Abstract: The present disclosure relates to a metal particle-containing composition contains at least one thermosetting resin (R), a hardening agent (H), and at least three types of metal particles (P) different from one another. The metal particles (P) contain a solder alloy particle (P1) containing a tin alloy containing at least one metal (A), wherein the metal (A) is a metal that forms a eutectic crystal with tin at a eutectic temperature of 200° C. or lower, at least one metal particle (P2) containing a metal (B) having a melting point exceeding 420° C. in a bulk, the metal particle (P2) having a melting point higher than a solidus temperature of the solder alloy particle (P1), and at least one metal particle (P3) containing a metal (C) that forms an intermetallic compound with a metal contained in the solder alloy particle (P1).

Abstract: A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

Abstract: A joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. A joining film for joining a semiconductor element and a substrate includes an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element and the substrate are joined.

Abstract: The present disclosure relates to a metal particle-containing composition contains at least one thermosetting resin (R), a hardening agent (H), and at least three types of metal particles (P) different from one another. The metal particles (P) contain a solder alloy particle (P1) containing a tin alloy containing at least one metal (A), wherein the metal (A) is a metal that forms a eutectic crystal with tin at a eutectic temperature of 200° C. or lower, at least one metal particle (P2) containing a metal (B) having a melting point exceeding 420° C. in a bulk, the metal particle (P2) having a melting point higher than a solidus temperature of the solder alloy particle (P1), and at least one metal particle (P3) containing a metal (C) that forms an intermetallic compound with a metal contained in the solder alloy particle (P1).

Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film for joining a semiconductor element and a substrate, the joining film having an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer are sintered, and thereby the semiconductor element and the substrate are joined.

Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.

Abstract: A particle composition includes metal fine particles composed of a metal element having a bulk melting point of greater than 420° C. with a primary particle diameter of primary particles of the metal fine particles being 1 nm to 500 nm, a part of or an entire surface of the metal fine particles being coated with a coating material; a low melting point metal powder composed of a metal or alloy having a bulk melting point of 420° C. or less; and an activating agent that decomposes and removes the coating material from the surface of the metal fine particles after the low melting point metal powder is melted, wherein a content of the metal fine particles containing the coating material is 0.5 mass % to 50 mass %, and a ratio ([inorganic compound/metal fine particles]×100 (mass %)) of the inorganic compound in the metal fine particles is 0.1 mass % to 50 mass %.

Abstract: A copper alloy wire rod has a chemical composition comprising Ag: 0.1 to 6.0 mass % and P: 0 to 20 mass ppm, the balance being copper with inevitable impurities. In a cross section parallel to a longitudinal direction of the wire rod, a number density of second phase particles each having an aspect ratio of greater than or equal to 1.5 and a size in a direction perpendicular to the longitudinal direction of the wire rod of less than or equal to 200 nm is greater than or equal to 1.4 particles/?m2.

Abstract: The invention provides a joining film that can enhance the mechanical strength and thermal cycle characteristics in a semiconductor device produced by joining a semiconductor element and a substrate, and a tape for wafer processing. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a having a reinforcing layer formed from a porous body or a reticulate body, the pores or meshes of the porous body or the reticulate body being filled with an electroconductive paste containing metal fine particles (p).

Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.

Abstract: A particle composition includes metal fine particles composed of a metal element having a bulk melting point of greater than 420° C. with a primary particle diameter of primary particles of the metal fine particles being 1 nm to 500 nm, a part of or an entire surface of the metal fine particles being coated with a coating material; a low melting point metal powder composed of a metal or alloy having a bulk melting point of 420° C. or less; and an activating agent that decomposes and removes the coating material from the surface of the metal fine particles after the low melting point metal powder is melted, wherein a content of the metal fine particles containing the coating material is 0.5 mass % to 50 mass %, and a ratio ([inorganic compound/metal fine particles]×100 (mass %)) of the inorganic compound in the metal fine particles is 0.1 mass % to 50 mass %.

Abstract: A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter from 10 to 500 nm and an organic solvent (S), or a conductive paste containing the metal fine particles (P) and an organic dispersion medium (D) comprising the organic solvent (S) and an organic binder (R) is heating-treated so as for the metal fine particles (P) to be bonded, the porous body being formed by bonded metal fine particles (P) having mean primary particle diameter from 10 to 500 nm, a porosity thereof being from 5 to 35 volume %, and mean pore diameter being from 1 to 200 nm.

Abstract: A copper alloy wire rod has a chemical composition comprising Ag: 0.1 to 6.0 mass % and P: 0 to 20 mass ppm, the balance being copper with inevitable impurities. In a cross section parallel to a longitudinal direction of the wire rod, a number density of second phase particles each having an aspect ratio of greater than or equal to 1.5 and a size in a direction perpendicular to the longitudinal direction of the wire rod of less than or equal to 200 nm is greater than or equal to 1.4 particles/?m2.

Abstract: Providing the conductive paste for the material forming the conductive connecting member without disproportionately located holes (gaps), coarse voids, and cracks, which improves thermal cycle and is excellent in crack resistance and bonding strength.

Abstract: A material is for thermal bonding by metal fine particle sintering mediated by a metal sintered film, such that shorts do not occur readily between bonded sections, and bonding strength is higher than that achieved by plating or sputtering. The material is obtained by dispersing metal fine particles in an organic compound dispersion medium that melts or softens through heating at a temperature higher than 30° C., and is interposed between metal members, semiconductor members or ceramic members. The material includes 60 wt % or more of the organic compound dispersion medium containing one or more types of a polyol having a melting point or softening point of 30° C. or higher and having two or more hydroxyl groups in the molecule, and 80 wt % or more of the metal fine particles that have an average particle size of primary particles ranging from 5 to 200 nm.

Abstract: In a fine particle dispersion, a fine particle (P) is dispersed in a mixed organic solvent. The fine particle (P) is formed of one type or not less than two types of a metal, an alloy, and/or a metallic compound, and has a mean particle diameter between 1 nm and 150 nm for primary particles thereof. Further, the fine particle (P) has a surface at least a part thereof coated with a polymer dispersing agent (D).

Abstract: A material is for thermal bonding by metal fine particle sintering mediated by a metal sintered film, such that shorts do not occur readily between bonded sections, and bonding strength is higher than that achieved by plating or sputtering. The material is obtained by dispersing metal fine particles in an organic compound dispersion medium that melts or softens through heating at a temperature higher than 30° C., and is interposed between metal members, semiconductor members or ceramic members. The material includes 60 wt % or more of the organic compound dispersion medium containing one or more types of a polyol having a melting point or softening point of 30° C. or higher and having two or more hydroxyl groups in the molecule, and 80 wt % or more of the metal fine particles that have an average particle size of primary particles ranging from 5 to 200 nm.

Abstract: A heat transfer film includes a heat transfer layer formed of a first constituent material containing C (carbon) for transferring heat in an in-plane direction thereof and a layer thickness direction thereof; and a strain relaxation layer formed of a second constituent material and laminated on the heat transfer layer for relaxing a strain in the heat transfer layer. The first constituent material includes a graphite, and the second constituent material includes an amorphous material.

Abstract: A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter from 10 to 500 nm and an organic solvent (S), or a conductive paste containing the metal fine particles (P) and an organic dispersion medium (D) comprising the organic solvent (S) and an organic binder (R) is heating-treated so as for the metal fine particles (P) to be bonded, the porous body being formed by bonded metal fine particles (P) having mean primary particle diameter from 10 to 500 nm, a porosity thereof being from 5 to 35 volume %, and mean pore diameter being from 1 to 200 nm.

Abstract: Providing the conductive paste for the material forming the conductive connecting member without disproportionately located holes (gaps), coarse voids, and cracks, which improves thermal cycle and is excellent in crack resistance and bonding strength.