Abstract: [Object] To suppress crosstalk without reducing sensitivity.

Abstract: Provided is a photodetector that can suppress a decrease in saturation charge accumulation amount. The photodetector includes a first semiconductor layer that includes a photoelectric conversion section and that has one surface serving as a light incident surface and another surface serving as a first surface, a second semiconductor layer that is stacked on the first surface and that includes a charge accumulation region, and a gate electrode that is adjacent to the second semiconductor layer through an insulating film and that allows formation of a channel extending in a stacking direction of the first semiconductor layer and the second semiconductor layer, between the photoelectric conversion section and the charge accumulation region.

Abstract: To suppress a decrease in quantum efficiency and to suppress an increase in parasitic capacitance and dark current. A solid-state imaging element includes: a photoelectric conversion layer containing a compound semiconductor material; two semiconductor layers laminated and disposed on an opposite side of a light incident surface of the photoelectric conversion layer, the two semiconductor layers containing impurities of different conductivity types from each other; and a diffusion layer disposed in sidewalls of the photoelectric conversion layer and the two semiconductor layers, the diffusion layer containing impurities of an impurity concentration higher than that of the two semiconductor layers, in which the two semiconductor layers has a width in a plane direction excluding the diffusion layer in the sidewalls, the width being narrower than a width of the photoelectric conversion layer in a plane direction excluding the diffusion layer in the sidewall.

Abstract: There is provide a photoelectric conversion element and an imaging device, in which image quality is capable of being improved. The photoelectric conversion element includes: a photoelectric conversion layer including a compound semiconductor material; a mesa portion disposed on a part of an upper surface side of the photoelectric conversion layer and including a compound semiconductor material having band gap energy larger than the band gap energy of the photoelectric conversion layer; a first electrode disposed on the mesa portion and configured to read charge photoelectrically converted in the photoelectric conversion layer via the mesa portion; and a transfer gate disposed to face a part of the upper surface side of the photoelectric conversion layer and at least a part of a sidewall of the mesa portion.

Abstract: Provided is a solid-state imaging element that includes a photoelectric conversion layer of a first electrical conductivity type including a plurality of pixel regions, an electrode electrically coupled to the photoelectric conversion layer and provided for each of the pixel regions, a semiconductor layer provided between the electrode and the photoelectric conversion layer and having a bandgap larger than a bandgap of the photoelectric conversion layer, a diffusion part disposed in a vicinity of an edge of the pixel region and including an impurity of a second electrical conductivity type that is diffused from the semiconductor layer across the photoelectric conversion layer, and a non-diffusion part provided inside the diffusion part and not including the impurity of the second electrical conductivity type in the photoelectric conversion layer.

Abstract: A solid-state imaging element including a photoelectric conversion layer of a first electrical conductivity type including a plurality of pixel regions, an electrode electrically coupled to the photoelectric conversion layer and provided for each of the pixel regions, a semiconductor layer provided between the electrode and the photoelectric conversion layer and having a bandgap larger than a bandgap of the photoelectric conversion layer, a diffusion part disposed in a vicinity of an edge of the pixel region and including an impurity of a second electrical conductivity type that is diffused from the semiconductor layer across the photoelectric conversion layer, and a non-diffusion part provided inside the diffusion part and not including the impurity of the second electrical conductivity type in the photoelectric conversion layer.

Abstract: A light receiving element that has a structure in which p-n junctions contact the interface between a compound semiconductor material and an insulating film and that can reduce a dark current is provided. A light receiving element includes a plurality of pixels.

Abstract: A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

Abstract: A photoelectric conversion device includes: a light absorption layer that has a light entrance surface and a compound semiconductor material; a first electrode provided for each of the pixels, in opposed relation to an opposite surface to the light entrance surface; a first semiconductor layer of a first conductive type, with a bandgap energy larger than bandgap energy of the light absorption layer and that is provided between the light absorption layer and the first electrode; a second semiconductor layer of a second conductive type, with a bandgap energy larger than the bandgap energy of the light absorption layer and that is provided between the first semiconductor layer and the light absorption layer; and a first diffusion region of the second conductive type, in which the first diffusion region is provided between adjacent ones of the pixels and across the second semiconductor layer and the light absorption layer.

Abstract: A solid-state imaging element including: a photoelectric conversion layer of a first electrical conductivity type including a plurality of pixel regions; an electrode electrically coupled to the photoelectric conversion layer and provided for each of the pixel regions; a semiconductor layer provided between the electrode and the photoelectric conversion layer and having a bandgap larger than a bandgap of the photoelectric conversion layer; a diffusion part disposed in a vicinity of an edge of the pixel region and including an impurity of a second electrical conductivity type that is diffused from the semiconductor layer across the photoelectric conversion layer; and a non-diffusion part provided inside the diffusion part and not including the impurity of the second electrical conductivity type in the photoelectric conversion layer.

Abstract: A photoelectric conversion device includes: a light absorption layer that has a light entrance surface and a compound semiconductor material; a first electrode provided for each of the pixels, in opposed relation to an opposite surface to the light entrance surface, a first semiconductor layer of a first conductive type, with a bandgap energy larger than bandgap energy of the light absorption layer and that is provided between the light absorption layer and the first electrode; a second semiconductor layer of a second conductive type, with a bandgap energy larger than the bandgap energy of the light absorption layer and that is provided between the first semiconductor layer and the light absorption layer; and a first diffusion region of the second conductive type, in which the first diffusion region is provided between adjacent ones of the pixels and across the second semiconductor layer and the light absorption layer.

Abstract: A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

Abstract: A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

Abstract: A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

Abstract: A method of producing a III-V fin structure within a gap separating shallow trench isolation (STI) structures and exposing a semiconductor substrate is disclosed, the method comprising providing a semiconductor substrate, providing in the semiconductor substrate at least two identical STI structures separated by a gap exposing the semiconductor substrate, wherein said gap is bounded by said at least two identical STI structures, and, producing a III-V fin structure within said gap on the exposed semiconductor substrate, and providing a diffusion barrier at least in contact with each side wall of said at least two identical STI structures and with side walls of said III-V fin structure and wherein said semiconductor substrate is a Si substrate.

Abstract: A method of producing a III-V fin structure within a gap separating shallow trench isolation (STI) structures and exposing a semiconductor substrate is disclosed, the method comprising providing a semiconductor substrate, providing in the semiconductor substrate at least two identical STI structures separated by a gap exposing the semiconductor substrate, wherein said gap is bounded by said at least two identical STI structures, and, producing a III-V fin structure within said gap on the exposed semiconductor substrate, and providing a diffusion barrier at least in contact with each side wall of said at least two identical STI structures and with side walls of said III-V fin structure and wherein said semiconductor substrate is a Si substrate.