Patents by Inventor Hideki Nasuno
Hideki Nasuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9859099Abstract: Complex and fine patterns may be formed by an exposure apparatus that decreases movement error of a stage including a beam generating section that generates a charged particle beam, a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section, a detecting section that detects a position of the stage section, a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section, and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount.Type: GrantFiled: February 25, 2016Date of Patent: January 2, 2018Assignee: ADVANTEST CORPORATIONInventors: Akio Yamada, Masahiro Seyama, Hideki Nasuno
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Publication number: 20160314934Abstract: To use a charged particle beam to form a complex and fine pattern by decreasing movement error of a stage, provided is an exposure apparatus comprising a beam generating section that generates a charged particle beam; a stage section that has a sample mounted thereon and moves the sample relative to the beam generating section; a detecting section that detects a position of the stage section; a predicting section that generates a predicted drive amount obtained by predicting a drive amount of the stage section based on a detected position of the stage section; and an irradiation control section that performs irradiation control for irradiating the sample with the charged particle beam, based on the predicted drive amount. Also provided is an exposure method.Type: ApplicationFiled: February 25, 2016Publication date: October 27, 2016Inventors: Akio YAMADA, Masahiro SEYAMA, Hideki NASUNO
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Patent number: 8779378Abstract: There is provided an electron beam detector including an electron beam scatterer which is disposed at a predetermined distance below a shield including a plurality of openings formed therein, and a beam detection element disposed at a predetermined distance below the scatterer and configured to convert an electron beam into an electric signal. In the electron beam detector, the scatterer is disposed at an equal distance from any of the openings in the shield, and the beam detection element is disposed at an equal distance from any of the openings in the shield. Thus, the electron beam detector can suppress a variation in detection sensitivity depending on the position of the opening.Type: GrantFiled: August 15, 2013Date of Patent: July 15, 2014Assignee: Advantest Corp.Inventors: Kenji Abe, Masaki Kurokawa, Akiyoshi Tsuda, Hideki Nasuno
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Publication number: 20140061465Abstract: There is provided an electron beam detector including an electron beam scatterer which is disposed at a predetermined distance below a shield including a plurality of openings formed therein, and a beam detection element disposed at a predetermined distance below the scatterer and configured to convert an electron beam into an electric signal. In the electron beam detector, the scatterer is disposed at an equal distance from any of the openings in the shield, and the beam detection element is disposed at an equal distance from any of the openings in the shield. Thus, the electron beam detector can suppress a variation in detection sensitivity depending on the position of the opening.Type: ApplicationFiled: August 15, 2013Publication date: March 6, 2014Applicant: ADVANTEST CORPORATIONInventors: Kenji Abe, Masaki Kurokawa, Akiyoshi Tsuda, Hideki Nasuno
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Patent number: 6784426Abstract: An electron beam irradiation apparatus which irradiates an electron beam to an object for easily detecting a defect of a backscattered electron detector, including: an electron beam generating section for generating an electron beam; a plurality of backscattered electron detectors for detecting backscattered electrons generated when the electron beam is irradiated on a mark; a plurality of attenuation sections for attenuating signal values indicating quantity of backscattered electrons detected by the plurality of backscattered electron detectors; and a defect detecting section for detecting a defect of the plurality of backscattered electron detectors based on the signal values attenuated by the plurality of attenuation sections, with attenuation factors for the plurality of attenuation sections being varied.Type: GrantFiled: October 16, 2003Date of Patent: August 31, 2004Assignee: Advantest Corp.Inventors: Takayuki Sugiura, Hideki Nasuno
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Publication number: 20040079883Abstract: An electron beam irradiation apparatus which irradiates an electron beam to an object for easily detecting a defect of a backscattered electron detector, including: an electron beam generating section for generating an electron beam; a plurality of backscattered electron detectors for detecting backscattered electrons generated when the electron beam is irradiated on a mark; a plurality of attenuation sections for attenuating signal values indicating quantity of backscattered electrons detected by the plurality of backscattered electron detectors; and a defect detecting section for detecting a defect of the plurality of backscattered electron detectors based on the signal values attenuated by the plurality of attenuation sections, with attenuation factors for the plurality of attenuation sections being varied.Type: ApplicationFiled: October 16, 2003Publication date: April 29, 2004Inventors: Takayuki Sugiura, Hideki Nasuno
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Patent number: 6646275Abstract: A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: September 11, 2002Date of Patent: November 11, 2003Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Publication number: 20030025088Abstract: A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: ApplicationFiled: September 11, 2002Publication date: February 6, 2003Applicant: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 6486479Abstract: A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device; and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: June 7, 2000Date of Patent: November 26, 2002Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Publication number: 20010013581Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.Type: ApplicationFiled: April 6, 2001Publication date: August 16, 2001Inventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
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Patent number: 6242751Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.Type: GrantFiled: July 15, 1999Date of Patent: June 5, 2001Assignee: Fujitsu LimitedInventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
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Patent number: 6118129Abstract: A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of charged particle beam elements are selectively turned off in response to the first bitmap data; focusing the charged particle beam elements upon a surface of an object; and scanning the surface of the object by the charged particle beam elements; the step of shaping including the steps of: expanding pattern data of said exposure pattern into second bitmap data having a resolution of n times (n.gtoreq.2) as large as, and m times (m.gtoreq.Type: GrantFiled: April 1, 1999Date of Patent: September 12, 2000Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 5977548Abstract: A charged particle beam exposure method including steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: November 8, 1996Date of Patent: November 2, 1999Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 5969365Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.Type: GrantFiled: August 26, 1997Date of Patent: October 19, 1999Assignee: Fujitsu LimitedInventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
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Patent number: 5920077Abstract: A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device; and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: February 12, 1998Date of Patent: July 6, 1999Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 5757015Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.Type: GrantFiled: April 18, 1996Date of Patent: May 26, 1998Assignee: Fujitsu LimitedInventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
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Patent number: 5614725Abstract: A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: March 4, 1996Date of Patent: March 25, 1997Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno
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Patent number: 5528048Abstract: A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.Type: GrantFiled: March 15, 1995Date of Patent: June 18, 1996Assignee: Fujitsu LimitedInventors: Yoshihisa Oae, Tomohiko Abe, Soichiro Arai, Shigeru Maruyama, Hiroshi Yasuda, Kenichi Miyazawa, Junichi Kai, Takamasa Satoh, Keiichi Betsui, Hideki Nasuno