Abstract: To provide a surface emitting laser capable of reducing both series resistance and optical loss. A surface emitting laser according to the present technology includes: a first structure including a first reflector; a second structure that includes a second reflector and is stacked on the first structure; and an active layer disposed between the first and second structures, and a current injection layer is provided in a range in which a light intensity is 1/10 times or more and ? times or less a peak intensity at least inside the first reflector and/or the second reflector. According to the surface emitting laser according to the present technology, it is possible to provide a surface emitting laser capable of reducing both series resistance and optical loss.

Abstract: Provided is a semiconductor laser element according to the present technology that includes a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

Abstract: The present technology provides a surface emitting laser device capable of reducing resistance. The present technology provides a surface emitting laser device including: a first wiring group including a plurality of first wiring lines insulated from each other; a second wiring group including a plurality of second wiring lines insulated from each other; a first board provided with a plurality of light emitting units electrically connected to any one of the plurality of first wiring lines and electrically connected to any one of the plurality of second wiring lines; and a second board disposed to face the first board and provided with the first wiring group and/or the second wiring group.

Abstract: A semiconductor laser according to one embodiment of the present disclosure includes: a first semiconductor layer of a first conductivity type; an active layer; and a second semiconductor layer of a second conductivity type stacked on the first semiconductor layer with the active layer interposed therebetween, and provided with a strip-shaped ridge. The semiconductor laser further includes: a pair of resonator end faces facing each other across the ridge; and an electrode layer electrically coupled to an upper surface of the ridge.

Abstract: This foundation construction method for a building includes: a first step for creating a foundation base; a second step for installing reinforcement on the foundation base; a third step for installing a frame for creating a foundation to be provided to the foundation base; a fourth step for arranging a plurality of anchors so as to follow the inner periphery of the frame; and a fifth step for placing concrete inside the frame. In the fifth step, the concrete is leveled such that the upper surface of the concrete is the same height as the upper end surface of the frame.

Abstract: Provided are a purification method for a polyarylene sulfide (PAS) that can efficiently reduce the amount of a carboxyalkylamino group-containing compound in the PAS by treating the carboxyalkylamino group-containing compound in the PAS under a low pressure without using a strong acid, and a production method for a PAS having a reduced amount of the carboxyalkylamino group-containing compound in the PAS. The purification method for a PAS includes: a step of obtaining a crude PAS-containing mixture by removing a solvent from a crude reaction product containing the PAS obtained by reacting a polyhalo aromatic compound with a sulfidizing agent in an organic polar solvent; a step of bringing the crude PAS mixture into contact with water and an oxygen atom-containing solvent to convert the crude PAS into porous particles; and a step of bringing the obtained porous particles into contact with carbonated water.

Abstract: This anchor support tool supports an anchor provided in a foundation, the anchor support tool comprising: a support plate having at least one support part for supporting an anchor; a spacer for positioning the support plate with respect to a form of the foundation in the height direction; and a fixing jig for fixing the support plate to the form. The fixing jig supports the support plate while the support plate is disposed above the form with the spacer therebetween.

Abstract: Provided is a laser element that includes a first semiconductor layer, a second semiconductor layer, an active layer, and an electron barrier layer. The first semiconductor layer includes a group iii nitride semiconductor having a first conductive type. The second semiconductor layer includes a group iii nitride semiconductor having a second conductive type. The electron barrier layer is between the active layer and the second semiconductor layer and includes a group iii nitride semiconductor having a composition ratio of Al larger than that of the second semiconductor layer. The electron barrier layer has a recessed and projecting shape on a surface of the electron barrier layer. The recessed and projecting shape has a height difference, between a projecting portion and a recessed portion in a direction perpendicular to a layer surface direction, that is 2 nm or more and less than 10 nm.

Abstract: An anchor support member supports an anchor bolt provided to the foundation of a building, and comprises: an attaching part that is attached to a formwork of the foundation; a retaining part that is connected to the attaching part and retains the anchor bolt; and a securing part that secures the attaching part to the formwork. The securing part secures the attaching part to the formwork such that the position of the anchor support member can be adjusted in a prescribed direction.

Abstract: A surface emitting laser having an isotropically selectively oxidized oxidation confinement layer is provided. The surface emitting laser according to the present technology includes: a first multilayer film reflector; a second multilayer film reflector; an active layer disposed between the first and second multilayer film reflectors; and an oxidation confinement layer disposed between the second multilayer film reflector and the resonator and having a non-oxidized region and an oxidized region, in which the oxidation confinement layer includes an oxidation adjustment structure. According to the surface emitting laser according to the present technology, it is possible to provide a surface emitting laser having an isotropically selectively oxidized oxidation confinement layer.

Abstract: A semiconductor laser including: a stacked body in which a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided between the first cladding layer and the second cladding layer are stacked on a semiconductor substrate; and a ridge part provided as a projection structure extending in one direction at a top surface in a stacking direction of the stacked body, in which the stacked body is provided to have both end surfaces in the extending direction of the ridge part that each have a shape including an arc in a plan view of the stacked body from the top surface.

Abstract: For example, the effective light-emitting area of a light-emitting part is maximized as much as possible. A light-emitting device including a unit structure formed by a plurality of units of emission, wherein the unit of emission includes a first structure including a first multilayer mirror, a second structure including a second multilayer mirror, and an active layer disposed between the first structure and the second structure, the unit structure includes a first electrode electrically connected between the first structures of the different units of emissions and a second electrode electrically connected between the second structures of different units of emission, and the number of combination of the first electrode and the second electrode connected to the predetermined unit of emission in the predetermined unit structure is one.

Abstract: The surface-emitting laser according to the present technique includes a first structure including a first reflector, a second structure including a second reflector, and an active layer disposed between the first and second structures. An electrode is provided within the first structure. According to the surface-emitting laser of the present technique, a surface-emitting laser capable of reducing series resistance without requiring the formation of a mesa can be provided.

Abstract: Provided is a surface emitting laser capable of increasing the size of a light emitting portion while curbing an increase in size as a whole. A surface emitting laser according to the present technology includes: a first structure that includes a first multilayer reflector; a second structure that includes a second multilayer reflector; an active layer that is disposed between the first and second structures; a first electrode that is electrically connected to the first structure; and a second electrode that is electrically connected to the second structure, and the first and second electrodes are provided in the second structure in a state where the first and second electrodes are insulated from each other. According to the surface emitting laser of the present technology, it is possible to provide a surface emitting laser capable of increasing the size of a light emitting portion while curbing an increase in size as a whole.

Abstract: A protection system includes: a first positive terminal; a second positive terminal; a first relay configured to be opened and closed by contact and separation of a first contact portion and a second contact portion; and a fuse.

Abstract: Provided is a surface emitting laser element capable of suppressing an increase in driving voltage for switching a surface emitting laser regardless of the size of a light emitting region. The present technology provides a surface emitting laser element including: a first structure including a first multilayer film reflector; a second structure including a second multilayer film reflector; and a resonator disposed between the first and second structures, in which the resonator includes an active layer in which at least a light emitting region is disposed between the first and second multilayer film reflectors, and the second structure is provided with a field effect transistor that controls injection of a current into the light emitting region.

Abstract: This anchor support tool supports an anchor provided in a foundation, the anchor support tool comprising: a support plate having at least one support part for supporting an anchor; a spacer for positioning the support plate with respect to a form of the foundation in the height direction; and a fixing jig for fixing the support plate to the form. The fixing jig supports the support plate while the support plate is disposed above the form with the spacer therebetween.

Abstract: This foundation construction method for a building includes: a first step for creating a foundation base; a second step for installing reinforcement on the foundation base; a third step for installing a frame for creating a foundation to be provided to the foundation base; a fourth step for arranging a plurality of anchors so as to follow the inner periphery of the frame; and a fifth step for placing concrete inside the frame. In the fifth step, the concrete is leveled such that the upper surface of the concrete is the same height as the upper end surface of the frame.

Abstract: A semiconductor laser including: a stacked body in which a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided between the first cladding layer and the second cladding layer are stacked on a semiconductor substrate; and a ridge part provided as a projection structure extending in one direction at a top surface in a stacking direction of the stacked body, in which the stacked body is provided to have both end surfaces in the extending direction of the ridge part that each have a shape including an arc in a plan view of the stacked body from the top surface.