Abstract: To improve an image quality in a solid-state imaging element that performs differential amplification. A reference-side amplification transistor supplies a reference current corresponding to a predetermined reference potential. A read-side amplification transistor supplies a signal current corresponding to a difference between a potential of a gate and the reference potential from a drain to a source. A pair of reset transistors initializes the potential of the gate and the reference potential. A potential control circuit controls a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.

Abstract: To improve an image quality in a solid-state imaging element that performs differential amplification. A reference-side amplification transistor supplies a reference current corresponding to a predetermined reference potential. A read-side amplification transistor supplies a signal current corresponding to a difference between a potential of a gate and the reference potential from a drain to a source. A pair of reset transistors initializes the potential of the gate and the reference potential. A potential control circuit controls a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.

Abstract: To improve the image quality in a solid-state imaging element that performs differential amplification. Each of a plurality of reference pixels is provided with a reference-side amplifier transistor that supplies a reference current according to a predetermined reference potential. Each of a plurality of readout pixel circuits is provided with a readout-side amplifier transistor that supplies from a drain to a source a signal current according to a difference between a potential of a gate and the reference potential. Further, in a potential difference generation unit, a plurality of source follower transistors are arranged for each of columns of the readout pixel circuits, each source follower transistor controlling a potential difference between the gate and the drain to a predetermined value when the potential of the gate and the reference potential are initialized.

Abstract: To improve charge transfer efficiency in a solid-state imaging device that transfers a charge from a photoelectric conversion element to a floating diffusion layer. A solid-state imaging device is provided with a transfer transistor and a potential control unit. In this solid-state imaging device, the transfer transistor transfers a charge from a photoelectric conversion element to a floating diffusion layer in a predetermined transfer period according to a transfer signal transmitted through a predetermined transfer line. Furthermore, the potential control unit makes a potential in a transfer period of a predetermined signal line capacitively coupled with the floating diffusion layer higher than that outside the transfer period.