Abstract: Isolation between the first path and second path is increased. A radio frequency module includes a first inductor, a second inductor, a third inductor, and a switch. The first inductor is provided in a first path through which a first communication signal travels. The second inductor is provided in a second path through which a second communication signal travels, the second path being used simultaneously with the first path. The third inductor is provided in a third path through which a third communication signal travels, the third path not being used simultaneously with the first path. The switch is provided between ground and a node in the third path and is connected to the third inductor. The third inductor is arranged between the first inductor and the second inductor.

Abstract: A rotor includes core plates, a hole, and a magnet in the hole. The core plates include a first core plate and a second core plate frontward of the first core plate. The first core plate includes a first hole, a first protrusion protruding inward of the first hole, and a first portion located in an opposite direction to a protrusion direction of the first protrusion as viewed from the axial direction and permitting deformation of the first protrusion in the opposite direction. The second core plate includes a second hole, and at least one of a recess recessed in the opposite direction and overlapping the first protrusion as viewed in the axial direction, or a second portion located in the opposite direction with respect to the first protrusion as viewed in the axial direction and permitting deformation of an inner surface of the second hole in the opposite direction.

Abstract: A rotor includes stacked core plates, a hole, and a magnet inserted into the hole. A holding core plate has a through hole as part of the hole, a protrusion protruding inwardly from an inner surface of the through hole and being in contact with the magnet, and a displacement permission portion located in an opposite direction to a protrusion direction of the protrusion and permitting displacement of the protrusion in the opposite direction. The rotor includes at least one of a magnet-side chamfered portion in which the front side edge portion of the magnet is chamfered or a protrusion-side chamfered portion in which the tip end edge portion of the protrusion is chamfered. A sum of lengths of the magnet-side and protrusion-side chamfered portions is equal to or longer than a length of the protrusion in the protrusion direction as the rotor is viewed from the axial direction.

Abstract: A glass (excluding glass used for optical elements selected from the group consisting of lenses and prisms and glass used for optical fibers) has an oxide-basis glass composition based on a mass basis of a SiO2 content of 0 to 25%, a B2O3 content of 0 to 35%, a P2O5 content of 0 to 30%, a total content of SiO2, B2O3, and P2O5 (SiO2+B2O3+P2O5) of 10 to 45%, an Al2O3 content of 0 to 15%, a Li2O content of 0 to 2%, a Na2O content of 0 to 10%, a K2O content of 0 to 10%, a Rb2O content of 0 to 5%, a Cs2O content of 0 to 5%, a total content of Li2O, Na2O, K2O, Rb2O, and Cs2O (Li2O+Na2O+K2O+Rb2O+Cs2O) of 0 to 15%, and has a wetting angle to water of 60° or more.

Abstract: A radio frequency circuit includes a substrate, a first terminal disposed on a first principal surface of the substrate, a second terminal disposed on the first principal surface, a first-surface mounted component disposed on the first principal surface or inside the substrate, and a second-surface mounted component disposed on a second principal surface of the substrate which is opposite the first principal surface. A radio-frequency signal, which is input to the first terminal, is transmitted, for output from the second terminal, so as to make at least one round trip between the first principal surface and the second-surface mounted component, which is disposed on the second principal surface, through wiring lines disposed in the substrate.

Abstract: Isolation between the first path and second path is increased. A radio frequency module includes a first inductor, a second inductor, a third inductor, and a switch. The first inductor is provided in a first path through which a first communication signal travels. The second inductor is provided in a second path through which a second communication signal travels, the second path being used simultaneously with the first path. The third inductor is provided in a third path through which a third communication signal travels, the third path not being used simultaneously with the first path. The switch is provided between ground and a node in the third path and is connected to the third inductor. The third inductor is arranged between the first inductor and the second inductor.

Abstract: A radio-frequency module includes: a module substrate having first and second main surfaces; a semiconductor IC having third and fourth main surfaces and mounted on the first main surface with the third main surface between the module substrate and the fourth main surface; and first and second electrodes extending perpendicularly to the first main surface. The cross-sectional area of the second electrodes is smaller than the cross-sectional area of the first electrodes. The semiconductor IC viewed in plan has first and second sides parallel to each other and third and fourth sides parallel to each other. The first electrodes are distributed over a first region between the first side and a side facing the first side and a second region between the second side and a side facing the second side. The second electrodes are in a third region between the third side and a side facing the third side.

Abstract: A high-frequency module includes a plurality of filters, a switch that commonly connects a plurality of paths, and a low noise amplifier that amplifies a high-frequency signal input from the plurality of filters with the switch interposed therebetween, wherein paths in which first and second filters are respectively provided among the plurality of paths connect the respective filters and the switch without connecting impedance elements, and each of the first and second filters has an output impedance located in a matching region between a NF matching impedance at which an NF of the low noise amplifier is minimum and a gain matching impedance at which a gain of the low noise amplifier is maximum in its respective pass band thereof on a Smith chart.

Abstract: An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.

Abstract: A semiconductor device includes a base, a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including plural first switches, and an amplifier unit disposed on the base, the amplifier unit including plural amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit. In plan view of the base, the first switching unit has four edges including a first edge, a second edge orthogonal to the first edge, and a third edge parallel to the first edge and orthogonal to the second edge, the amplifier unit includes a first region extending along the first edge, a second region extending along the second region, and a third region extending along the third edge, and at least one of the plural amplifier circuits is disposed in each of the first region, the second region, and the third region.

Abstract: A radio-frequency module includes: a module substrate having first and second main surfaces; a semiconductor IC having third and fourth main surfaces and mounted on the first main surface with the third main surface between the module substrate and the fourth main surface; and first and second electrodes extending perpendicularly to the first main surface. The cross-sectional area of the second electrodes is smaller than the cross-sectional area of the first electrodes. The semiconductor IC viewed in plan has first and second sides parallel to each other and third and fourth sides parallel to each other. The first electrodes are distributed over a first region between the first side and a side facing the first side and a second region between the second side and a side facing the second side. The second electrodes are in a third region between the third side and a side facing the third side.

Abstract: An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.

Abstract: An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.

Abstract: A radio frequency module includes a first receive circuit that processes a receive signal in the first frequency band. The first receive circuit includes a first substrate, a first low noise amplifier, and a first filter circuit. The first low noise amplifier is mounted on a principal surface of the first substrate. The first filter circuit is connected to an output end of the first low noise amplifier. At least a portion of the first filter circuit is provided on the principal surface of the first substrate. The first filter circuit attenuates spurious components occurring due to a transmit signal in the first frequency band received by the first low noise amplifier. The spurious components are included in the transmit signal in the first frequency band and have a frequency bandwidth that overlaps, includes, or is included in the frequency bandwidth of the receive signal in the second frequency band.

Abstract: A radio frequency circuit includes a substrate, a first terminal disposed on a first principal surface of the substrate, a second terminal disposed on the first principal surface, a first-surface mounted component disposed on the first principal surface or inside the substrate, and a second-surface mounted component disposed on a second principal surface of the substrate which is opposite the first principal surface. A radio-frequency signal, which is input to the first terminal, is transmitted, for output from the second terminal, so as to make at least one round trip between the first principal surface and the second-surface mounted component, which is disposed on the second principal surface, through wiring lines disposed in the substrate.

Abstract: A semiconductor device includes a base, a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including plural first switches, and an amplifier unit disposed on the base, the amplifier unit including plural amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit. In plan view of the base, the first switching unit has four edges including a first edge, a second edge orthogonal to the first edge, and a third edge parallel to the first edge and orthogonal to the second edge, the amplifier unit includes a first region extending along the first edge, a second region extending along the second region, and a third region extending along the third edge, and at least one of the plural amplifier circuits is disposed in each of the first region, the second region, and the third region.

Abstract: A high-frequency module (20) includes a reception-side filter (21) that uses a first frequency band as a pass band and a second frequency band as an attenuation band, an LNA (23), and a matching circuit (22) disposed between the reception-side filter (21) and the LNA (23). In a Smith chart, the matching circuit (22) makes an interval between impedance in the second frequency band of the reception-side filter (21) and a second gain circle center point indicating impedance at which gain in the second frequency band of the LNA (23) is maximized greater than an interval between impedance in the first frequency band of the reception-side filter (21) and a first gain circle center point indicating impedance at which gain in the first frequency band of the LNA (23) is maximized.

Abstract: A high-frequency module (20) includes a reception-side filter (21) that uses a first frequency band as a pass band and a second frequency band as an attenuation band, an LNA (23), and a matching circuit (22) disposed between the reception-side filter (21) and the LNA (23). In a Smith chart, the matching circuit (22) makes an interval between impedance in the second frequency band of the reception-side filter (21) and a second gain circle center point indicating impedance at which gain in the second frequency band of the LNA (23) is maximized greater than an interval between impedance in the first frequency band of the reception-side filter (21) and a first gain circle center point indicating impedance at which gain in the first frequency band of the LNA (23) is maximized.

Abstract: A radio frequency module includes a first receive circuit that processes a receive signal in the first frequency band. The first receive circuit includes a first substrate, a first low noise amplifier, and a first filter circuit. The first low noise amplifier is mounted on a principal surface of the first substrate. The first filter circuit is connected to an output end of the first low noise amplifier. At least a portion of the first filter circuit is provided on the principal surface of the first substrate. The first filter circuit attenuates spurious components occurring due to a transmit signal in the first frequency band received by the first low noise amplifier. The spurious components are included in the transmit signal in the first frequency band and have a frequency bandwidth that overlaps, includes, or is included in the frequency bandwidth of the receive signal in the second frequency band.