Abstract: An inductive load drive device for driving an inductive load shortens the attenuation time of the regenerative current produced in the inductive load without increasing capacitance between the power supply and ground. A drive signal generating unit produces a drive signal denoting a logic level of the drive state and regeneration state. A drive unit is controlled based on the drive signal to an OFF state, a high resistance ON state having a high ON resistance, or a low resistance ON state having a low ON resistance, to produce the drive power. The drive unit has a high potential side switching unit group and a low potential side switching unit group. In the regeneration state either the high potential side switching unit group or the low potential side switching unit group is OFF and at least one switching unit of the other switching unit group is on.

Abstract: An active diode including a NMOS transistor having a source terminal, a drain terminal, a gate terminal and a back gate terminal, where the source terminal is connected to the back gate terminal and forms the anode terminal of the active diode, and the drain terminal forms the cathode terminal of the active diode. The active diode further includes an offset bias voltage source having a first terminal and a second terminal; and an amplifier having a non-inverting input terminal and an inverting input terminal, and an output terminal, where the inverting input terminal is connected to the drain terminal of the transistor, the non-inverting input terminal is connected to the first terminal of the offset bias source, the output terminal is connected to the gate terminal of the transistor, and the second terminal of the offset bias source is connected to the source terminal of the transistor.

Abstract: In a semiconductor device in which a control circuit region and a power transistor region are formed, a first dummy region is formed between a ground side transistor composing a push-pull circuit and the control circuit region while a second dummy region is formed between the ground side transistor and the end part of a semiconductor substrate. The first and second dummy regions have a conductive type different from that of the semiconductor substrate. The second dummy region is connected electrically to a part of the semiconductor substrate between the ground side transistor and the first dummy region.

Abstract: A switching power supply circuit attaining high power conversion efficiency and a low operation start lower-limit voltage is provided.

Abstract: A magnetic disk drive drives a switch and supplies induced power of a motor to an actuator to retract a magnetic head, if a power supply voltage is judged as being below a predetermined level. The switch is driven using an output voltage of a step-up circuit. The step-up circuit operates from before the power supply voltage drops below the predetermined level, so that the switch can be driven immediately. This makes it possible to efficiently supply the induced power to the actuator.

Abstract: In a semiconductor device in which a control circuit region and a power transistor region are formed, a first dummy region is formed between a ground side transistor composing a push-pull circuit and the control circuit region while a second dummy region is formed between the ground side transistor and the end part of a semiconductor substrate. The first and second dummy regions have a conductive type different from that of the semiconductor substrate. The second dummy region is connected electrically to a part of the semiconductor substrate between the ground side transistor and the first dummy region.

Abstract: A switching power supply circuit attaining high power conversion efficiency and a low operation start lower-limit voltage is provided.

Abstract: An active diode including a NMOS transistor having a source terminal, a drain terminal, a gate terminal and a back gate terminal, where the source terminal is connected to the back gate terminal and forms the anode terminal of the active diode, and the drain terminal forms the cathode terminal of the active diode. The active diode further includes an offset bias voltage source having a first terminal and a second terminal; and an amplifier having a non-inverting input terminal and an inverting input terminal, and an output terminal, where the inverting input terminal is connected to the drain terminal of the transistor, the non-inverting input terminal is connected to the first terminal of the offset bias source, the output terminal is connected to the gate terminal of the transistor, and the second terminal of the offset bias source is connected to the source terminal of the transistor.

Abstract: When overvoltage absorption device (3) is disposed so as to surround the periphery of a bonding pad (1) and electrostatically induced overvoltage is applied to a bonding pad section (1A), an overvoltage absorption device (3) is made electrically conductive and absorbs the overvotlage over the entire wiring path connecting the bonding pad (1) and a to-be protected circuit (2). With such configuration, the to-be protected circuit can be protected from electrostatic breakdown, regardless of the wiring direction from the bonding pad section to the to-be protected circuit, and each bonding pad section can be formed as a cell when mask designing is conducted.

Abstract: A magnetic disk drive drives a switch and supplies induced power of a motor to an actuator to retract a magnetic head, if a power supply voltage is judged as being below a predetermined level. The switch is driven using an output voltage of a step-up circuit. The step-up circuit operates from before the power supply voltage drops below the predetermined level, so that the switch can be driven immediately. This makes it possible to efficiently supply the induced power to the actuator.