Abstract: In A surface acoustic wave filter constituted with a ladder of resonators having a resonance frequency or an anti-resonance frequency, an input current flowing into a resonator in a parallel arm at the first stage from the input is so large as to deteriorate its lifetime caused from a heat generation by the resistance of the thin film wiring. As a measure to this problem, bonding wires (30, 31) connected onto points on connection electrodes (130, 131) for connecting an end of each of plural comb teeth electrodes 111 forming the resonators Rs1 & Rp1, or on a lead conductor (103-1) extended longitudinally from the connection electrode, are allotted at both sides of a center line (C1) of the plural comb teeth electrode group. Furthermore, a bonding wire may be connected substantially onto the center line C1 as well. It is preferable for the bonding wires to be located substantially symmetric with respect to the center line C1.

Abstract: A method of producing a SAW (Surface Acoustic Wave) device, including the steps of implanting ions in an entire surface of a piezoelectric member of the SAW device, so that an ion implantation layer is formed therein; performing a heat treatment of the piezoelectric member, so that a heat-treated ion implantation layer is formed in the entire surface of the piezoelectric member; and providing an electrode of a comb type resonator on the heat-treated ion implantation layer.

Abstract: In a surface acoustic wave filter constituted with a ladder of resonators having a resonance frequency or an anti-resonance frequency, an input current flowing into a resonator in a parallel arm at the first stage from the input is so large as to deteriorate its lifetime caused from a heat generation by the resistance of the thin film wiring. As a measure to this problem, bonding wires (30, 31) connected onto points on connection electrodes (130, 131) for connecting an end of each of plural comb teeth electrodes 111 forming the resonators R.sub.s1 & R.sub.p1, or on a lead conductor (130-1) extended longitudinally from the connection electrode, are allotted at both sides of a center line (C1) of the plural comb teeth electrode group. Furthermore, a bonding wire may be connected substantially onto the center line C1 as well. It is preferable for the bonding wires to be located substantially symmetric with respect to the center line C1.

Abstract: A surface acoustic wave device includes an electrode formed by a first film and a second film on a substrate, the first film including an Al film or a film formed by adding at least one other element to Al, and the second film including a metal whose coefficient of diffusion into Al is greater than a self diffusion coefficient of Al. The present invention contributes to improvement of the high-power durability of the electrodes.

Abstract: A SAW (Surface Acoustic Wave) device includes a piezoelectric member, a heat-treated ion implantation layer formed in a surface portion of the piezoelectric member, and an electrode of a comb type resonator with reflectors provided on said heat-treated ion implantation layer. The present invention also provides a method of producing such a SAW device.

Abstract: This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials is kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.

Abstract: This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials is kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.

Abstract: In order for the temperature dependence of the strip out field of a magnetic garnet crystal film (54) to match the temperature dependence of the residual magnetization of a permanent magnet (56) for applying a bias magnetic field in a magnetic bubble memory chip (2) after conductor paterns are formed thereon, it is necessary that the temperature coefficient of the collapse field of the magnetic garnet crystal film (51) be from 0.01 to 0.04%/.degree.C., in terms of an absolute value, greater than the temperature coefficient of the above-mentioned residual magnetization (56). The present invention achieves this by increasing the degree of substitution of Lu ions for Fe ions in the octahedral sites constituting the unit lattice of the magnetic garnet crystal. As a result, an operating temperature range about twice as wide as the conventional operating temperature range is ensured.

Abstract: This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials is kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.

Abstract: This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials in kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.