Abstract: Provided is a photo-curable nanoimprint composition that has excellent properties in terms of etching resistance, dispersibility, and productivity. In addition, the photo-curable nanoimprint composition enables easy transcription of patterns even when a mold is pressed with a relatively low pressure. The photo-curable nanoimprint composition includes: (A) partial hydrolysate obtained by hydrolyzing a mixture of an organic silicon compound and a silicon compound containing (meth)acrylic groups with water in the molar amount of not less than 0.1 times but less than 1.0 times with respect to the number of moles of all alkoxy groups present in the mixture; (B) polymerizable monomer containing (meth)aclyic groups; and (C) pothopolymerization initiator. In addition, the mixture of partial hydrolysate (A) may include further partial hydrolysate of fluorinated silicone compound and/or metal oxide.

Abstract: The present invention provides a method for manufacturing a silicon substrate having texture structure, by which, in comparison with conventional methods, it is possible to reduce manufacturing step and form easily regular texture structure on silicon substrate surface. The method of the present invention comprises the steps of: (A) forming a pattern on the silicon substrate using a resin-comprising composition; (B) irradiating an etching gas to the silicon substrate surface other than the pattern portion; and (C) processing the silicon substrate irradiated with the etching gas with an alkaline etching fluid to form concave structure under the pattern portion. Furthermore, the present invention provides a resin-comprising composition usable in the method, in particular, a composition comprising photo-curable resin.

Abstract: The present invention provides a method for manufacturing a silicon substrate having texture structure, by which, in comparison with conventional methods, it is possible to reduce manufacturing step and form easily regular texture structure on silicon substrate surface. The method of the present invention comprises the steps of: (A) forming a pattern on the silicon substrate using a resin-comprising composition; (B) irradiating an etching gas to the silicon substrate surface other than the pattern portion; and (C) processing the silicon substrate irradiated with the etching gas with an alkaline etching fluid to form concave structure under the pattern portion. Furthermore, the present invention provides a resin-comprising composition usable in the method, in particular, a composition comprising photo-curable resin.

Abstract: Provided is a photo-curable nanoimprint composition that has excellent properties in terms of etching resistance, dispersibility, and productivity. In addition, the photo-curable nanoimprint composition enables easy transcription of patterns even when a mold is pressed with a relatively low pressure. The photo-curable nanoimprint composition includes: (A) partial hydrolysate obtained by hydrolyzing a mixture of an organic silicon compound and a silicon compound containing (meth)acrylic groups with water in the molar amount of not less than 0.1 times but less than 1.0 times with respect to the number of moles of all alkoxy groups present in the mixture; (B) polymerizable monomer containing (meth)aclyic groups; and (C) pothopolymerization initiator. In addition, the mixture of partial hydrolysate (A) may include further partial hydrolysate of fluorinated silicone compound and/or metal oxide.

Abstract: Disclosed is a photocurable composition for imprint which has good pattern-transferring property and good detachability from mold (pattern formation surface) regardless of the type of polymerizable monomer to be used, whereby it is possible to form a pattern having a shape with excellent reproducibility; and a method for forming a pattern on a substrate by photoimprint using the composition. The photocurable composition for imprint includes (A) polymerizable monomer having (meth)acrylic group, (B) photoinitiator, and (C) hyperbranched polymer obtained by polymerizing polymerizable monomer having (meth)acrylic group. Preferably, the composition includes 0.1-10 parts by mass of the photoinitiator (B) and 0.1-10 parts by mass of the hyperbranched polymer (C) relative to 100 parts by mass of the polymerizable monomer (A).

Abstract: An aluminum nitride sinter includes aluminum nitride crystal grains and a grain boundary phase derived from a sintering aid. In any cross section in a surface region extending up to 100 ?m from the surface of the sinter, the proportion of the area of a grain boundary phase having a circumscribed circle diameter of 1 ?m or less to the total area of the grain boundary phase is at least 50%, and the average grain diameter of the aluminum nitride crystal grains is in the range of 3.0 to 7.0 ?m. This aluminum nitride sinter can be produced from an aluminum nitride slurry having a specific grain size distribution, an aluminum nitride green object having a specific submerged density, or an aluminum nitride degreased object having a specific pore diameter.

Abstract: Provided are a gas-barrier film which is a laminate comprising a substrate layer comprising a thermoplastic resin film and a gas-barrier layer comprising a hydrolysate of a silicon alkoxide, a stratified silicate and a polyvinyl alcohol base resin, wherein a radius (Rg) of gyration of a scattering matter which is measured by light scattering in the gas-barrier layer described above is 2.4 ?m or less, and the silicon alkoxide and/or the hydrolysate thereof are present between the layers of the stratified silicate present in the above gas-barrier layer. The above film shows an excellent gas-barrier property even under such a high humidity as exceeding 90% RH.

Abstract: Provided are a gas-barrier film which is a laminate comprising a substrate layer comprising a thermoplastic resin film and a gas-barrier layer comprising a hydrolysate of a silicon alkoxide, a stratified silicate and a polyvinyl alcohol base resin, wherein a radius (Rg) of gyration of a scattering matter which is measured by light scattering in the gas-barrier layer described above is 2.4 &mgr;m or less, and the silicon alkoxide and/or the hydrolysate thereof are present between the layers of the stratified silicate present in the above gas-barrier layer. The above film shows an excellent gas-barrier property even under such a high humidity as exceeding 90% RH.

Abstract: A gas-barrier material comprising polyvinyl alcohol type resin, silicon alkoxide hydrolyzate and polyethylene oxide is provided. As a gas-barrier film prepared by laminating a gas-barrier layer comprising said gas-barrier material on a thermoplastic resin film and a gas-barrier film prepared by laminating a gas-barrier layer comprising said gas-barrier material on one surface of a thermoplastic resin film and by laminating a sealing layer on the surface of the gas-barrier layer at the opposite side to the surface on which the thermoplastic resin film is laminated are excellent in film appearance and show excellent gas-barrier properties even under high humidity, they can be used favorably as film for wrapping.