Abstract: There are provided a semiconductor device manufacturing method including: forming a film to be processed above a substrate; forming a resist layer above the film to be processed; transferring a transfer pattern to the resist layer using a reticle including the transfer pattern having a space having a width that becomes narrower than a smallest processing space width when transferred to the resist layer; performing trimming processing on the resist layer including the transfer pattern as transferred; and patterning the film to be processed using the resist layer, on which the trimming processing has been performed, as a mask.

Abstract: A method of manufacturing a semiconductor device including MOS transistors is disclosed. N-type and p-type semiconductor films are formed respectively above first and second surface regions of a semiconductor substrate. First and second protective films are laminated on the semiconductor films. The second protective film is selectively etched to form first and second patterned films. Impurities are introduced into one of the first and second patterned films. Then, surface portions of the first and second patterned films are oxidized, and the formed oxide films are etched. The first protective film is etched using the first and second patterned films as a mask. The n-type and p-type semiconductor films are etched using the remaining first protective film as a mask to form first and second gate electrodes.

Abstract: A method of manufacturing a semiconductor device including MOS transistors is disclosed. N-type and p-type semiconductor films are formed respectively above first and second surface regions of a semiconductor substrate. First and second protective films are laminated on the semiconductor films. The second protective film is selectively etched to form first and second patterned films. Impurities are introduced into one of the first and second patterned films. Then, surface portions of the first and second patterned films are oxidized, and the formed oxide films are etched. The first protective film is etched using the first and second patterned films as a mask. The n-type and p-type semiconductor films are etched using the remaining first protective film as a mask to form first and second gate electrodes.

Abstract: A method of fabricating a semiconductor device according to an embodiment of the present invention includes: forming through a first material film a second material film above a semiconductor substrate; patterning the second material film to have a predetermined pattern; trimming a width of the second material film thus patterned by performing etching; transferring a pattern of the second material film having the trimmed width on the first material film by etching the first material film; measuring a width of the first material film thus etched; and adjusting the width of the first material film to a predetermined width based on the width of the first material film thus measured.

Abstract: A method of forming a pattern, including forming first and second films, and a resist film on the second film, patterning the resist film to form a first pattern, etching the first pattern to narrow a width of the lines of the first pattern, etching the second film by using the first pattern as a mask to form a second pattern having a configuration of the first pattern transferred thereto, forming a third film above the substrate to cover the second pattern, filling a recessed portion of the third film corresponding to a gap between the lines of the second pattern with a fourth film, and removing a portion of the third film which is located on opposite sides of the fourth film, and a portion of the first film which is located below the third film to form a third pattern.

Abstract: There are provided a semiconductor device manufacturing method including: forming a film to be processed above a substrate; forming a resist layer above the film to be processed; transferring a transfer pattern to the resist layer using a reticle including the transfer pattern having a space having a width that becomes narrower than a smallest processing space width when transferred to the resist layer; performing trimming processing on the resist layer including the transfer pattern as transferred; and patterning the film to be processed using the resist layer, on which the trimming processing has been performed, as a mask.

Abstract: A method of forming a pattern, including forming first and second films, and a resist film on the second film, patterning the resist film to form a first pattern, etching the first pattern to narrow a width of the lines of the first pattern, etching the second film by using the first pattern as a mask to form a second pattern having a configuration of the first pattern transferred thereto, forming a third film above the substrate to cover the second pattern, filling a recessed portion of the third film corresponding to a gap between the lines of the second pattern with a fourth film, and removing a portion of the third film which is located on opposite sides of the fourth film, and a portion of the first film which is located below the third film to form a third pattern.

Abstract: A method of manufacturing a semiconductor device is disclosed, which comprises forming a silicon layer above a semiconductor substrate, forming a photoresist mask above the silicon layer, and dry-etching the silicon layer using the photoresist mask as an etching mask in a manner that a byproduct layer containing silicon and silicon oxide is deposited on exposed surfaces of the photoresist mask during dry-etching the silicon layer, in which a ratio of an amount of the silicon to an amount of the silicon oxide is 1 or more.