Patents by Inventor Hidemichi Fujiwara

Hidemichi Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220139864
    Abstract: A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.
    Type: Application
    Filed: January 13, 2022
    Publication date: May 5, 2022
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Hidemichi FUJIWARA, Yoshihiro SATO
  • Publication number: 20210348038
    Abstract: A joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. A joining film for joining a semiconductor element and a substrate includes an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element and the substrate are joined.
    Type: Application
    Filed: July 26, 2021
    Publication date: November 11, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Yoshihiro SATO, Hidemichi FUJIWARA
  • Publication number: 20210317343
    Abstract: The present disclosure relates to a metal particle-containing composition contains at least one thermosetting resin (R), a hardening agent (H), and at least three types of metal particles (P) different from one another. The metal particles (P) contain a solder alloy particle (P1) containing a tin alloy containing at least one metal (A), wherein the metal (A) is a metal that forms a eutectic crystal with tin at a eutectic temperature of 200° C. or lower, at least one metal particle (P2) containing a metal (B) having a melting point exceeding 420° C. in a bulk, the metal particle (P2) having a melting point higher than a solidus temperature of the solder alloy particle (P1), and at least one metal particle (P3) containing a metal (C) that forms an intermetallic compound with a metal contained in the solder alloy particle (P1).
    Type: Application
    Filed: June 25, 2021
    Publication date: October 14, 2021
    Applicant: Furukawa Electric Co., Ltd.
    Inventors: Norzafriza NITTA, Tomohiro ISHII, Hidemichi FUJIWARA
  • Publication number: 20210189197
    Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.
    Type: Application
    Filed: March 8, 2021
    Publication date: June 24, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Yoshihiro SATO, Hidemichi FUJIWARA
  • Publication number: 20210189198
    Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film for joining a semiconductor element and a substrate, the joining film having an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer are sintered, and thereby the semiconductor element and the substrate are joined.
    Type: Application
    Filed: March 8, 2021
    Publication date: June 24, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Yoshihiro SATO, Hidemichi FUJIWARA
  • Patent number: 10818405
    Abstract: A particle composition includes metal fine particles composed of a metal element having a bulk melting point of greater than 420° C. with a primary particle diameter of primary particles of the metal fine particles being 1 nm to 500 nm, a part of or an entire surface of the metal fine particles being coated with a coating material; a low melting point metal powder composed of a metal or alloy having a bulk melting point of 420° C. or less; and an activating agent that decomposes and removes the coating material from the surface of the metal fine particles after the low melting point metal powder is melted, wherein a content of the metal fine particles containing the coating material is 0.5 mass % to 50 mass %, and a ratio ([inorganic compound/metal fine particles]×100 (mass %)) of the inorganic compound in the metal fine particles is 0.1 mass % to 50 mass %.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: October 27, 2020
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Tomohiro Ishii, Hidemichi Fujiwara
  • Patent number: 10626483
    Abstract: A copper alloy wire rod has a chemical composition comprising Ag: 0.1 to 6.0 mass % and P: 0 to 20 mass ppm, the balance being copper with inevitable impurities. In a cross section parallel to a longitudinal direction of the wire rod, a number density of second phase particles each having an aspect ratio of greater than or equal to 1.5 and a size in a direction perpendicular to the longitudinal direction of the wire rod of less than or equal to 200 nm is greater than or equal to 1.4 particles/?m2.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: April 21, 2020
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Shigeki Sekiya, Hidemichi Fujiwara, Kengo Mitose
  • Publication number: 20190273062
    Abstract: The invention provides a joining film that can enhance the mechanical strength and thermal cycle characteristics in a semiconductor device produced by joining a semiconductor element and a substrate, and a tape for wafer processing. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a having a reinforcing layer formed from a porous body or a reticulate body, the pores or meshes of the porous body or the reticulate body being filled with an electroconductive paste containing metal fine particles (p).
    Type: Application
    Filed: May 21, 2019
    Publication date: September 5, 2019
    Applicant: Furukawa Electric Co., Ltd.
    Inventors: Hidemichi FUJIWARA, Norzafriza NITTA
  • Publication number: 20190264072
    Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Yoshihiro SATO, Hidemichi FUJIWARA
  • Publication number: 20190019594
    Abstract: A particle composition includes metal fine particles composed of a metal element having a bulk melting point of greater than 420° C. with a primary particle diameter of primary particles of the metal fine particles being 1 nm to 500 nm, a part of or an entire surface of the metal fine particles being coated with a coating material; a low melting point metal powder composed of a metal or alloy having a bulk melting point of 420° C. or less; and an activating agent that decomposes and removes the coating material from the surface of the metal fine particles after the low melting point metal powder is melted, wherein a content of the metal fine particles containing the coating material is 0.5 mass % to 50 mass %, and a ratio ([inorganic compound/metal fine particles]×100 (mass %)) of the inorganic compound in the metal fine particles is 0.1 mass % to 50 mass %.
    Type: Application
    Filed: July 8, 2016
    Publication date: January 17, 2019
    Applicant: Furukawa Electric Co., Ltd.
    Inventors: Tomohiro ISHII, Hidemichi FUJIWARA
  • Patent number: 10177079
    Abstract: A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter from 10 to 500 nm and an organic solvent (S), or a conductive paste containing the metal fine particles (P) and an organic dispersion medium (D) comprising the organic solvent (S) and an organic binder (R) is heating-treated so as for the metal fine particles (P) to be bonded, the porous body being formed by bonded metal fine particles (P) having mean primary particle diameter from 10 to 500 nm, a porosity thereof being from 5 to 35 volume %, and mean pore diameter being from 1 to 200 nm.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: January 8, 2019
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hideo Nishikubo, Shunji Masumori, Takuya Harada, Tomohiro Ishii, Hidemichi Fujiwara
  • Publication number: 20180371580
    Abstract: A copper alloy wire rod has a chemical composition comprising Ag: 0.1 to 6.0 mass % and P: 0 to 20 mass ppm, the balance being copper with inevitable impurities. In a cross section parallel to a longitudinal direction of the wire rod, a number density of second phase particles each having an aspect ratio of greater than or equal to 1.5 and a size in a direction perpendicular to the longitudinal direction of the wire rod of less than or equal to 200 nm is greater than or equal to 1.4 particles/?m2.
    Type: Application
    Filed: July 26, 2018
    Publication date: December 27, 2018
    Applicant: Furukawa Electric Co., Ltd.
    Inventors: Shigeki Sekiya, Hidemichi Fujiwara, Kengo Mitose
  • Patent number: 10046418
    Abstract: Providing the conductive paste for the material forming the conductive connecting member without disproportionately located holes (gaps), coarse voids, and cracks, which improves thermal cycle and is excellent in crack resistance and bonding strength.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: August 14, 2018
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Shunji Masumori, Toshiaki Asada, Hidemichi Fujiwara
  • Patent number: 9221130
    Abstract: A material is for thermal bonding by metal fine particle sintering mediated by a metal sintered film, such that shorts do not occur readily between bonded sections, and bonding strength is higher than that achieved by plating or sputtering. The material is obtained by dispersing metal fine particles in an organic compound dispersion medium that melts or softens through heating at a temperature higher than 30° C., and is interposed between metal members, semiconductor members or ceramic members. The material includes 60 wt % or more of the organic compound dispersion medium containing one or more types of a polyol having a melting point or softening point of 30° C. or higher and having two or more hydroxyl groups in the molecule, and 80 wt % or more of the metal fine particles that have an average particle size of primary particles ranging from 5 to 200 nm.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: December 29, 2015
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Toshiaki Asada, Hidemichi Fujiwara
  • Publication number: 20140127409
    Abstract: In a fine particle dispersion, a fine particle (P) is dispersed in a mixed organic solvent. The fine particle (P) is formed of one type or not less than two types of a metal, an alloy, and/or a metallic compound, and has a mean particle diameter between 1 nm and 150 nm for primary particles thereof. Further, the fine particle (P) has a surface at least a part thereof coated with a polymer dispersing agent (D).
    Type: Application
    Filed: November 6, 2012
    Publication date: May 8, 2014
    Inventors: Takuya HARADA, Hidemichi FUJIWARA, Kazuhiro TAKASHIBA, Nobumitsu YAMANAKA, Yusuke YAMADA, Hideo NISHIKUBO, Takashi UNNO
  • Publication number: 20130266796
    Abstract: A material is for thermal bonding by metal fine particle sintering mediated by a metal sintered film, such that shorts do not occur readily between bonded sections, and bonding strength is higher than that achieved by plating or sputtering. The material is obtained by dispersing metal fine particles in an organic compound dispersion medium that melts or softens through heating at a temperature higher than 30° C., and is interposed between metal members, semiconductor members or ceramic members. The material includes 60 wt % or more of the organic compound dispersion medium containing one or more types of a polyol having a melting point or softening point of 30° C. or higher and having two or more hydroxyl groups in the molecule, and 80 wt % or more of the metal fine particles that have an average particle size of primary particles ranging from 5 to 200 nm.
    Type: Application
    Filed: December 15, 2011
    Publication date: October 10, 2013
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Toshiaki Asada, Hidemichi Fujiwara
  • Patent number: 8475923
    Abstract: A heat transfer film includes a heat transfer layer formed of a first constituent material containing C (carbon) for transferring heat in an in-plane direction thereof and a layer thickness direction thereof; and a strain relaxation layer formed of a second constituent material and laminated on the heat transfer layer for relaxing a strain in the heat transfer layer. The first constituent material includes a graphite, and the second constituent material includes an amorphous material.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: July 2, 2013
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Masako Katayama, Hidemichi Fujiwara
  • Publication number: 20130001774
    Abstract: Providing the conductive paste for the material forming the conductive connecting member without disproportionately located holes (gaps), coarse voids, and cracks, which improves thermal cycle and is excellent in crack resistance and bonding strength.
    Type: Application
    Filed: March 18, 2011
    Publication date: January 3, 2013
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Shunji Masumori, Toshiaki Asada, Hidemichi Fujiwara
  • Publication number: 20130001775
    Abstract: A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter from 10 to 500 nm and an organic solvent (S), or a conductive paste containing the metal fine particles (P) and an organic dispersion medium (D) comprising the organic solvent (S) and an organic binder (R) is heating-treated so as for the metal fine particles (P) to be bonded, the porous body being formed by bonded metal fine particles (P) having mean primary particle diameter from 10 to 500 nm, a porosity thereof being from 5 to 35 volume %, and mean pore diameter being from 1 to 200 nm.
    Type: Application
    Filed: March 18, 2011
    Publication date: January 3, 2013
    Inventors: Hideo Nishikubo, Shunji Masumori, Takuya Harada, Tomohiro Ishii, Hidemichi Fujiwara
  • Patent number: 8337726
    Abstract: In a fine particle dispersion, a fine particle (P) is dispersed in a mixed organic solvent. The fine particle (P) is formed of one type or not less than two types of a metal, an alloy, and/or a metallic compound, and has a mean particle diameter between 1 nm and 150 nm for primary particles thereof. Further, the fine particle (P) has a surface at least a part thereof coated with a polymer dispersing agent (D).
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: December 25, 2012
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Takuya Harada, Hidemichi Fujiwara, Kazuhiro Takashiba, Nobumitsu Yamanaka, Yusuke Yamada, Hideo Nishikubo, Takashi Unno