Patents by Inventor Hideko Inoue

Hideko Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250098523
    Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
    Type: Application
    Filed: September 27, 2024
    Publication date: March 20, 2025
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Satoshi SEO, Nobuharu OHSAWA, Satoko SHITAGAKI, Hideko INOUE, Hiroshi KADOMA, Harue OSAKA, Kunihiko SUZUKI, Yasuhiko TAKEMURA
  • Publication number: 20250098516
    Abstract: As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a ?-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R1 to R4 each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.
    Type: Application
    Filed: December 3, 2024
    Publication date: March 20, 2025
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko INOUE, Tomoya YAMAGUCHI, Hiromi SEO, Satoshi SEO, Kunihiko SUZUKI, Miki KANAMOTO
  • Patent number: 12239010
    Abstract: A novel organometallic complex with high reliability is provided. A light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer. The light-emitting layer contains an organometallic complex. The organometallic complex includes a first ligand and a second ligand which are coordinated to a central metal. The HOMO is distributed over the first ligand, and the LUMO is distributed over the second ligand. The first ligand and the second ligand are cyclometalated ligands.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: February 25, 2025
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Hideko Inoue, Miki Kurihara, Yui Yamada, Tatsuyoshi Takahashi, Hiromitsu Kido
  • Publication number: 20250063937
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. Alight-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Application
    Filed: July 29, 2024
    Publication date: February 20, 2025
    Inventors: Satoko SHITAGAKI, Satoshi SEO, Nobuharu OHSAWA, Hideko INOUE, Kunihiko SUZUKI
  • Publication number: 20250048926
    Abstract: Alight-emitting element having high emission efficiency is provided. A light-emitting element having a low driving voltage is provided. A novel compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. A novel compound with a benzofuropyrimidine skeleton is provided. Also provided is a light-emitting element which includes the compound with the benzofuropyrimidine skeleton between a pair of electrodes.
    Type: Application
    Filed: August 15, 2024
    Publication date: February 6, 2025
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko INOUE, Miki Kanamoto, Hiromi Seo, Satoshi Seo, Tatsuyoshi Takahashi, Tomoka Nakagawa
  • Patent number: 12167675
    Abstract: As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a ?-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R1 to R4 each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: December 10, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko Inoue, Tomoya Yamaguchi, Hiromi Seo, Satoshi Seo, Kunihiko Suzuki, Miki Kanamoto
  • Patent number: 12150325
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Grant
    Filed: September 25, 2023
    Date of Patent: November 19, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Masahiro Takahashi, Kunihiko Suzuki
  • Patent number: 12127479
    Abstract: To provide a light-emitting element with an improved reliability, a light-emitting element with a high current efficiency (or a high quantum efficiency), and a novel dibenzo[f,h]quinoxaline derivative that is favorably used in a light-emitting element which is one embodiment of the present invention. A light-emitting element includes an EL layer between an anode and a cathode. The EL layer includes a light-emitting layer; the light-emitting layer contains a first organic compound having an electron-transport property and a hole-transport property, a second organic compound having a hole-transport property, and a light-emitting substance; the combination of the first organic compound and the second organic compound forms an exciplex; the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound; and a difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is less than or equal to 0.4 eV.
    Type: Grant
    Filed: October 19, 2023
    Date of Patent: October 22, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Takao Hamada, Tatsuyoshi Takahashi, Yasushi Kitano, Hiroki Suzuki, Hideko Inoue
  • Patent number: 12108658
    Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
    Type: Grant
    Filed: November 15, 2022
    Date of Patent: October 1, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo, Nobuharu Ohsawa, Satoko Shitagaki, Hideko Inoue, Hiroshi Kadoma, Harue Osaka, Kunihiko Suzuki, Yasuhiko Takemura
  • Patent number: 12100795
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: September 24, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 12069951
    Abstract: A light-emitting element having high emission efficiency is provided. A light-emitting element having a low driving voltage is provided. A novel compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. A novel compound with a benzofuropyrimidine skeleton is provided. Also provided is a light-emitting element which includes the compound with the benzofuropyrimidine skeleton between a pair of electrodes.
    Type: Grant
    Filed: March 2, 2023
    Date of Patent: August 20, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko Inoue, Miki Kanamoto, Hiromi Seo, Satoshi Seo, Tatsuyoshi Takahashi, Tomoka Nakagawa
  • Publication number: 20240215287
    Abstract: Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorp-tion spectrum of the phosphorescent compound.
    Type: Application
    Filed: December 4, 2023
    Publication date: June 27, 2024
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi Seo, Satoko Shitagaki, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Publication number: 20240164124
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Application
    Filed: September 25, 2023
    Publication date: May 16, 2024
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoko SHITAGAKI, Satoshi SEO, Nobuharu OHSAWA, Hideko INOUE, Masahiro TAKAHASHI, Kunihiko SUZUKI
  • Publication number: 20240147852
    Abstract: To provide a light-emitting element with an improved reliability, a light-emitting element with a high current efficiency (or a high quantum efficiency), and a novel dibenzo[f,h]quinoxaline derivative that is favorably used in a light-emitting element which is one embodiment of the present invention. A light-emitting element includes an EL layer between an anode and a cathode. The EL layer includes a light-emitting layer; the light-emitting layer contains a first organic compound having an electron-transport property and a hole-transport property, a second organic compound having a hole-transport property, and a light-emitting substance; the combination of the first organic compound and the second organic compound forms an exciplex; the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound; and a difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is less than or equal to 0.4 eV.
    Type: Application
    Filed: October 19, 2023
    Publication date: May 2, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Takao Hamada, Tatsuyoshi Takahashi, Yasushi Kitano, Hiroki Suzuki, Hideko Inoue
  • Patent number: 11871592
    Abstract: Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorption spectrum of the phosphorescent compound.
    Type: Grant
    Filed: April 5, 2021
    Date of Patent: January 9, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Satoko Shitagaki, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 11812626
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: November 7, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Masahiro Takahashi, Kunihiko Suzuki
  • Patent number: 11800799
    Abstract: To provide a light-emitting element with an improved reliability, a light-emitting element with a high current efficiency (or a high quantum efficiency), and a novel dibenzo[f,h]quinoxaline derivative that is favorably used in a light-emitting element which is one embodiment of the present invention. A light-emitting element includes an EL layer between an anode and a cathode. The EL layer includes a light-emitting layer; the light-emitting layer contains a first organic compound having an electron-transport property and a hole-transport property, a second organic compound having a hole-transport property, and a light-emitting substance; the combination of the first organic compound and the second organic compound forms an exciplex; the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound; and a difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is less than or equal to 0.4 eV.
    Type: Grant
    Filed: January 6, 2023
    Date of Patent: October 24, 2023
    Inventors: Satoshi Seo, Takao Hamada, Tatsuyoshi Takahashi, Yasushi Kitano, Hiroki Suzuki, Hideko Inoue
  • Publication number: 20230210005
    Abstract: A light-emitting element having high emission efficiency is provided. A light-emitting element having a low driving voltage is provided. A novel compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. A novel compound with a benzofuropyrimidine skeleton is provided. Also provided is a light-emitting element which includes the compound with the benzofuropyrimidine skeleton between a pair of electrodes.
    Type: Application
    Filed: March 2, 2023
    Publication date: June 29, 2023
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko Inoue, Miki Kanamoto, Hiromi Seo, Satoshi Seo, Tatsuyoshi Takahashi, Tomoka Nakagawa
  • Publication number: 20230105618
    Abstract: Provided is a light-emitting element with high emission efficiency. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than that of the second organic compound, and the HOMO level of the first organic compound is lower than that of the second organic compound. The LUMO level of a guest material is higher than that of the first organic compound, and the HOMO level of the guest material is lower than that of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.
    Type: Application
    Filed: July 28, 2022
    Publication date: April 6, 2023
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi SEO, Takeyoshi WATABE, Hideko INOUE, Yui YAMADA, Satomi MITSUMORI, Tatsuyoshi TAKAHASHI, Tomoka HARA
  • Publication number: 20230079236
    Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
    Type: Application
    Filed: November 15, 2022
    Publication date: March 16, 2023
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Satoshi SEO, Nobuharu OHSAWA, Satoko SHITAGAKI, Hideko INOUE, Hiroshi KADOMA, Harue OSAKA, Kunihiko SUZUKI, Yasuhiko TAKEMURA