Patents by Inventor Hideki Okai

Hideki Okai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implantation method and semiconductor device manufacturing method
    Patent number: 7785994
    Abstract: In the ion implantation method and semiconductor device manufacturing method relating to the present invention, a disc on which multiple semiconductor substrates are mounted is positioned in the manner that a first angle ?1 is made between an X-Y plane perpendicular to an ion beam and a line perpendicular to the Y-axis in a disc rotation plane. In this state, an ion beam is emitted to implant a first conductivity type impurity in the semiconductor substrates while the disc is rotated about a disc rotation axis. Then, the disc is positioned in the manner that a second angle ?2 is made between the X-Y plane and a line perpendicular to the Y-axis in the disc rotation plane. In this state, an ion beam is emitted to implant a second conductivity type impurity in the semiconductor substrates while the disc is rotated about the disc rotation axis.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: August 31, 2010
    Assignee: Panasonic Corporation
    Inventor: Hideki Okai
  • ION IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    Publication number: 20090029535
    Abstract: In the ion implantation method and semiconductor device manufacturing method relating to the present invention, a disc on which multiple semiconductor substrates are mounted is positioned in the manner that a first angle ?1 is made between an X-Y plane perpendicular to an ion beam and a line perpendicular to the Y-axis in a disc rotation plane. In this state, an ion beam is emitted to implant a first conductivity type impurity in the semiconductor substrates while the disc is rotated about a disc rotation axis. Then, the disc is positioned in the manner that a second angle ?2 is made between the X-Y plane and a line perpendicular to the Y-axis in the disc rotation plane. In this state, an ion beam is emitted to implant a second conductivity type impurity in the semiconductor substrates while the disc is rotated about the disc rotation axis.
    Type: Application
    Filed: July 25, 2008
    Publication date: January 29, 2009
    Inventor: Hideki OKAI