Abstract: A semiconductor device includes a source electrode pad formed to a front surface of a semiconductor chip and a metal clip (metal plate) to which a lead is electrically connected. The metal clip includes a chip-connecting portion electrically connected to the source electrode pad via a conductive bonding material, a lead-connecting portion electrically connected to the lead via a conductive bonding material, and an intermediate portion positioned between the chip-connecting portion and the lead-connecting portion. Further, between the intermediate portion and the chip-connecting portion, a step portion, which has shear surfaces disposed to face each other, is provided interposing a joining portion.

Abstract: A semiconductor device includes a source electrode pad formed to a front surface of a semiconductor chip and a metal clip (metal plate) to which a lead is electrically connected. The metal clip includes a chip-connecting portion electrically connected to the source electrode pad via a conductive bonding material, a lead-connecting portion electrically connected to the lead via a conductive bonding material, and an intermediate portion positioned between the chip-connecting portion and the lead-connecting portion. Further, between the intermediate portion and the chip-connecting portion, a step portion, which has shear surfaces disposed to face each other, is provided interposing a joining portion.

Abstract: A semiconductor device includes a source electrode pad formed to a front surface of a semiconductor chip and a metal clip (metal plate) to which a lead is electrically connected. The metal clip includes a chip-connecting portion electrically connected to the source electrode pad via a conductive bonding material, a lead-connecting portion electrically connected to the lead via a conductive bonding material, and an intermediate portion positioned between the chip-connecting portion and the lead-connecting portion. Further, between the intermediate portion and the chip-connecting portion, a step portion, which has shear surfaces disposed to face each other, is provided interposing a joining portion.

Abstract: A semiconductor device includes a source electrode pad formed to a front surface of a semiconductor chip and a metal clip (metal plate) to which a lead is electrically connected. The metal clip includes a chip-connecting portion electrically connected to the source electrode pad via a conductive bonding material, a lead-connecting portion electrically connected to the lead via a conductive bonding material, and an intermediate portion positioned between the chip-connecting portion and the lead-connecting portion. Further, between the intermediate portion and the chip-connecting portion, a step portion, which has shear surfaces disposed to face each other, is provided interposing a joining portion.

Abstract: A semiconductor device includes a semiconductor chip having a current path between a first principal surface and a second principal surface opposite from the first principal surface, a first conductive frame having an opposite region to the first principal surface, and a second conductive frame electrically connected via electrical connection member to a pad formed on the second principal surface. In a gap between the first principal surface and the first conductive frame, there are arranged multiple column-shaped lead-free solders which are arranged within a circle drawn around a center of the opposite region and having a diameter corresponding to a narrow side of the opposite region, and which electrically connects the first conductive frame with the semiconductor chip, and a filler which is filled between the multiple column-shaped lead-free solders.

Abstract: A semiconductor device includes a semiconductor chip having a current path between a first principal surface and a second principal surface opposite from the first principal surface, a first conductive frame having an opposite region to the first principal surface, and a second conductive frame electrically connected via electrical connection member to a pad formed on the second principal surface. In a gap between the first principal surface and the first conductive frame, there are arranged multiple column-shaped lead-free solders which are arranged within a circle drawn around a center of the opposite region and having a diameter corresponding to a narrow side of the opposite region, and which electrically connects the first conductive frame with the semiconductor chip, and a filler which is filled between the multiple column-shaped lead-free solders.

Abstract: A semiconductor flat package device capable of attaining a favorable operation and ensuring a sufficient spreading quality of solder for the lead top end is provided. A semiconductor chip 1 is encapsulated by an encapsulation resin. At first, a lead is half-blanked on the side of the top end of the lead protruding from the encapsulation region in the direction from the soldering surface to the printed circuit board, thereby forming a half-blanked region. Then, a plating layer is formed to the half-blanked region of the lead. Then, the lead is cut from the upper end of the half-blanked region formed with the plating layer in the direction from the soldering surface. The half-blanked region and the lead cut region form the top end face of the lead which forms a pseudo-planar face. Thus, a plating layer of a sufficient area is formed stably to the top end face of the lead. As a result, a solder fillet of a sufficient height is formed stably at the top end face of the lead.