Abstract: There is provided a manufacturing method including: forming a molded body element with a molding material containing a ceramic powder and a binder; forming a ceramic molded body by disposing at least one molded body element in a mold and then injecting a molding material containing a ceramic powder and a binder into the mold and graft molding a graft molded body element to the molded body element; and forming a ceramic sintered body by degreasing and sintering the ceramic molded body. A graft connecting surface of the molded body element to which the graft molded body element is graft molded is formed so as to have a surface roughness of 2 ?m or more in terms of Ra.

Abstract: A ceramic core includes sintered ceramic powder and a hole opening on a surface of the ceramic core and having an opening portion with a maximum size of 100 ?m or less. A manufacturing method for a ceramic core includes: preparing an injection molding composition by mixing ceramic powder and a binder; manufacturing a ceramic compact by performing the injection molding of the injection molding composition; and manufacturing a ceramic core by sintering the ceramic compact, wherein cumulative percentage of coarse powder with a particle diameter of more than 50 ?m included in the ceramic powder is 30% or less on an integrated volume particle size distribution curve of the ceramic powder.

Abstract: The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.

Abstract: A ceramic core is obtained by firing a mixture that contains 0.1-15.0% by mass of alumina and 0.005-0.1% by mass of potassium and/or sodium with the balance made up of silica and unavoidable impurities. Not less than 90% by mass of amorphous silica is contained in 100% by mass of the silica. A method for producing a ceramic core, wherein: a blended material is obtained by blending 25-45% by volume of a binder into 55-75% by volume of a mixture that is obtained by mixing alumina, potassium and/or sodium, and silica so as to have the above-mentioned composition; the blended material is injected into a die so as to obtain a molded body; and the molded body is degreased at 500-600° C. for 1-10 hours, and then fired at 1,200-1,400° C. for 1-10 hours.

Abstract: There is provided a manufacturing method including: forming a molded body element with a molding material containing a ceramic powder and a binder; forming a ceramic molded body by disposing at least one molded body element in a mold and then injecting a molding material containing a ceramic powder and a binder into the mold and graft molding a graft molded body element to the molded body element; and forming a ceramic sintered body by degreasing and sintering the ceramic molded body. A graft connecting surface of the molded body element to which the graft molded body element is graft molded is formed so as to have a surface roughness of 2 ?m or more in terms of Ra.

Abstract: There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ?Vth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Abstract: The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.

Abstract: There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ?Vth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Abstract: There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ?Vth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Abstract: A ceramic core is obtained by firing a mixture that contains 0.1-15.0% by mass of alumina and 0.005-0.1% by mass of potassium and/or sodium with the balance made up of silica and unavoidable impurities. Not less than 90% by mass of amorphous silica is contained in 100% by mass of the silica. A method for producing a ceramic core, wherein: a blended material is obtained by blending 25-45% by volume of a binder into 55-75% by volume of a mixture that is obtained by mixing alumina, potassium and/or sodium, and silica so as to have the above-mentioned composition; the blended material is injected into a die so as to obtain a molded body; and the molded body is degreased at 500-600° C. for 1-10 hours, and then fired at 1,200-1,400° C. for 1-10 hours.

Abstract: A ceramic core includes sintered ceramic powder and a hole opening on a surface of the ceramic core and having an opening portion with a maximum size of 100 ?m or less. A manufacturing method for a ceramic core includes: preparing an injection molding composition by mixing ceramic powder and a binder; manufacturing a ceramic compact by performing the injection molding of the injection molding composition; and manufacturing a ceramic core by sintering the ceramic compact, wherein cumulative percentage of coarse powder with a particle diameter of more than 50 ?m included in the ceramic powder is 30% or less on an integrated volume particle size distribution curve of the ceramic powder.

Abstract: There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ?Vth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Abstract: A composite material having a high thermal conductivity and a small thermal expansion coefficient, which is obtained by impregnating a porous graphitized extrudate with a metal; the composite material having such anisotropy that the thermal conductivity and the thermal expansion coefficient are 250 W/mK a more and less than 4×10?6/K, respectively, in an extrusion direction; and that the thermal conductivity and the thermal expansion coefficient are 150 W/mK or more and 10×10?6/K or less, respectively, in a direction perpendicular to the extrusion direction.

Abstract: A composite material having a high thermal conductivity and a small thermal expansion coefficient, which is obtained by impregnating a porous graphitized extrudate with a metal; the composite material having such anisotropy that the thermal conductivity and the thermal expansion coefficient are 250 W/mK a more and less than 4×10?6/K, respectively, in an extrusion direction; and that the thermal conductivity and the thermal expansion coefficient are 150 W/mK or more and 10×10?6/K or less, respectively, in a direction perpendicular to the extrusion direction.

Abstract: An oxide semiconductor target of a ZTO (zinc tin complex oxide) type oxide semiconductor material of an appropriate (Zn/(Zn+Sn)) composition having high mobility and threshold potential stability and with less restriction in view of the cost and the resource and with less restriction in view of the process, and an oxide semiconductor device using the same, in which a sintered Zn tin complex oxide with a (Zn/(Zn+Sn)) composition of 0.6 to 0.8 is used as a target, the resistivity of the target itself is at a high resistance of 1 ?cm or higher and, further, the total concentration of impurities is controlled to 100 ppm or less.

Abstract: A graphite-particles-dispersed composite produced by compacting graphite particles coated with a high-thermal-conductivity metal such as silver, copper and aluminum, the graphite particles having an average particle size of 20-500 ?m, the volume ratio of the graphite particles to the metal being 60/40-95/5, and the composite having thermal conductivity of 150 W/mK or more in at least one direction.

Abstract: A composite material having a high thermal conductivity and a small thermal expansion coefficient, which is obtained by impregnating a porous graphitized extrudate with a metal; the composite material having such anisotropy that the thermal conductivity and the thermal expansion coefficient are 250 W/mK or more and less than 4×10?6/K, respectively, in an extrusion direction; and that the thermal conductivity and the thermal expansion coefficient are 150 W/mK or more and 10×10?6/K or less, respectively, in a direction perpendicular to the extrusion direction.

Abstract: Densified zinc oxide ceramics can be obtained so that transparent electrodes with good characteristics can be obtained using the ceramics as a sputtering target. This manufacturing method is used to manufacture the zinc oxide ceramics doped with Al in ZnO. This method comprises, calcination powder production process by which calcination powder is produced after blending Al2O3 powder and a 1st ZnO powder and by calcinating them, and sintering process by which said zinc oxide ceramics are manufactured after sintering formed body composed of powder before the sintering which is made by blending said calcination powder and a 2nd ZnO powder. Here, the ceramics are manufactured not by sintering a formed body composed of Al2O3 powder and ZnO powder, but by sintering the formed body composed of the calcination powder containing ZnAl2O4 phase and ZnO powder.

Abstract: A graphite-particles-dispersed composite produced by compacting graphite particles coated with a high-thermal-conductivity metal such as silver, copper and aluminum, the graphite particles having an average particle size of 20-500 ?m, the volume ratio of the graphite particles to the metal being 60/40-95/5, and the composite having thermal conductivity of 150 W/mK or more in at least one direction.

Abstract: A composite material having a high thermal conductivity and a small thermal expansion coefficient, which is obtained by impregnating a porous graphitized extrudate with a metal; the composite material having such anisotropy that the thermal conductivity and the thermal expansion coefficient are 250 W/mK a more and less than 4×10?6/K, respectively, in an extrusion direction; and that the thermal conductivity and the thermal expansion coefficient are 150 W/mK or more and 10×10?6/K or less, respectively, in a direction perpendicular to the extrusion direction.