafer having a surface on which a film is to be formed, and performing a film formation process with respect to the semiconductor wafer; a process gas supply system for supplying a process gas for forming the film onto the surface of the semiconductor wafer on which the film is to be formed; a heater for heating the semiconductor wafer to decompose a film forming gas, thereby forming the film on the wafer; a purge gas supply system for supplying a purge gas from a lower surface side of the surface of the semiconductor wafer on which the film is to be formed toward a peripheral edge portion of the semiconductor wafer; and a ring member positioned at a position to cover a peripheral edge portion of the surface on which the film is to be formed when film formation is to be performed with respect to the semiconductor wafer, the ring member having an outer edge projecting from an outer edge of the target object in the film formation.

Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

Abstract: After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

Abstract: A vacuum processing apparatus includes a plurality of vacuum processing chambers for processing a target object using a process gas, a vacuum convey chamber, connected to the plurality of vacuum processing chambers, for loading/unloading the target object into/from the processing chambers, an opening/closing means opened/closed to cause the plurality of vacuum processing chambers to communicate with the vacuum convey chamber, and a cleaning gas supply means for supplying a cleaning gas containing ClF.sub.3 into at least one of the vacuum convey chamber and the plurality of vacuum processing chambers. The cleaning gas is supplied-into the plurality of vacuum processing chambers and the vacuum convey chamber communicating with each other by opening the opening/closing means to clean the plurality of vacuum processing chambers and the vacuum convey chamber.

Abstract: A processing chamber having a heating device for heating the interior thereof to a required temperature, and a holding device with at least three separate holding elements is disclosed. A processing gas feed port and processing gas passages are provided in a cap which is connected to a processing chamber and closes an opening in the upper surface of the processing chamber, and the processing gas feed port and the processing gas passages are connected by a connection pipe. The processing chamber is connected to processing gas sources and has processing gas introduction passages formed in a side wall thereof and communicated with the processing gas passages. Seal members are provided around open ends of either of the processing gas passages or the processing gas introduction passages in the surfaces of the processing chamber and the cap opposed to each other.

Abstract: Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C.

Abstract: This invention relates to a method for forming a boron-containing film of high quality on the surfaces of semiconductor wafers by CVD or epitaxial techniques using reaction gases including at least boron trifluoride.