Abstract: A film-forming composition is characterized by containing: a triazine ring-containing hyperbranched polymer containing a repeating unit structure represented by formula (1); and a dissolution-enhancing agent for breaking a hydrogen bond formed at least within the hyperbranched polymer and/or between molecules, between a nitrogen atom in the triazine ring, and a diarylamine-derived NH group. The film-forming composition has excellent dissolvability in organic solvents such as resist solvents, and has good handling and filtration properties at low viscosity. (In the formula, R and R? each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, or an aralkyl group (however, at least one of R and R? represents a hydrogen atom); and Ar represents a divalent organic group containing an aromatic ring and/or a heterocyclic ring).

Abstract: There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

Abstract: There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

Abstract: A film-forming composition is characterized by containing: a triazine ring-containing hyperbranched polymer containing a repeating unit structure represented by formula (1); and a dissolution-enhancing agent for breaking a hydrogen bond formed at least within the hyperbranched polymer and/or between molecules, between a nitrogen atom in the triazine ring, and a diarylamine-derived NH group. The film-forming composition has excellent dissolvability in organic solvents such as resist solvents, and has good handling and filtration properties at low viscosity. (In the formula, R and R? each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, or an aralkyl group (however, at least one of R and R? represents a hydrogen atom); and Ar represents a divalent organic group containing an aromatic ring and/or a heterocyclic ring.

Abstract: A method for producing a highly branched polymer, with which a molecular weight can be controlled without using a polymerization inhibitor and a polymer having a controlled molecular weight can be produced safely even in a case of mass production in an industrial scale. A method for producing a highly branched polymer including polymerizing a monomer A having two or more radical polymerizable double bonds in a molecule, in the presence of a polymerization initiator B in an amount of 5% by mol to 200% by mol with respect to 1 mol of the monomer A at a temperature 20° C. higher than a 10-hour half-life temperature of the polymerization initiator B or higher.

Abstract: There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.

Abstract: A method for producing a highly branched polymer, with which a molecular weight can be controlled without using a polymerization inhibitor and a polymer having a controlled molecular weight can be produced safely even in a case of mass production in an industrial scale. A method for producing a highly branched polymer including polymerizing a monomer A having two or more radical polymerizable double bonds in a molecule, in the presence of a polymerization initiator B in an amount of 5% by mol to 200% by mol with respect to 1 mol of the monomer A at a temperature 20° C. higher than a 10-hour half-life temperature of the polymerization initiator B or higher.

Abstract: There is provided a method for producing a succinimide compound. The method for producing a succinimide compound of formula (3) comprises reacting an aminomalonic ester compound of formula (1) with a compound of formula (2) in a solvent in the presence of a base, wherein an alcohol is used as the solvent and an alkali metal alkoxide is used as the base. (where R1 and R4 independently represent an alkyl group having 1 to 12 carbon atom(s) which may be a straight chain, branched or cyclic, etc., R2 and R3 independently represent a hydrogen atom, etc., R5 represents an alkyl group having 1 to 12 carbon atom(s) which may be straight chain, branched or cyclic, etc.).

Abstract: There is provided a method for producing a succinimide compound. The method for producing a succinimide compound of formula (3) comprises reacting an aminomalonic ester compound of formula (1) with a compound of formula (2) in a solvent in the presence of a base, wherein an alcohol is used as the solvent and an alkali metal alkoxide is used as the base. (where R1 and R4 independently represent an alkyl group having 1 to 12 carbon atom(s) which may be a straight chain, branched or cyclic, etc., R2 and R3 independently represent a hydrogen atom, etc., R5 represents an alkyl group having 1 to 12 carbon atom(s) which may be straight chain, branched or cyclic, etc.

Abstract: A &bgr;-diketonatocopper(I) complex which contains as a ligand (L) an allene compound and is represented by formula (2) wherein, R6 and R7 may be the same or different and each represents linear or branched C1-4 alkyl, C1-4 alkoxy, or linear or branched C1-4 fluoroalkyl, R8 represents hydrogen or fluorine, and L represents the allene compound, and a process for producing the same. The complex is useful in forming a thin copper film by metal-organic vapor deposition (hereinafter abbreviated as MOCVD) method.

Abstract: A &bgr;-diketonatocopper(I) complex which contains as a ligand (L) an allene compound and is represented by formula (2) 1