Abstract: A ring-shaped back yoke and a ring-shaped magnet are provided on a bottom surface of a ring-shaped opening part formed at a central portion of an alignment ring of a turntable part. The back yoke is provided with a protruding pawl which protrudes in a direction perpendicular to a plane of the back yoke, and the alignment ring is provided with a through hole into which the protruding pawl is inserted when mounting the back yoke to the alignment ring. The protruding pawl of the back yoke and an upper surface of a rotor frame are fixed together using an adhesive.

Abstract: A ring-shaped back yoke and a ring-shaped magnet are provided on a bottom surface of a ring-shaped opening part formed at a central portion of an alignment ring of a turntable part. The back yoke is provided with a protruding pawl which protrudes in a direction perpendicular to a plane of the back yoke, and the alignment ring is provided with a through hole into which the protruding pawl is inserted when mounting the back yoke to the alignment ring. The protruding pawl of the back yoke and an upper surface of a rotor frame are fixed together using an adhesive.

Abstract: A thin film transistor wherein at least one of (1) a gate electrode and/or a scanning line therefor and (2) source/drain electrode and/or signal lines therefor comprises a laminated wiring structure in which a main wiring layer formed of a metal selected from Al and Cu or an alloy based on the metal is sandwiched between an underlying wiring layer and an overlaying wiring layer, the underlying and overlaying wiring layers being formed of a material based on a metal or alloy of metals and containing nitrogen, the metal being selected from Ti, Mo, W, Cr, Al and Cu, and the materials used in the underlying and overlaying wiring layers being different from each other. Alternatively, the underlying and overlaying wiring layers are formed of a material based on the same metal or alloy of metals and containing nitrogen, the metal being selected from Ti, Mo, W, Cr, Al and Cu, and contents of nitrogen in the underlying and overlaying wiring layers being different from each other.