Abstract: A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.

Abstract: A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.

Abstract: A fast imaging device 32 has a charge signal converter 33, a charge signal accumulator 36 and a charge signal transporter 37. A charge signal accumulator 36 is provided to each charge signal converter 33. A charge signal accumulator 36 extends linearly while inclining with respect to a line L2 connecting charge signal converter 33. The other end of a charge signal accumulator 36, connected at one end thereof to a charge signal converter 33 constituting a corresponding column, merges to a charge signal transporter 37. This construction reduces noise and increases a frame rate.

Abstract: A high-speed image sensor has a plurality of signal converting means (30) for generating electric signals corresponding to an incident light intensity and a plurality of electric signal recording means (33) for recording electric signals output from corresponding signal converting means (30). The electric signal recording means (33) is linearly shaped and has a read-out line (58a) for each of longitudinal sections thereof. The read-out line (58) is used for directly reading out the electric signals out of a light receptive area.

Abstract: A fast imaging device 32 has a charge signal converter 33, a charge signal accumulator 36 and a charge signal transporter 37. One each charge signal accumulator 36 is provided to each charge signal converter 33. A charge signal accumulator 36 extends linearly while inclining with respect to a line L2 connecting charge signal converter 33. The other end of a charge signal accumulator 36, connected at one end thereof to a charge signal converter 33 constituting a corresponding column, merges to a charge signal transporter 37. This construction reduces noise and increases a frame rate.

Abstract: A solid-state image pickup device of the charge-coupled type is improved in that the width W1 (as viewed in the charge transfer direction) of each of the transfer gate electrodes for generating transfer elements in the field shift mode, the width W2 (as viewed in the charge transfer direction) of each of the transfer gate electrode for generating potential barriers also in the field shift mode are selected so as to satisfy the following formula, and a buried channel junction depth X.sub.JBC of each of the vertical charge transfer paths are selected so as to satisfy W1>W2 and/or W2>2.multidot.X.sub.JBC. In the inventive image pickup device, the charge quantity transferred is increased without impairing the vertical resolution of the device.

Abstract: A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes.

Abstract: A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes.

Abstract: A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes.

Abstract: A phase difference detection unit for an automatic focusing system of a camera or the like. The phase difference detecting unit includes a pair of linear image pickup devices which receive a pair of optical images of an object formed by the lens in the automatic focusing system of a camera or the like. The detecting unit also has a correlation operating circuit which determines whether or not the lens of the focusing system is in a proper focus condition. The proper focus condition is determined by a minimum correlation value output by the correlation operating circuit, the value being indicative of the correlation between a pair of phase shifted analog electrical signals representative of the optical images received by the pickup devices. The correlation operating circuit is capable of operation at high speed with improved accuracy by maintaining the capacitive loads of the input terminals of the correlation operating circuit.

Abstract: A solid image pickup device driving method is provided in which a charge storage type solid image pickup device of a frame transfer interline system is used to detect still picture signals. Either the odd-numbered or even-numbered field elements are transferred to charge transfer paths in a light receiving section and next transferred to a storage section. The remaining field elements are then transferred to charge transfer paths in the light receiving section. The field elemeents residing in the storage section are then transferred to a horizontal CCD for output. Finally, the remaining field elements, having been stored in the charge transfer paths in the light receiving section, are transferred to the storage section, and then transferred to the horizontal CCD for output. The driving method provides for increased vertical resolution and facilitates miniaturization of the device.

Abstract: A solid state image pickup device is provided in which a photodiode photoelectrically converts incident light to a voltage. Next a transistor performs voltage-to-current conversion, and a capacitor stores the charge. Current is stored in the capacitor without requiring the application of a reverse bias voltage to the photodiode. The voltage generated across the photodiode is logarithmically related to the quantity of incident light, and the dynamic range of the input signal to be reproduced is increased. As a result, dark current is minimized and dark current noise is reduced.

Abstract: In a complementary insulated-gate field effect transistor including insulated-gate field effect transistors of p-channel and n-channel types, a portion of the insulating material layer to be used to form the n-channel transistor is formed to be thicker than a portion thereof to be used to form the p-channel transistor, and a portion of the electrode material layer to be used to constitute the p-channel transistor is formed to be longer along the channel than a portion thereof to be used to constitute the n-channel transistor. This prevents the threshold voltage in the n-channel and p-channel transistors from scattering widely.

Abstract: A solid-state image pickup device equipped with a high-speed electronic shutter function is comprised of photoelectric transducer elements arranged in matrix form, vertical transfer routes, a horizontal transfer route, and a vertical control circuit. The vertical control circuit simultaneously shifts signal charges from the photoelectric transducer elements to the vertical transfer routes, shifts a horizontal one-row portion of the signal charges in the vertical transfer routes to the horizontal transfer route, and also alternatively selects and vertically transfers a next one-row portion of the signal charges to the horizontal transfer route. Further, the image pickup device features an exhaust drain. A vertical charge-coupled device forms the vertical transfer routes; similarly, a horizontal charge-coupled device forms the horizontal transfer route.

Abstract: In a process for fabricating a static induction transistor having a gate region which is formed in a semiconductor layer including a channel region, ions of an impurity element are implanted into the semiconductor layer from the surface thereof to form the gate region. Ions of an element lighter than the impurity element are implanted into the gate region from the surface of the semiconductor layer in such a way that the concentration of the light element exhibits a plurality of profiles in the depth direction of the semiconductor layer. The semiconductor layer is annealed at a relatively low temperature after the two implanting steps to form the gate region in the semiconductor layer. A solid-state image sensor device is fabricated by using the static induction transistor as a picture cell.