Abstract: A first MR sensor and a second MR sensor are a combination of a first magnetic resistance effect element pattern and a second magnetic resistance effect element pattern. The first MR sensor and the second MR sensor are disposed a prescribed distance apart such that, when the first MR sensor receives the greatest quantity of the magnetic field component of a magnet oriented parallel to the axial direction of a piston, the second MR sensor receives the greatest quantity of the magnetic field component of a magnet oriented parallel to the radial direction of the piston.

Abstract: Provided are processes for producing high-purity succinic acid from a succinic-acid-containing liquid through crystallization.

Abstract: Provided are processes for producing high-purity succinic acid from a succinic-acid-containing liquid through crystallization.

Abstract: A manufacturing method of an optical element is provided, the optical element comprising: a shield part formed by a light shielding film formed and patterned on a substrate; a light transmission part formed by partially exposing a surface of the substrate; and a phase shifter part formed by partially etching the surface of the substrate, the method comprising the steps of: preparing an optical element blank with the light shielding film and a first resist film laminated on the substrate in this order; and forming a first resist pattern by applying drawing and development to the first resist film, covering a formation scheduled area of the shield part, and demarcating the formation scheduled area of the phase shifter part.

Abstract: A manufacturing method of an optical element is provided, the optical element comprising: a shield part formed by a light shielding film formed and patterned on a substrate; a light transmission part formed by partially exposing a surface of the substrate; and a phase shifter part formed by partially etching the surface of the substrate, the method comprising the steps of: preparing an optical element blank with the light shielding film and a first resist film laminated on the substrate in this order; and forming a first resist pattern by applying drawing and development to the first resist film, covering a formation scheduled area of the shield part, and demarcating the formation scheduled area of the phase shifter part.

Abstract: A light-shielding layer over a transparent substrate is processed into a predetermined pattern by first etching and then a recess is formed in an underlying layer below the light-shielding layer by second etching using at least the light-shielding layer as a mask. Subsequently, a defect inspection of the recess is performed. If, as a result of the inspection, a residue defect is detected at the recess otherwise formed in the underlying layer below the light-shielding layer, defect portion data of a pattern of a region including a residue-defect portion is produced and a repairing resist pattern is formed on the light-shielding layer based on the defect portion data. Then, third etching is applied to the underlying layer below the light-shielding layer using the light-shielding layer and the repairing resist pattern as a mask, thereby repairing the residue-defect portion.

Abstract: A light-shielding film pattern 2a having a main opening 5 and auxiliary openings 6 is formed in a first process and, then, recess etching of a transparent substrate (formation of a substrate etched portion 8) is performed in a second process. Thus, the main opening and auxiliary openings can be simultaneously exposed in the first process and the positioning accuracy of them becomes excellent. Patterning of a light-shielding film 2 is performed by the use of an etching mask layer 3a and therefore the processing accuracy of the light-shielding film becomes excellent. The etching mask layer 3a is removed in a third process as the final process and thus the light-shielding film pattern 2a can be protected by the etching mask layer 3a upon recess-etching the transparent substrate in the second process. Thus, it is possible to prevent damage to the light-shielding film pattern 2a in the recess etching of the transparent substrate.

Abstract: A phase shift mask manufacturing method comprises the steps of processing a light-shielding layer over a transparent substrate into a predetermined light-shielding pattern, forming a resist film on the predetermined light-shielding pattern, performing writing on the resist film based on writing data and developing the resist film, thereby forming a resist pattern, and etching an underlying layer using the predetermined light-shielding pattern and the resist pattern as a mask, thereby forming recesses, that serve as phase shift portions, in the underlying layer. The writing data includes a portion where pattern data corresponding to at least the two recesses adjacent to each other through a light-shielding portion in the predetermined light-shielding pattern are combined into one pattern data.

Abstract: Ethylene carbonate having a highly reduced content of especially diols is provided. A process for purifying ethylene carbonate, including falling crude ethylene carbonate crystals from an upper portion of a tower, melting the crude ethylene carbonate crystal in a bottom portion of the tower, withdrawing a part of the obtained melt from the tower, and flowing the remainder of the obtained melt as a reflux liquid upward for countercurrent contact with the falling crude ethylene carbonate crystals, characterized in that a solid-liquid countercurrent contact region maintained at a constant temperature is formed.

Abstract: A first photomask 1 has a first transfer pattern to be transferred onto an object and is adapted to be used in combination with a second photomask having a second transfer pattern to be transferred onto the object. Among pattern defects 4 and 5 generated in the first transfer pattern, defect correction is performed only for the pattern defect 4 which is to be transferred onto the object within a region out of an area where a pattern corresponding to the first transfer pattern is not formed on the object as a result of transferring the second transfer pattern.

Abstract: A phase shift mask manufacturing method comprises the steps of processing a light-shielding layer over a transparent substrate into a predetermined light-shielding pattern, forming a resist film on the predetermined light-shielding pattern, performing writing on the resist film based on writing data and developing the resist film, thereby forming a resist pattern, and etching an underlying layer using the predetermined light-shielding pattern and the resist pattern as a mask, thereby forming recesses, that serve as phase shift portions, in the underlying layer. The writing data includes a portion where pattern data corresponding to at least the two recesses adjacent to each other through a light-shielding portion in the predetermined light-shielding pattern are combined into one pattern data.

Abstract: A light-shielding layer over a transparent substrate is processed into a predetermined pattern by first etching and then a recess is formed in an underlying layer below the light-shielding layer by second etching using at least the light-shielding layer as a mask. Subsequently, a defect inspection of the recess is performed. If, as a result of the inspection, a residue defect is detected at the recess otherwise formed in the underlying layer below the light-shielding layer, defect portion data of a pattern of a region including a residue-defect portion is produced and a repairing resist pattern is formed on the light-shielding layer based on the defect portion data. Then, third etching is applied to the underlying layer below the light-shielding layer using the light-shielding layer and the repairing resist pattern as a mask, thereby repairing the residue-defect portion.

Abstract: A light-shielding film pattern 2a having a main opening 5 and auxiliary openings 6 is formed in a first process and, then, recess etching of a transparent substrate (formation of a substrate etched portion 8) is performed in a second process. Thus, the main opening and auxiliary openings can be simultaneously exposed in the first process and the positioning accuracy of them becomes excellent. Patterning of a light-shielding film 2 is performed by the use of an etching mask layer 3a and therefore the processing accuracy of the light-shielding film becomes excellent. The etching mask layer 3a is removed in a third process as the final process and thus the light-shielding film pattern 2a can be protected by the etching mask layer 3a upon recess-etching the transparent substrate in the second process. Thus, it is possible to prevent damage to the light-shielding film pattern 2a in the recess etching of the transparent substrate.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.