Patents by Inventor Hideki Nishida

Hideki Nishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11186951
    Abstract: When the efficiency of heating with steam is enhanced by adding a condensed water film formation-suppressing amine in a heating step of heating a material to be heated with the steam via a metallic material, the amount of the condensed water film formation-suppressing amine to be added is controlled based on any of the concentration of the condensed water film formation-suppressing amine in a drain, the pH of the drain, the electroconductivity of the drain, the amount of the drain, the amount of the steam, the temperature of the drain, the temperature of the metallic material, and the amount of the metallic material eluted in the drain.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: November 30, 2021
    Assignee: KURITA WATER INDUSTRIES LTD.
    Inventors: Shintaro Mori, Hideki Nishida, Shogo Ujiie, Qian Lin
  • Publication number: 20200407914
    Abstract: When the efficiency of heating with steam is enhanced by adding a condensed water film formation-suppressing amine in a heating step of heating a material to be heated with the steam via a metallic material, the amount of the condensed water film formation-suppressing amine to be added is controlled based on any of the concentration of the condensed water film formation-suppressing amine in a drain, the pH of the drain, the electroconductivity of the drain, the amount of the drain, the amount of the steam, the temperature of the drain, the temperature of the metallic material, and the amount of the metallic material eluted in the drain.
    Type: Application
    Filed: November 21, 2018
    Publication date: December 31, 2020
    Inventors: Shintaro MORI, Hideki NISHIDA, Shogo UJIIE, Qian LIN
  • Patent number: 4417323
    Abstract: A micro-pattern element has a heat discharge pattern formed on a fine line portion of a conductor pattern. Breakage caused by temperature elevation of the conductor pattern in response to the application of an electric current and resulting electromigration can be effectively prevented by the heat-discharge pattern formed on the fine line portion of the conductor pattern; thus, the reliability of the micro-pattern element can be remarkably improved.
    Type: Grant
    Filed: February 17, 1981
    Date of Patent: November 22, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Atsushi Asano, Masatoshi Takeshita, Hideki Nishida, Ryo Suzuki, Toshio Futami
  • Patent number: 4344153
    Abstract: A magnetic bubble memory device and a method of fabricating the device are disclosed in which a conductor pattern lies at least between a film for maintaining magnetic bubbles therein, and a soft magnetic material pattern. Further, the magnetic bubble memory device can be formed precisely without suffering from errors due to mask alignment, by employing a mask provided with a plurality of patterns which are different in transmittance.
    Type: Grant
    Filed: April 13, 1979
    Date of Patent: August 10, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hideki Nishida, Hirozi Yamada, Hiroshi Umezaki, Yutaka Sugita, Norikazu Tsumita
  • Patent number: 4288283
    Abstract: A method of forming a microscopic pattern wherein the object to be etched is overlaid with a film made of a material which is highly immune to etching and further provided with a reflection reducing film. Thus, the reflection of the irradiating ultraviolet rays by the underlying layer is effectively prevented.
    Type: Grant
    Filed: January 8, 1980
    Date of Patent: September 8, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Umezaki, Hideki Nishida, Norikazu Tsumita, Hirozi Yamada, Katsuhiro Kaneko, Nagatugu Koiso
  • Patent number: 4262054
    Abstract: A magnetic bubble memory device is disclosed in which a hardened film made of a heat-resisting highly-polymerized organic resin and having a predetermined thickness is employed for an insulating film interposed between a conductor pattern and a soft magnetic material pattern. In a conventional magnetic bubble memory device in which the above-mentioned insulating film is made of SiO.sub.2, an abrupt step is produced in the soft magnetic material pattern due to the existence of the conductor pattern beneath a portion of the soft magnetic material pattern, and the margin of bias magnetic field is thereby lowered. According to the present invention, the step is reduced and smoothed, and thus the lowering of the margin can be prevented.
    Type: Grant
    Filed: August 3, 1979
    Date of Patent: April 14, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Umezaki, Hideki Nishida, Hirozi Yamada, Yutaka Sugita, Katsuhiro Kaneko, Nagatugu Koiso, Masatake Takahashi, deceased
  • Patent number: 3932688
    Abstract: A polycrystalline film made of a ferromagnetic substance is deposited on a magnetic film to form a composite magnetic film. The composite magnetic film, unlike a conventional single-layered magnetic film made only of a Garnet film, is free from development of hard bubbles and has very excellent characteristics as magnetic film for use in a magnetic bubble device.
    Type: Grant
    Filed: October 12, 1973
    Date of Patent: January 13, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Yutaka Sugita, Tsutomu Kobayashi, Hideki Nishida, Masatake Takahashi