Abstract: A finely patterned silica type ceramic film suitable as an inter-layer dielectric is formed in a short time by applying, onto a substrate, a positive working radiation sensitive polysilazane composition comprising a modified poly(sil sesquiazane) having a number average molecular weight of 100 to 100,000 and containing a basic constituent unit represented by the general formula: —[SiR6(NR7)1.5]— and other constituent units represented by the general formula: —[SiR62NR7]— and/or —[SiR63(NR7)0.5]— (R6 and R7 independently represent a hydrogen atom, a C1-3 alkyl group or a substituted or unsubstituted phenyl group) in a ratio of 0.

Abstract: A photosensitive polysilazane which may be used as a positive-tone photoresist, and a method of forming a patterned polysilazane film by use of such a composition are provided. The photosensitive polysilazane composition of the invention is characterized by comprising a polysilazane, particularly polymethylsilazane or polyphenylsilazane, and an optically acid-generating agent. The patterned polysilazane film is obtained by exposing a coating of the photosensitive polysilazane composition of the invention to light in a pattern and dissolving off the exposed portion.

Abstract: A finely patterned silica type ceramic film suitable as an inter-layer dielectric is formed in a short time by applying, onto a substrate, a positive working radiation sensitive polysilazane composition comprising a modified poly(sil sesquiazane) having a number average molecular weight of 100 to 100,000 and containing a basic constituent unit represented by the general formula: —[SiR6(NR7)1.5]— and other constituent units represented by the general formula: —[SiR62NR7]— and/or —[SiR63(NR7)0.5]— (R6 and R7 independently represent a hydrogen atom, a C1-3 alkyl group or a substituted or unsubstituted phenyl group) in a ratio of 0.

Abstract: A carbon protective film of a magnetic recording medium includes a surface region having a high nitrogen concentration. The nitrogen-doped surface region enhances surface energy and improves wettability of the protective film with a liquid lubricant. The nitrogen is implanted by plasma treatment to produce a surface region in the protective film that includes from 6 to 20 at % of nitrogen in the surface region within 30 Å from the film surface. The treatment reduces the contact angle of the film surface with water to the range from of 10 to 30 degrees.

Abstract: A method for forming dense ceramics, particularly a ceramic coating by a low temperature treatment is provided. The method for forming ceramics according to the invention is characterized in that a polysilazane having a number-average molecular weight of 100 to 50,000 or a modified polysilazane thereof is subjected to a heat treatment, then exposed to an atmosphere containing water vapor or immersed in distilled water containing a catalyst, or both, or is brought into contact with Pd.sup.2+ ions and water, the polysilazane having a skeleton comprising the unit represented by the following general formula (I): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than the above and having a carbon atom directly attached to the silicon atom, an alkylsilyl group, an alkylamino group and an alkoxy group; with the proviso that at least one of R.sup.1, R.sup.2 and R.sup.3 is a hydrogen atom.

Abstract: Disclosed are a composition for forming a ceramic material useful for smoothly forming a ceramic film at a low temperature on surfaces of solid products such as substrates used in electronic products, plastic films or the like and a process for producing such a ceramic material. The afore-mentioned composition comprises a silazane-based polymer, and at least one ceramic-transformation promoting agent selected from the group consisting of an amine compound, an acid compound and peroxide. Further, the afore-mentioned ceramic material can be produced by bringing a mixture of the silazane-based polymer and the ceramic-transformation promoting agent into contact with steam.

Abstract: A method for forming dense ceramics, particularly a ceramic coating by a low temperature treatment is provided. The method for forming ceramics according to the invention is characterized in that a polysilazane having a number-average molecular weight of 100 to 50,000 or a modified polysilazane thereof is subjected to a heat treatment, then exposed to an atmosphere containing water vapor or immersed in distilled water containing a catalyst, or both, or is brought into contact with Pd.sup.2+ ions and water, the polysilazane having a skeleton comprising the unit represented by the following general formula (I): ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than the above and having a carbon atom directly attached to the silicon atom, an alkylsilyl group, an alkylamino group and an alkoxy group; with the proviso that at least one of R.sub.1, R.sup.2 and R.sup.3 is a hydrogen atom.

Abstract: The present invention relates to a method for soldering two kinds of parts, parts with leads and chip parts, on one-side printed board, comprising coating a cream solder on a plurality of points of a wiring pattern surface of one-side printed board and coating an adhesive for adhering parts with leads on a non-wiring pattern, adhering parts with leads to said non-wiring pattern surface by said adhesive, passing leads of the parts with leads through lead insert holes of said one-side printed board to insert the same into one cream solder on the wiring pattern surface from the side of the non-wiring pattern surface, mounting chip parts on the other cream solder on said wiring pattern surface, thereafter heating at once the whole cream solder on the wiring pattern to simultaneously reflow-solder the parts with leads and chip parts whereby the parts with leads and the chip parts can be simultaneously soldered by a single reflow soldering step.