Abstract: A first vector predictor candidate list generating unit generates a first motion vector predictor candidate list from motion vectors of encoded neighboring blocks to blocks to be encoded. A second vector predictor candidate list generating unit generates a second motion vector predictor candidate list from motion vectors of blocks at the same positions as the blocks to be encoded in an encoded image and neighboring blocks to the blocks at the same positions. A combination determining unit determines whether to generate a third vector predictor candidate list combining the first and second vector predictor candidate lists by comparison of a block size of the blocks to be encoded and a threshold size. A vector predictor candidate list deciding unit generates the third vector predictor candidate list from the first vector predictor candidate list.

Abstract: In the present invention, a first circuit pattern 3 composing a semiconductor element is formed on the front side of a substrate 1, a first insulating layer 2 is formed on the first circuit pattern 3, solder electrodes 5 for external connection are formed on the first insulating layer 2, a second insulating layer 6 is formed on the backside of the substrate 1, a second circuit pattern 7 is formed on the second insulating layer 6, through vias 8 are formed to connect the first circuit pattern 3 and the second circuit pattern 7, chip passive components 9 are placed on the second circuit pattern 7, and the backside of the substrate is integrally molded with epoxy resin 10 such that the epoxy resin 10 covers the chip passive components 9.

Abstract: The electronic component integrated module includes a wiring board; an electronic component provided on the wiring board; solder for electrically connecting the electronic component onto the wiring substrate; and an encapsulating resin for encapsulating the electronic component and the solder. The average linear thermal expansion coefficient ? of the encapsulating resin, which is calculated by using the glass transition temperature of the encapsulating resin, a linear thermal expansion coefficient ?1 obtained at a temperature lower than the glass transition temperature, a linear thermal expansion coefficient ?2 obtained at a temperature exceeding the glass transition temperature, room temperature, and a peak temperature of reflow packaging of the electronic component integrated module, is not less than 17×10?6/° C. and not more than 110×10?6/° C.

Abstract: The present invention provides a semiconductor device that can suppresses poor connection caused by the variation of the heights of bumps during reflow heating, can be applied to a narrow array pitch, and can freely adjust the heights of the bumps.

Abstract: In a module with embedded electronic components, connection electrodes are formed on the component mounting surface of a substrate. The electrode portions of each of the electronic components are placed on the individual connection electrodes and connected in fixed relation thereto by using a solder. The electronic components are encapsulated in an encapsulating resin.

Abstract: In a module with embedded electronic components, connection electrodes are formed on the component mounting surface of a substrate. The electrode portions of each of the electronic components are placed on the individual connection electrodes and connected in fixed relation thereto by using a solder. The electronic components are encapsulated in an encapsulating resin.

Abstract: In a module with embedded electronic components, connection electrodes are formed on the component mounting surface of a substrate. The electrode portions of each of the electronic components are placed on the individual connection electrodes and connected in fixed relation thereto by using a solder. The electronic components are encapsulated in an encapsulating resin.

Abstract: The present invention provides a semiconductor device that can suppresses poor connection caused by the variation of the heights of bumps during reflow heating, can be applied to a narrow array pitch, and can freely adjust the heights of the bumps.

Abstract: In the present invention, a first circuit pattern 3 composing a semiconductor element is formed on the front side of a substrate 1, a first insulating layer 2 is formed on the first circuit pattern 3, solder electrodes 5 for external connection are formed on the first insulating layer 2, a second insulating layer 6 is formed on the backside of the substrate 1, a second circuit pattern 7 is formed on the second insulating layer 6, through vias 8 are formed to connect the first circuit pattern 3 and the second circuit pattern 7, chip passive components 9 are placed on the second circuit pattern 7, and the backside of the substrate is integrally molded with epoxy resin 10 such that the epoxy resin 10 covers the chip passive components 9.

Abstract: The electronic component integrated module includes a wiring board; an electronic component provided on the wiring board; solder for electrically connecting the electronic component onto the wiring substrate; and an encapsulating resin for encapsulating the electronic component and the solder. The average linear thermal expansion coefficient ? of the encapsulating resin, which is calculated by using the glass transition temperature of the encapsulating resin, a linear thermal expansion coefficient ?1 obtained at a temperature lower than the glass transition temperature, a linear thermal expansion coefficient ?2 obtained at a temperature exceeding the glass transition temperature, room temperature, and a peak temperature of reflow packaging of the electronic component integrated module, is not less than 17×106/° C. and not more than 110×10?6/° C.

Abstract: In a module with embedded electronic components, connection electrodes are formed on the component mounting surface of a substrate. The electrode portions of each of the electronic components are placed on the individual connection electrodes and connected in fixed relation thereto by using a solder. The electronic components are encapsulated in an encapsulating resin.

Abstract: In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

Abstract: In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

Abstract: One side of a ceramic multilayer board is attached to a resin film with adhesive, the resin film is mounted on a mold for resin sealing having a cavity provided in desired position, the position of the board is controlled by pressing against a portion of the resin film by a portion of the mold for sealing, and thereafter sealing is conducted by filling an epoxy resin into the cavity. The thus prepared semiconductor device has a rear face on which electrodes for connecting to outside are exposed, and the sealing resin is formed so as to be flush with respect to the rear face of the board, surround the periphery of the board, and form a cross section in a rectangular shape. With this configuration, the semiconductor device free from a crack can be sealed with resin.

Abstract: In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

Abstract: A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

Abstract: A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

Abstract: A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

Abstract: The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate having circuit patterns on opposed surfaces. The high thermo conductive ceramic substrate has on one surface a first circuit board of at least one layer having a first cavity structure, and on the other surface a second circuit board of at least one layer having a second cavity structure. A first active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode is integrated with the surface of the second circuit board, and the first circuit board surface is equipped with a cap or sealed with resin.

Abstract: The present invention provides a semiconductor device comprising as a core substrate a high thermo conductive ceramic substrate having circuit patterns on opposed surfaces. The high thermo conductive ceramic substrate has on one surface a first circuit board of at least one layer having a first cavity structure, and on the other surface a second circuit board of at least one layer having a second cavity structure. A first active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the first cavity, a second active element is mounted on the circuit pattern on the high thermo conductive ceramic substrate within the second cavity, an external electrode is integrated with the surface of the second circuit board, and the first circuit board surface is equipped with a cap or sealed with resin.