Abstract: A microfluidic chip includes an input section from which a liquid is introduced, a channel section in which the liquid flows, and an output section from which the liquid is discharged or a drug fixation section where the liquid and a drug come into contact. The channel section has a hydrophobic region in which a contact angle of a surface in contact with the liquid is 90 degrees or more and 130 degrees or less. The channel section is formed by being surrounded by at least a floor layer, a barrier layer, and an upper covering layer above a substrate, and a surface of at least one of the floor layer, the barrier layer, and the upper covering layer has the hydrophobic region.

Abstract: A microfluidic chip includes a substrate, a partition layer including a resin material and provided on the substrate to form a channel, and a cover layer provided on the surface of the partition layer facing away from the substrate, where the partition layer has an elastic modulus in the range of 1 MPa or more and 10 GPa or less.

Abstract: A display is provided with a periodic structure that is dielectric and includes a support and a plurality of periodic elements. A plurality of periodic elements is arranged on a reference plane in a two-dimensional lattice form having a sub-wavelength period and are either convexities projected or concavities recessed in the reference plane. A metal layer is disposed on a surface of the periodic structure. The surface corresponds to a plane including a region of the reference plane surrounding the individual periodic elements and surfaces of the periodic elements. The metal layer's profile conforms to a surface profile of the periodic structure. The plurality of periodic elements have an interval therebetween in a first direction in which the plurality of periodic elements are arranged in a two-dimensional lattice form. The interval is different from an interval between the periodic elements in a second direction intersecting the first direction.

Abstract: An optical device comprises a support having a reference plane, and a dielectric periodic structure including a plurality of periodic elements which are arranged, on the reference plane, in a two-dimensional lattice having a sub-wavelength spacing and are either projections projecting from the reference plane or recesses depressed from the reference plane. The optical device further includes a metal layer, which is positioned on a surface of the periodic structure including a region of the reference plane surrounding the individual periodic elements and the surfaces of the periodic elements and which has a shape that follows the surface profile of the periodic structure.

Abstract: An optical device comprises a support having a reference plane, and a dielectric periodic structure including a plurality of periodic elements which are arranged, on the reference plane, in a two-dimensional lattice having a sub-wavelength spacing and are either projections projecting from the reference plane or recesses depressed from the reference plane. The optical device further includes a metal layer, which is positioned on a surface of the periodic structure including a region of the reference plane surrounding the individual periodic elements and the surfaces of the periodic elements and which has a shape that follows the surface profile of the periodic structure.

Abstract: A display is provided with a periodic structure that is dielectric and includes a support and a plurality of periodic elements. A plurality of periodic elements is arranged on a reference plane in a two-dimensional lattice form having a sub-wavelength period and are either convexities projected or concavities recessed in the reference plane. A metal layer is disposed on a surface of the periodic structure. The surface corresponds to a plane including a region of the reference plane surrounding the individual periodic elements and surfaces of the periodic elements. The metal layer's profile conforms to a surface profile of the periodic structure. The plurality of periodic elements have an interval therebetween in a first direction in which the plurality of periodic elements are arranged in a two-dimensional lattice form. The interval is different from an interval between the periodic elements in a second direction intersecting the first direction.

Abstract: An optical device comprises a support having a reference plane, and a dielectric periodic structure including a plurality of periodic elements which are arranged, on the reference plane, in a two-dimensional lattice having a sub-wavelength spacing and are either projections projecting from the reference plane or recesses depressed from the reference plane. The optical device further includes a metal layer, which is positioned on a surface of the periodic structure including a region of the reference plane surrounding the individual periodic elements and the surfaces of the periodic elements and which has a shape that follows the surface profile of the periodic structure.

Abstract: A microstructure inspection method which inspects an angle of a sidewall of a sample microstructure pattern, the method including: taking SEM photographs of the sample microstructure pattern under plural SEM conditions; measuring a width of a white band at an edge portion of the sample microstructure pattern in the SEM photographs; and calculating the angle of the sidewall of the sample microstructure pattern on the basis of an amount of change in the width of the white band due to the change between the plural SEM conditions.

Abstract: An electron beam is irradiated on an observation region of a sample surface. An image (SEM image) is acquired based on a detection signal of secondary electrons from a detector disposed obliquely above the observation region. A length of a shadow of a pattern appearing in the image is detected. Then, a height H of the pattern is calculated by a formula H=L×tan ? on the basis of the detected length L of the shadow and an apparent angle ? of the detector to the sample surface obtained in advance. An intensity distribution of the secondary electrons on a line orthogonal to an edge of the pattern is extracted, and the length L of the shadow of the pattern is obtained as a distance between two points where a recess portion of the intensity distribution intersects a predetermined threshold.

Abstract: A pattern measurement apparatus scans an observation region of a sample surface with an electron beam and detects secondary electrons emitted from the sample surface with the irradiation of the electron beam, by using a plurality of electron detectors arranged around the optical axis of the electron beam. Images are taken in two directions that are orthogonal to a pattern extending direction, and are opposite to each other across the optical axis. Then, profiles of a line orthogonal to each of edges are extracted from the images, and a subtraction between the line profiles is taken to obtain a subtractive profile. The position of an upper end of each edge is detected based on a descending portion of the subtractive profile, and the position of a lower end of the edge is detected based on a rising portion or a descending portion of one of the line profiles.

Abstract: An electron beam is irradiated on an observation region of a sample surface. An image (SEM image) is acquired based on a detection signal of secondary electrons from a detector disposed obliquely above the observation region. A length of a shadow of a pattern appearing in the image is detected. Then, a height H of the pattern is calculated by a formula H=L× tan ? on the basis of the detected length L of the shadow and an apparent angle ? of the detector to the sample surface obtained in advance. An intensity distribution of the secondary electrons on a line orthogonal to an edge of the pattern is extracted, and the length L of the shadow of the pattern is obtained as a distance between two points where a recess portion of the intensity distribution intersects a predetermined threshold.

Abstract: A microstructure inspection method which inspects an angle of a sidewall of a sample microstructure pattern, the method including: taking SEM photographs of the sample microstructure pattern under plural SEM conditions; measuring a width of a white band at an edge portion of the sample microstructure pattern in the SEM photographs; and calculating the angle of the sidewall of the sample microstructure pattern on the basis of an amount of change in the width of the white band due to the change between the plural SEM conditions.